IXFH52N30Q N-Channel 300V 52A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH52N30Q is an N-Channel MOSFET manufactured by IXYS, rated for 300V drain-to-source voltage and 52A continuous drain current at 25°C. This device is part of the HiPerFET™ Q Class series and is packaged in a TO-247AD through-hole configuration with a maximum power dissipation of 360W. The IXFH52N30Q carries a product status of "Not For New Designs," indicating that while the part remains in inventory, IXYS has transitioned this model out of active development. Identification of equivalent and substitute parts is necessary for applications requiring continued supply, design flexibility, or performance optimization within the same voltage and current class.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	300	V
Continuous Drain Current (Id) @ 25°C	52	A (Tc)
On-State Resistance (Rds On Max) @ 500mA, 10V	60	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 4mA	4	V
Gate Charge (Qg Max) @ 10V	150	nC
Input Capacitance (Ciss Max) @ 25V	5300	pF
Power Dissipation (Max)	360	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
Gate Drive Voltage	10	V

Substitute Part Grouping Explanation

Substitution of the IXFH52N30Q is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 300V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Mounting Type: Must be Through Hole
Package Case: Must be TO-247-3
Operating Temperature Range: Must support -55°C to 150°C (TJ)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute parts must meet or exceed 52A at 25°C
On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide thermal margin
Gate Drive Voltage: Must be compatible with 10V drive specification

The following parts satisfy all primary substitution criteria and are therefore electrically and mechanically compatible with the IXFH52N30Q:

IXFH56N30X3 – IXYS HiPerFET™ Ultra X3 series; 56A continuous current; improved Rds On performance
IXFH69N30P – IXYS HiPerFET™ Polar series; 69A continuous current; higher power dissipation rating
IXFH86N30T – IXYS HiPerFET™ Trench series; 86A continuous current; highest power dissipation rating
AOK60N30L – Alpha & Omega Semiconductor; 60A continuous current; obsolete product status

Parameter Comparison

Parameter	IXFH52N30Q	IXFH56N30X3	IXFH69N30P	IXFH86N30T	AOK60N30L	Unit
Manufacturer	IXYS	IXYS	IXYS	IXYS	Alpha & Omega	—
Vdss	300	300	300	300	300	V
Id @ 25°C	52	56	69	86	60	A (Tc)
Rds On (Max)	60 @ 500mA	27 @ 28A	49 @ 500mA	43 @ 43A	56 @ 30A	mOhm
Vgs(th) (Max)	4 @ 4mA	4.5 @ 1.5mA	5 @ 4mA	5 @ 4mA	4.1 @ 250µA	V
Qg (Max) @ 10V	150	56	180	180	106	nC
Ciss (Max) @ 25V	5300	3750	4960	11300	5330	pF
Power Dissipation (Max)	360	320	500	860	658	W (Tc)
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	—
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	—
Vgs (Max)	±20	±20	±20	±20	±30	V
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	—
Product Status	Not For New Designs	Active	Active	Active	Obsolete	—

Engineering Selection Recommendations

IXFH56N30X3 (IXYS HiPerFET™ Ultra X3)

The IXFH56N30X3 is an active product with ROHS3 compliance and REACH unaffected status. This part offers a 56A continuous current rating, exceeding the IXFH52N30Q by 4A, with significantly improved on-state resistance of 27 mOhm compared to 60 mOhm. Gate charge is reduced to 56 nC, resulting in lower switching losses. The power dissipation rating of 320W is lower than the main part, requiring thermal evaluation for high-power applications. This substitute is suitable for direct replacement in applications where improved efficiency and reduced gate drive requirements are beneficial.

IXFH69N30P (IXYS HiPerFET™ Polar)

The IXFH69N30P is an active product with ROHS3 compliance and REACH unaffected status. This part provides 69A continuous current with 49 mOhm on-state resistance and 500W power dissipation, offering substantial thermal margin over the main part. Gate charge of 180 nC is higher than the IXFH52N30Q, requiring consideration in high-frequency switching applications. This substitute is appropriate for applications requiring higher current capacity and improved thermal performance.

