IXFH67N10 Equivalent & Substitute Parts

Part Overview

The IXFH67N10 is an N-Channel MOSFET rated for 100V drain-to-source voltage with 67A continuous drain current at 25°C. This device is manufactured by IXYS in the HiPerFET™ series and is packaged in TO-247AD through-hole configuration. The part is designated as Last Time Buy, indicating end-of-life status. Equivalent and substitute parts are necessary to ensure design continuity and maintain supply chain availability for applications requiring N-Channel 100V MOSFET functionality.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	100	V
Current - Continuous Drain (Id) @ 25°C	67	A (Tc)
Rds On (Max) @ Id, Vgs	25	mOhm @ 33.5A, 10V
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247AD	Through Hole
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IXFH67N10 is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 100V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Gate voltage rating (Vgs Max): ±20V

Performance Compatibility Criteria:

Continuous drain current (Id) at 25°C: equal to or greater than 67A
On-state resistance (Rds On): equal to or lower than 25 mOhm
Power dissipation capability: equal to or greater than 300W
Operating temperature range: must encompass -55°C to 150°C minimum

Package Compatibility:

TO-247 family packages (TO-247AD, TO-247AC, TO-247-3) are mechanically and electrically compatible for through-hole mounting applications

The substitute parts listed below meet or exceed these criteria while maintaining functional equivalence for the IXFH67N10 in standard applications.

Parameter Comparison

Parameter	IXFH67N10	IXFH110N10P	HUF75639G3	IRFP3710PBF
Manufacturer	IXYS	IXYS	onsemi	Infineon Technologies
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Vdss	100V	100V	100V	100V
Id @ 25°C	67A	110A	56A	57A
Rds On (Max)	25 mOhm	15 mOhm	25 mOhm	25 mOhm
Power Dissipation (Max)	300W	480W	200W	200W
Operating Temperature Range	-55 to 150°C	-55 to 175°C	-55 to 175°C	-55 to 175°C
Package	TO-247AD	TO-247AD	TO-247-3	TO-247AC
Vgs (Max)	±20V	±20V	±20V	±20V
Gate Charge (Qg) @ 10V	260 nC	110 nC	130 nC	190 nC
Input Capacitance (Ciss) @ 25V	4500 pF	3550 pF	2000 pF	3000 pF
Product Status	Last Time Buy	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFH110N10P (MFR Recommended Substitute)

The IXFH110N10P is the manufacturer-recommended equivalent for the IXFH67N10. This part exceeds the performance specifications of the original device with 110A continuous drain current and 480W power dissipation capability. The IXFH110N10P features lower on-state resistance (15 mOhm) and reduced gate charge (110 nC), resulting in improved efficiency and faster switching characteristics. The device is ROHS3 compliant and carries Active product status, ensuring long-term availability. Operating temperature range extends to 175°C, providing enhanced thermal margin. The TO-247AD package maintains mechanical and electrical compatibility with the original design.

HUF75639G3 (Similar Substitute)

The HUF75639G3 from onsemi provides functional equivalence with matching 100V Vdss and 25 mOhm Rds On specifications. Continuous drain current is rated at 56A, which is slightly below the original 67A specification. Power dissipation is limited to 200W, representing a reduction from the original 300W rating. This device is suitable for applications where current and power requirements do not exceed these limits. The HUF75639G3 is ROHS3 compliant with Active product status. Operating temperature range extends to 175°C. The TO-247-3 package is mechanically compatible with TO-247AD through standard through-hole mounting.

IRFP3710PBF (Similar Substitute)

The IRFP3710PBF from Infineon Technologies is a HEXFET® series device meeting the 100V Vdss and 25 mOhm Rds On requirements. Continuous drain current is rated at 57A, below the original 67A specification. Power dissipation capability is 200W, lower than the original 300W rating. This device is ROHS3 compliant with Active product status and extended operating temperature range to 175°C. The TO-247AC package is mechanically compatible with TO-247AD for through-hole applications. Gate charge of 190 nC and input capacitance of 3000 pF fall within acceptable switching performance parameters.

Compliance Considerations

The IXFH67N10 is RoHS non-compliant. All three substitute parts are ROHS3 compliant, meeting current regulatory requirements for new designs and procurement. All substitute parts maintain REACH Unaffected status and EAR99 export classification consistent with the original device.

Frequently Asked Questions (FAQ)

Q: Can the IXFH110N10P directly replace the IXFH67N10 in existing designs?

A: Yes. The IXFH110N10P is the manufacturer-recommended substitute and maintains full electrical and mechanical compatibility. The TO-247AD package is identical, and all electrical parameters meet or exceed the original specifications. No circuit modifications are required.

Q: What is the difference between TO-247AD, TO-247AC, and TO-247-3 packages?

A: All three are TO-247 family through-hole packages with identical pin spacing and mounting footprints. TO-247AD and TO-247AC differ in internal lead frame design but are mechanically interchangeable. TO-247-3 is the generic designation for the three-pin TO-247 package. All are suitable for direct substitution in through-hole applications.

Q: Why do the HUF75639G3 and IRFP3710PBF have lower current and power ratings than the IXFH67N10?

A: These devices are designed for different application segments within the 100V N-Channel MOSFET category. The HUF75639G3 (56A) and IRFP3710PBF (57A) are suitable for applications requiring continuous drain current at or below these levels. The IXFH110N10P is the appropriate choice for applications requiring the full 67A or higher current capability.

Q: Are there thermal performance differences between the substitute parts?

A: Yes. The IXFH110N10P provides 480W power dissipation versus the original 300W, offering superior thermal headroom. The HUF75639G3 and IRFP3710PBF are rated at 200W, requiring careful thermal management in high-power applications. All substitute parts extend the maximum junction temperature to 175°C compared to the original 150°C, improving thermal margin.

Q: What is the significance of the Last Time Buy status for the IXFH67N10?

A: Last Time Buy designation indicates the manufacturer will discontinue production. Existing inventory will be depleted without replenishment. Designs using the IXFH67N10 must transition to an active substitute part. The IXFH110N10P is the recommended transition path due to manufacturer equivalence and superior performance characteristics.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The IXFH110N10P has significantly lower gate charge (110 nC) compared to the original (260 nC), reducing driver power requirements and enabling faster switching. The HUF75639G3 (130 nC) and IRFP3710PBF (190 nC) offer intermediate values. Lower gate charge improves efficiency in high-frequency switching applications.

Q: Are all substitute parts suitable for high-temperature applications?

A: All substitute parts support operating temperatures to 175°C, exceeding the original 150°C maximum. This provides additional thermal margin for applications operating near maximum junction temperature. Thermal design should account for the specific power dissipation rating of the selected substitute part.

Q: What compliance certifications should be verified for new designs?

A: All substitute parts are ROHS3 compliant, REACH Unaffected, and classified as EAR99 for export purposes. These certifications match the original device classification. Designs transitioning from the non-compliant IXFH67N10 to any substitute part achieve RoHS compliance.

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