IXFH58N20 Equivalent & Substitute Parts

Part Overview

The IXFH58N20 is an N-Channel MOSFET rated for 200V drain-to-source voltage with 58A continuous drain current at 25°C. Manufactured by IXYS under the HiPerFET™ series, this device is housed in a TO-247AD through-hole package and is rated for 300W maximum power dissipation. The part maintains Active product status with full RoHS3 compliance.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to inventory constraints, manufacturing discontinuation, or application-specific design requirements. The following parts meet the core electrical and mechanical parameters of the IXFH58N20.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	58	A
On-State Resistance (Rds On Max) @ Id, Vgs	40 mOhm @ 29A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 4mA
Gate Charge (Qg Max) @ Vgs	220	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	4400	pF @ 25V
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package	TO-247-3	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH58N20 is determined by the following core parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
Continuous Drain Current (Id): Must meet or exceed 58A at 25°C
On-State Resistance (Rds On): Must not exceed 40 mOhm at rated conditions
Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
Power Dissipation: Must support 300W or greater thermal rating

Mechanical Compatibility Criteria:

Mounting Type: Through Hole required
Package Family: TO-247 series (TO-247AD, TO-247AC, TO-247)
Pin Configuration: 3-pin configuration (Gate, Drain, Source)

Compliance Requirements:

RoHS3 Compliance: Required
Product Status: Active
Technology: N-Channel MOSFET (Metal Oxide)

The substitute parts listed below satisfy all electrical parameters within the specified tolerances and maintain mechanical compatibility with the IXFH58N20 footprint and mounting requirements.

Parameter Comparison

Parameter	IXFH58N20	IXFH90N20X3	IRFP260MPBF	IRFP260NPBF
Manufacturer	IXYS	IXYS	Infineon Technologies	Infineon Technologies
Vdss (V)	200	200	200	200
Id @ 25°C (A)	58	90	50	50
Rds On Max @ Id, Vgs (mOhm)	40 @ 29A, 10V	12.8 @ 45A, 10V	40 @ 28A, 10V	40 @ 28A, 10V
Vgs(th) Max @ Id (V)	4 @ 4mA	4.5 @ 1.5mA	4 @ 250µA	4 @ 250µA
Qg Max @ Vgs (nC)	220 @ 10V	78 @ 10V	234 @ 10V	234 @ 10V
Ciss Max @ Vds (pF)	4400 @ 25V	5420 @ 25V	4057 @ 25V	4057 @ 25V
Power Dissipation Max (W)	300	390	300	300
Operating Temperature Range (°C)	-55 to 150	-55 to 150	-55 to 175	-55 to 175
Package	TO-247AD	TO-247	TO-247AC	TO-247AC
RoHS3 Compliance	Yes	Yes	Yes	Yes
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

IXFH90N20X3 (IXYS)

The IXFH90N20X3 is a direct series upgrade within the IXYS HiPerFET™ family. It exceeds the IXFH58N20 in continuous drain current (90A vs. 58A) and power dissipation (390W vs. 300W). The on-state resistance is significantly lower (12.8 mOhm vs. 40 mOhm), resulting in reduced conduction losses. Gate charge is substantially lower (78 nC vs. 220 nC), enabling faster switching performance. Both devices share identical Vdss (200V), operating temperature range (-55°C to 150°C), and RoHS3 compliance. The IXFH90N20X3 is packaged in TO-247 (standard) versus TO-247AD (variant), both compatible with TO-247-3 footprints. This substitute is suitable for applications requiring improved thermal performance or higher current capacity within the same voltage class.

IRFP260MPBF and IRFP260NPBF (Infineon Technologies)

Both IRFP260 variants are Infineon HEXFET® devices rated for 200V Vdss and 50A continuous drain current. On-state resistance matches the IXFH58N20 specification (40 mOhm at comparable conditions). Gate threshold voltage and input capacitance are within compatible ranges. These devices offer an extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C), providing thermal margin in high-temperature applications. Both variants maintain RoHS3 compliance and Active product status. The IRFP260 series is packaged in TO-247AC, a standard TO-247 variant compatible with TO-247-3 footprints. The primary trade-off is reduced continuous drain current (50A vs. 58A), making these substitutes suitable for applications where the IXFH58N20's current rating exceeds design requirements or where Infineon device qualification is mandated.

Frequently Asked Questions (FAQ)

Q: Can the IXFH90N20X3 be used as a direct replacement for the IXFH58N20?

A: The IXFH90N20X3 is electrically compatible as a substitute. Both devices share identical Vdss (200V), operating temperature range, and RoHS3 compliance. The IXFH90N20X3 provides higher current capacity (90A vs. 58A) and lower on-state resistance (12.8 mOhm vs. 40 mOhm). Mechanical compatibility is confirmed through TO-247 family packaging. Verification of gate drive circuitry compatibility is required, as the IXFH90N20X3 has lower gate charge (78 nC vs. 220 nC), which may affect switching transient behavior in existing designs.

Q: What is the difference between TO-247AD and TO-247AC packaging?

A: TO-247AD and TO-247AC are both variants of the TO-247-3 footprint family. The primary difference is internal lead frame geometry and thermal characteristics. Both are mechanically compatible with standard TO-247 PCB layouts. The IXFH58N20 uses TO-247AD, while substitute parts use TO-247 or TO-247AC. All three variants maintain identical pin spacing and mounting hole positions, ensuring direct mechanical substitution without PCB redesign.

Q: Why do the IRFP260 variants have lower continuous drain current than the IXFH58N20?

A: The IRFP260MPBF and IRFP260NPBF are rated for 50A continuous drain current at 25°C, compared to the IXFH58N20's 58A rating. This reflects different die design and thermal management approaches between manufacturers. Despite lower current rating, both IRFP260 variants maintain equivalent on-state resistance (40 mOhm) and power dissipation (300W), making them suitable for applications where the IXFH58N20's current capacity exceeds design margins.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IXFH90N20X3, IRFP260MPBF, and IRFP260NPBF all carry RoHS3 compliance certification. All substitute parts maintain REACH Unaffected status and EAR99 export classification, matching the IXFH58N20's regulatory profile.

Q: What is the significance of gate charge differences between these devices?

A: Gate charge (Qg) directly affects switching speed and gate drive power requirements. The IXFH58N20 has 220 nC gate charge, while the IXFH90N20X3 has significantly lower gate charge (78 nC). Lower gate charge enables faster switching transitions and reduces driver power dissipation. The IRFP260 variants have 234 nC gate charge, slightly higher than the IXFH58N20. Gate drive circuit design must accommodate these differences to ensure stable switching performance.

Q: Can the IRFP260 variants be used in high-temperature applications?

A: Yes. The IRFP260MPBF and IRFP260NPBF are rated for operating temperatures up to 175°C (junction temperature), compared to the IXFH58N20's 150°C maximum. This 25°C thermal margin makes the IRFP260 variants suitable for applications with elevated ambient temperatures or high power dissipation environments where extended temperature operation is required.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message