IXFH86N30T (IXYS HiPerFET™ Trench)

The IXFH86N30T is an active product with ROHS3 compliance and REACH unaffected status. This part delivers 86A continuous current with 43 mOhm on-state resistance and 860W power dissipation, providing the highest thermal capability among all substitutes. Input capacitance is elevated at 11300 pF, requiring gate drive circuit evaluation. This substitute is suitable for high-current, high-power applications where thermal performance is critical.

AOK60N30L (Alpha & Omega Semiconductor)

The AOK60N30L carries an obsolete product status and is not recommended for new designs or long-term supply assurance. While electrically compatible with 60A continuous current and 658W power dissipation, the obsolete designation indicates discontinued manufacturing and limited future availability. This part should be considered only for legacy system maintenance where no alternative exists.

Frequently Asked Questions (FAQ)

Q: Can the IXFH52N30Q be directly replaced with any of these substitute parts?

A: All four substitute parts are electrically and mechanically compatible with the IXFH52N30Q, sharing identical 300V Vdss rating, N-Channel configuration, TO-247-3 package, and through-hole mounting. Direct physical replacement is possible. However, circuit performance characteristics will change due to differences in on-state resistance, gate charge, and power dissipation ratings. Circuit validation is required to confirm suitability for specific applications.

Q: What is the primary advantage of the IXFH56N30X3 over the IXFH52N30Q?

A: The IXFH56N30X3 offers significantly lower on-state resistance (27 mOhm versus 60 mOhm) and reduced gate charge (56 nC versus 150 nC). These characteristics result in lower conduction losses and reduced switching losses, improving overall circuit efficiency. The part is also an active product, ensuring continued availability.

Q: Why is the IXFH86N30T suitable for high-power applications?

A: The IXFH86N30T provides the highest power dissipation rating (860W) and highest continuous current rating (86A) among all substitutes. These characteristics enable operation at higher power levels with improved thermal margin. The lower on-state resistance (43 mOhm) further reduces conduction losses in high-current circuits.

Q: Should the AOK60N30L be used in new designs?

A: No. The AOK60N30L carries an obsolete product status, indicating discontinued manufacturing. While electrically compatible, this part should not be selected for new designs due to uncertain long-term supply availability and lack of active manufacturer support.

Q: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds with lower gate drive current requirements. The IXFH56N30X3 (56 nC) requires significantly less gate drive energy than the IXFH52N30Q (150 nC), reducing power consumption in the gate drive circuit.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed—IXFH56N30X3, IXFH69N30P, IXFH86N30T, and AOK60N30L—are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: What is the significance of the different HiPerFET™ series designations?

A: The series designations (Q Class, Ultra X3, Polar, Trench) indicate different internal device architectures and manufacturing processes used by IXYS. These differences result in varying performance characteristics such as on-state resistance, gate charge, and power dissipation. Selection should be based on specific application requirements rather than series designation alone.

Q: Can input capacitance differences affect circuit design?

A: Yes. Input capacitance (Ciss) affects gate drive circuit design and switching speed. The IXFH56N30X3 has lower Ciss (3750 pF) compared to the IXFH52N30Q (5300 pF), allowing faster switching with the same gate drive circuit. The IXFH86N30T has significantly higher Ciss (11300 pF), requiring gate drive circuit evaluation to maintain switching performance.

Q: What thermal considerations apply when substituting these parts?

A: Power dissipation ratings differ significantly: IXFH52N30Q (360W), IXFH56N30X3 (320W), IXFH69N30P (500W), IXFH86N30T (860W), and AOK60N30L (658W). Applications operating near the thermal limits of the original part may require heatsink modifications when substituting with lower-rated parts. Conversely, higher-rated substitutes provide additional thermal margin.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message