IXFH60N20 Equivalent & Substitute Parts

Part Overview

The IXFH60N20 is an N-Channel MOSFET rated for 200V drain-to-source voltage with 60A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in a TO-247AD package and is part of the HiPerFET™ series. The component is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating package variations within the TO-247 family.

Key Parameters

Parameter	IXFH60N20
Drain to Source Voltage (Vdss)	200 V
Continuous Drain Current (Id) @ 25°C	60 A
Rds On (Max) @ Id, Vgs	33 mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 10V
Power Dissipation (Max)	300 W
Operating Temperature Range	-55°C to 150°C
Package Type	TO-247AD
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH60N20 is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 200 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package Family: TO-247 (includes TO-247AD, TO-247AC, TO-247-3 variants)

Performance Compatibility Criteria:

Continuous Drain Current (Id) @ 25°C: Equal to or greater than 60 A
Rds On (Max): Equal to or lower than 33 mOhm (at comparable test conditions)
Power Dissipation (Max): Equal to or greater than 300 W
Operating Temperature Range: Must encompass or exceed -55°C to 150°C

Regulatory & Compliance Criteria:

RoHS3 Compliance
REACH Unaffected status
Moisture Sensitivity Level (MSL): 1 (Unlimited)

The identified substitute parts meet these criteria while offering active product status and improved or equivalent electrical performance.

Parameter Comparison

Parameter	IXFH60N20	IRFP4227PBF	STW75NF20
Manufacturer	IXYS	Infineon Technologies	STMicroelectronics
Drain to Source Voltage (Vdss)	200 V	200 V	200 V
Continuous Drain Current (Id) @ 25°C	60 A	65 A	75 A
Rds On (Max) @ Id, Vgs	33 mOhm @ 30A, 10V	25 mOhm @ 46A, 10V	34 mOhm @ 37A, 10V
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 10V	98 nC @ 10V	84 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	5200 pF @ 25V	4600 pF @ 25V	3260 pF @ 25V
Power Dissipation (Max)	300 W	330 W	190 W
Operating Temperature Range	-55°C to 150°C	-40°C to 175°C	-50°C to 150°C
Package Type	TO-247AD	TO-247AC	TO-247-3
Product Status	Obsolete	Active	Active
RoHS3 Compliance	Yes	Yes	Yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

IRFP4227PBF (Infineon Technologies)

The IRFP4227PBF is an active substitute offering superior electrical performance relative to the IXFH60N20. This device provides 65A continuous drain current, exceeding the original specification by 8.3%, with reduced on-resistance of 25 mOhm compared to 33 mOhm. Gate charge is significantly lower at 98 nC versus 155 nC, resulting in reduced switching losses. Power dissipation capability is 330W, exceeding the original 300W specification. The extended upper operating temperature limit of 175°C provides additional thermal margin. Package variant TO-247AC is mechanically compatible within the TO-247 family. Active product status ensures long-term availability and supply chain stability. RoHS3 compliance and MSL-1 rating match the original specification.

STW75NF20 (STMicroelectronics)

The STW75NF20 is an active substitute offering the highest continuous drain current at 75A, providing 25% current margin above the original specification. Gate charge is minimized at 84 nC, the lowest among all candidates, reducing switching losses and gate drive requirements. Input capacitance is substantially lower at 3260 pF, improving switching performance. On-resistance of 34 mOhm is comparable to the original at 33 mOhm. Operating temperature range of -50°C to 150°C encompasses the original specification. Package variant TO-247-3 is mechanically compatible within the TO-247 family. Active product status ensures availability. RoHS3 compliance and MSL-1 rating match the original specification. Note: Power dissipation maximum of 190W is lower than the original 300W specification and must be evaluated against application thermal requirements.

Selection Basis

Both substitute parts are active products with full RoHS3 compliance and unlimited moisture sensitivity ratings. The IRFP4227PBF is recommended for applications requiring maximum power dissipation capability and thermal performance. The STW75NF20 is recommended for applications prioritizing switching speed and gate charge minimization, provided thermal design accommodates the lower power dissipation rating.

Frequently Asked Questions (FAQ)

Q: Can the IRFP4227PBF directly replace the IXFH60N20 in existing designs?

A: The IRFP4227PBF meets all mandatory electrical compatibility criteria: 200V Vdss, N-Channel MOSFET technology, and through-hole mounting. The TO-247AC package is mechanically compatible with TO-247AD within standard PCB footprints. Electrical performance is superior across all key parameters. Pin configuration within the TO-247 family is identical. Direct substitution is supported from an electrical and mechanical standpoint.

Q: What is the significance of the different TO-247 package variants (TO-247AD, TO-247AC, TO-247-3)?

A: All three variants are members of the TO-247 family and share identical pin configurations and mechanical dimensions suitable for standard TO-247 PCB footprints. The letter designations (AD, AC, -3) indicate minor manufacturing process variations by different manufacturers but do not affect electrical performance or mechanical compatibility. Devices are interchangeable at the PCB level.

Q: Why does the STW75NF20 have lower power dissipation (190W) than the original IXFH60N20 (300W)?

A: Power dissipation rating reflects the maximum thermal power the device can safely dissipate under specified conditions. The STW75NF20 achieves lower on-resistance and gate charge through advanced process technology, which typically results in different thermal characteristics. The lower rating does not indicate inferior performance but rather reflects the specific thermal design of that device. Application thermal analysis must confirm the 190W rating is adequate for the intended use case.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. Both the IRFP4227PBF and STW75NF20 carry RoHS3 compliance certification, matching the original IXFH60N20. All three devices are REACH Unaffected and carry MSL-1 (Unlimited) moisture sensitivity ratings.

Q: What is the impact of lower gate charge on circuit design?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. Lower gate charge reduces the energy required from the gate driver circuit and decreases switching time, resulting in lower switching losses. Both substitute parts feature reduced gate charge (98 nC for IRFP4227PBF and 84 nC for STW75NF20) compared to the original (155 nC), allowing for faster switching and improved efficiency. Existing gate driver circuits designed for the IXFH60N20 will operate with improved performance margins using either substitute.

Q: Which substitute part offers the best overall performance?

A: Performance optimization depends on application priorities. The IRFP4227PBF provides the highest power dissipation capability (330W) and extended temperature range (-40°C to 175°C), suitable for high-power applications. The STW75NF20 provides the highest current rating (75A) and lowest gate charge (84 nC), suitable for high-frequency switching applications. Both are active products with full compliance certifications.

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