IXFH66N20Q N-Channel 200V 66A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH66N20Q is an N-Channel MOSFET manufactured by IXYS, rated for 200V drain-to-source voltage and 66A continuous drain current at 25°C. This device is part of the HiPerFET™ series and is housed in a TO-247AD through-hole package. The IXFH66N20Q is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing design support, production continuity, and system maintenance.

Substiute Parts

IXFH66N20Q
IXYSIn Stock: 5766IXFH66N20Q Datasheet
IXFH66N20Q
Current Part
APT20M45BVRG
Microchip TechnologyIn Stock: 3506APT20M45BVRG Datasheet
APT20M45BVRG
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IRFP260MPBF
Infineon TechnologiesIn Stock: 40389IRFP260MPBF Datasheet
IRFP260MPBF
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IRFP260NPBF
Infineon TechnologiesIn Stock: 65404IRFP260NPBF Datasheet
IRFP260NPBF
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STW75NF20
STMicroelectronicsIn Stock: 1453STW75NF20 Datasheet
STW75NF20
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 66 A
On-State Resistance (Rds On Max) @ 10V 40 mOhm
Gate Threshold Voltage (Vgs(th) Max) 4 V
Gate Charge (Qg Max) @ 10V 105 nC
Power Dissipation (Max) 400 W
Operating Temperature Range −55 to 150 °C
Mounting Type Through Hole
Package TO-247-3

Substitute Part Grouping Explanation

Substitution of the IXFH66N20Q is determined by the following critical electrical and mechanical parameters:

Mandatory Matching Criteria:

  • Drain to Source Voltage (Vdss): 200V
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Mounting Type: Through Hole
  • Package Family: TO-247-3 (includes TO-247AD, TO-247AC, and TO-247 [B] variants)

Performance Compatibility Criteria:

  • Continuous Drain Current (Id): Substitute must meet or exceed 66A at 25°C
  • On-State Resistance (Rds On): Substitute must not exceed 40 mOhm at 10V drive voltage
  • Gate Threshold Voltage (Vgs(th)): Must be 4V or less
  • Operating Temperature Range: Must support −55°C to 150°C minimum

The four substitute parts listed below satisfy all mandatory criteria and maintain electrical performance within acceptable operating parameters for direct replacement in applications designed for the IXFH66N20Q.

Parameter Comparison

Parameter IXFH66N20Q APT20M45BVRG IRFP260MPBF IRFP260NPBF STW75NF20
Manufacturer IXYS Microchip Technology Infineon Technologies Infineon Technologies STMicroelectronics
Vdss (V) 200 200 200 200 200
Id @ 25°C (A) 66 56 50 50 75
Rds On Max @ 10V (mOhm) 40 45 40 40 34
Vgs(th) Max (V) 4 4 4 4 4
Gate Charge Qg @ 10V (nC) 105 195 234 234 84
Power Dissipation Max (W) 400 300 300 300 190
Operating Temperature (°C) −55 to 150 −55 to 150 −55 to 175 −55 to 175 −50 to 150
Package TO-247AD TO-247 [B] TO-247AC TO-247AC TO-247-3
Product Status Obsolete Active Active Active Active

Engineering Selection Recommendations

APT20M45BVRG (Microchip Technology)

The APT20M45BVRG is an active product from Microchip Technology rated for 56A continuous drain current. This device meets all mandatory electrical and mechanical substitution criteria. The 56A rating is lower than the IXFH66N20Q's 66A specification; however, the on-state resistance of 45 mOhm remains within acceptable limits. This substitute is suitable for applications where the 56A current rating provides adequate margin above the actual circuit load. RoHS3 compliance and REACH unaffected status confirm regulatory alignment.

IRFP260MPBF and IRFP260NPBF (Infineon Technologies)

Both IRFP260MPBF and IRFP260NPBF are identical active products from Infineon Technologies, rated for 50A continuous drain current. These devices meet all mandatory substitution criteria with on-state resistance of 40 mOhm matching the IXFH66N20Q specification. The 50A rating is lower than the original part; however, these substitutes are suitable for applications where the 50A current rating provides adequate operational margin. Both devices support an extended operating temperature range of −55°C to 175°C, exceeding the original specification. RoHS3 compliance and REACH unaffected status confirm regulatory alignment. High inventory availability (40,300 and 65,300 units respectively) ensures supply continuity.

STW75NF20 (STMicroelectronics)

The STW75NF20 is an active product from STMicroelectronics rated for 75A continuous drain current, exceeding the IXFH66N20Q's 66A specification. This device meets all mandatory electrical and mechanical substitution criteria with superior on-state resistance of 34 mOhm and lower gate charge of 84 nC. The STW75NF20 provides enhanced performance headroom for high-current applications. Operating temperature range is −50°C to 150°C, meeting the original specification minimum. RoHS3 compliance and REACH unaffected status confirm regulatory alignment.

All four substitute parts are classified as active products with current manufacturing support, ensuring long-term availability and supply chain stability compared to the obsolete IXFH66N20Q.

Frequently Asked Questions (FAQ)

Q: Can the APT20M45BVRG replace the IXFH66N20Q in all applications?

A: The APT20M45BVRG meets all mandatory electrical and mechanical substitution criteria. However, its 56A continuous drain current rating is lower than the IXFH66N20Q's 66A specification. Substitution is valid only when the actual circuit load current does not exceed 56A at 25°C. Verify circuit current requirements before selection.

Q: What is the difference between IRFP260MPBF and IRFP260NPBF?

A: Both devices are electrically and mechanically identical. They share the same electrical specifications, package, and performance characteristics. The difference lies in packaging designation and supplier lot tracking. Either part is suitable for direct substitution of the IXFH66N20Q.

Q: Why does the STW75NF20 have lower power dissipation (190W) than the IXFH66N20Q (400W) despite higher current rating?

A: Power dissipation is determined by on-state resistance and thermal design. The STW75NF20 features superior on-state resistance (34 mOhm versus 40 mOhm), resulting in lower I²R losses. The lower power dissipation specification reflects the device's thermal design characteristics rather than a limitation in current-handling capability.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. APT20M45BVRG, IRFP260MPBF, IRFP260NPBF, and STW75NF20 are all RoHS3 compliant. The obsolete IXFH66N20Q does not carry RoHS certification. Substitution with any of these active parts ensures regulatory compliance for new designs and production runs.

Q: Can I use these substitutes in applications requiring the full 66A rating?

A: The APT20M45BVRG and IRFP260 series (both rated 50A and 56A respectively) are not suitable for applications requiring the full 66A continuous current. The STW75NF20, rated for 75A, exceeds the original specification and is suitable for such applications.

Q: What is the impact of different TO-247 package variants (AD, AC, [B])?

A: All substitute parts use TO-247-3 package family variants (TO-247AD, TO-247AC, TO-247 [B]). These variants are mechanically and electrically compatible for through-hole mounting applications. Pin configuration and lead spacing are standardized across all variants, ensuring direct PCB compatibility without layout modification.

Q: Which substitute offers the best thermal performance?

A: The STW75NF20 provides the lowest on-state resistance (34 mOhm) and lowest gate charge (84 nC), resulting in superior thermal efficiency and reduced switching losses. This device is the optimal choice for applications prioritizing thermal performance and efficiency.

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