IXFH67N10Q Equivalent & Substitute Parts

Part Overview

The IXFH67N10Q is an N-Channel MOSFET manufactured by IXYS, rated for 100V drain-to-source voltage with 67A continuous drain current at 25°C. This device is housed in a TO-247AD package and is designed for high-power switching applications requiring through-hole mounting. The part is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement.

Substiute Parts

IXFH67N10Q

IXYSIn Stock: 1103IXFH67N10Q Datasheet

Current PartRFQ

HUF75639G3

onsemiIn Stock: 1830HUF75639G3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFH67N10Q is determined by the following critical electrical and mechanical parameters:

Voltage Rating: The substitute must maintain the 100V Vdss specification to ensure safe operation within the same voltage class.

Current Rating: The substitute must support continuous drain current at or above the application requirement. The IXFH67N10Q operates at 67A; substitutes with lower current ratings require circuit re-evaluation.

On-State Resistance: Rds On directly affects power dissipation and thermal performance. Substitutes with equivalent or lower Rds On values maintain thermal characteristics.

Package and Mounting: Both the main part and substitute must use through-hole TO-247 packaging to ensure mechanical and thermal interface compatibility.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitutes with lower values reduce switching losses and simplify driver design.

Operating Temperature Range: The substitute must support the application's thermal environment.

Product Status and Compliance: Active parts with current certifications (RoHS, REACH) are preferred over obsolete parts for long-term supply chain stability.

Parameter Comparison

Engineering Selection Recommendations

HUF75639G3 as a Substitute for IXFH67N10Q:

The HUF75639G3 is an active, production-supported N-Channel MOSFET that shares the same 100V voltage rating and TO-247 through-hole package family with the IXFH67N10Q. Both devices maintain equivalent on-state resistance specifications at 25 mOhm, ensuring comparable conduction losses in switching applications.

The HUF75639G3 operates at 56A continuous drain current, which is 11A lower than the IXFH67N10Q's 67A rating. This difference requires circuit-level evaluation to confirm the substitute is suitable for the intended application current. Applications operating below 56A continuous current will experience no functional limitation.

The HUF75639G3 exhibits lower gate charge (130 nC versus 260 nC) and input capacitance (2000 pF versus 4500 pF), resulting in reduced switching losses and simplified gate drive requirements compared to the main part.

The substitute device is ROHS3 compliant and REACH unaffected, providing superior long-term supply chain availability and regulatory compliance compared to the obsolete IXFH67N10Q.

The HUF75639G3 supports an extended operating temperature range to 175°C, exceeding the IXFH67N10Q's 150°C maximum, offering improved thermal margin in high-temperature environments.

Maximum power dissipation of the HUF75639G3 is rated at 200W, compared to 300W for the main part. Thermal design verification is required for applications approaching the original part's power dissipation specification.

Frequently Asked Questions (FAQ)

Q: Can the HUF75639G3 directly replace the IXFH67N10Q in existing designs?

A: Direct mechanical and electrical substitution is possible for applications operating at or below 56A continuous drain current. The TO-247 package family ensures compatible pinout and mounting. Gate drive circuits may benefit from the lower gate charge specification of the substitute, but existing drivers will function correctly. Thermal design review is necessary if the original design approaches 300W power dissipation, as the substitute is rated for 200W maximum.

Q: What is the difference between TO-247AD and TO-247-3 packages?

A: Both packages are through-hole TO-247 variants with identical pin configurations and mechanical mounting interfaces. The primary difference is in manufacturing process and thermal interface specifications. The packages are mechanically interchangeable for PCB mounting and heatsink attachment purposes.

Q: How does the lower gate charge of the HUF75639G3 affect circuit design?

A: Lower gate charge (130 nC versus 260 nC) reduces the charge that must be supplied by the gate driver to switch the device. This results in faster switching transitions, reduced switching losses, and lower gate driver power consumption. Existing gate drive circuits designed for the IXFH67N10Q will operate with improved performance margins when driving the HUF75639G3.

Q: Is the HUF75639G3 suitable for applications requiring 67A continuous current?

A: The HUF75639G3 is rated for 56A continuous drain current at 25°C. Applications requiring 67A continuous current must either use the original IXFH67N10Q (if available) or select an alternative device with higher current rating. Operating the HUF75639G3 above its rated current will result in excessive junction temperature and reduced device lifetime.

Q: What are the compliance advantages of the HUF75639G3?

A: The HUF75639G3 is ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. The IXFH67N10Q, being obsolete, may not meet current compliance standards for new designs or procurement in regulated industries. The active production status of the HUF75639G3 ensures long-term availability and consistent quality.

Q: How do the input capacitance values affect switching performance?

A: Input capacitance (Ciss) determines the charge storage at the gate-source and gate-drain interfaces. The HUF75639G3's lower input capacitance (2000 pF versus 4500 pF) results in faster voltage transitions at the gate node, enabling higher switching frequencies and reduced switching losses. This is particularly beneficial in high-frequency switching applications.