IXFH50N60X N-Channel 600V 50A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH50N60X is an N-Channel 600V 50A MOSFET manufactured by IXYS in the HiPerFET™ Ultra X series. This device is packaged in TO-247 (IXTH) through-hole configuration and rated for 660W maximum power dissipation at case temperature. The part is designated as Last Time Buy, indicating discontinued production status. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and field replacements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	50	A
On-State Resistance (Rds On Max) @ 25A, 10V	73	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	4.5	V
Gate Charge (Qg) @ 10V	116	nC
Power Dissipation (Max)	660	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-247-3	—

Substitute Part Grouping Explanation

Substitution of the IXFH50N60X is determined by the following critical parameters:

Mandatory Compatibility Criteria:

FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 50A minimum at 25°C
Mounting Type: Through Hole
Package: TO-247-3 compatible footprint
Operating Temperature Range: -55°C to 150°C minimum

Performance Considerations:

On-State Resistance (Rds On): Lower or equivalent values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide thermal margin

Substitute parts are grouped into two categories:

Category 1: Manufacturer Recommended (MFR Recommended) Parts explicitly recommended by the original manufacturer as direct replacements with enhanced specifications.

Category 2: Similar Electrical Characteristics Parts from alternative manufacturers meeting or exceeding the mandatory compatibility criteria, with comparable electrical performance within the specified parameter ranges.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg @ 10V (nC)	Power Diss. (W)	Product Status	Package
IXFH50N60X	IXYS	600	50	73	116	660	Last Time Buy	TO-247-3
IXFH60N65X2	IXYS	650	60	52	107	780	Active	TO-247-3
FCH070N60E	onsemi	600	52	70	166	481	Not For New Designs	TO-247-3
IPW60R070CFD7XKSA1	Infineon Technologies	650	31	70	67	156	Active	TO-247-3
IPW60R080P7XKSA1	Infineon Technologies	600	37	80	51	129	Active	TO-247-3
SPW55N80C3FKSA1	Infineon Technologies	800	54.9	85	288	500	Active	TO-247-3
STW42N60M2-EP	STMicroelectronics	600	34	87	55	250	Active	TO-247-3
STW45N65M5	STMicroelectronics	650	35	78	91	210	Active	TO-247-3
STW65N80K5	STMicroelectronics	800	46	80	92	446	Active	TO-247-3
STWA48N60M2	STMicroelectronics	600	42	70	70	300	Active	TO-247-3

Engineering Selection Recommendations

Primary Recommendation: IXFH60N65X2

The IXFH60N65X2 is the manufacturer-recommended substitute from IXYS. This part maintains the same technology platform (HiPerFET™ Ultra X2 series) and offers superior electrical characteristics: 650V Vdss (50V higher rating), 60A continuous drain current (10A higher), and 52mOhm Rds On (21mOhm lower). The device is in Active product status with 19,334 units in stock, ensuring long-term availability. RoHS3 compliance and REACH unaffected status match the original part.

Secondary Recommendations for Active Status Parts:

STWA48N60M2 (STMicroelectronics): Meets 600V/42A minimum requirements with 70mOhm Rds On and 300W power dissipation. Active status with 1,116 units available. Suitable for applications where current requirement is 42A or less.

STW65N80K5 (STMicroelectronics): Provides 800V Vdss rating with 46A continuous current and 80mOhm Rds On. Active status with 1,330 units in stock. Recommended for applications requiring higher voltage margin.

Not Recommended for New Designs:

FCH070N60E (onsemi): Designated "Not For New Designs" status. Although electrical parameters are comparable (600V, 52A, 70mOhm Rds On), this part should not be selected for new production due to lifecycle status.

Limited Current Capability:

IPW60R070CFD7XKSA1 and IPW60R080P7XKSA1 (Infineon Technologies): These CoolMOS™ devices provide lower continuous drain current ratings (31A and 37A respectively) compared to the IXFH50N60X 50A requirement. These parts are suitable only for applications with reduced current demands.

SPW55N80C3FKSA1 (Infineon Technologies): While offering 54.9A continuous current and 800V rating, the gate charge of 288nC is significantly higher than the original 116nC, resulting in increased switching losses and reduced efficiency in high-frequency applications.

Frequently Asked Questions (FAQ)

Q: Can the IXFH60N65X2 directly replace the IXFH50N60X in existing designs?

A: Yes. The IXFH60N65X2 is the manufacturer-recommended substitute. The higher voltage rating (650V vs. 600V) and current rating (60A vs. 50A) provide design margin. The lower Rds On (52mOhm vs. 73mOhm) reduces conduction losses. Pin configuration and TO-247-3 package are identical. No PCB modifications are required.

Q: Why do some substitute parts have lower current ratings than the original IXFH50N60X?

A: The IPW60R070CFD7XKSA1 (31A) and IPW60R080P7XKSA1 (37A) are included as reference alternatives for applications with reduced current requirements. These parts are not suitable as direct replacements for designs requiring the full 50A continuous current capability.

Q: What is the significance of the "Last Time Buy" status on the IXFH50N60X?

A: Last Time Buy indicates that IXYS has discontinued production of this part. Existing inventory (719 units) represents the final available stock. Designs currently using this part must transition to an alternative. The IXFH60N65X2 is the recommended path forward from the same manufacturer.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 Compliant certification and REACH Unaffected status, matching the environmental compliance profile of the original IXFH50N60X.

Q: How does gate charge (Qg) affect part selection?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower Qg values reduce switching losses and allow higher switching frequencies. The IXFH50N60X has 116nC Qg. The IXFH60N65X2 (107nC) and STWA48N60M2 (70nC) offer lower switching losses. The SPW55N80C3FKSA1 (288nC) is significantly higher and unsuitable for high-frequency applications.

Q: Can I use a higher voltage-rated MOSFET (800V) in place of a 600V part?

A: Yes, with design considerations. Higher voltage ratings provide margin against overvoltage transients. However, higher voltage MOSFETs typically exhibit higher Rds On and gate charge at the same current level, increasing conduction and switching losses. The STW65N80K5 (800V, 46A) and SPW55N80C3FKSA1 (800V, 54.9A) are suitable only if thermal and efficiency impacts are acceptable.

Q: What is the difference between TO-247 and TO-247-3 packages?

A: TO-247-3 is the standard three-lead configuration (Gate, Drain, Source). All listed substitute parts use TO-247-3 package, ensuring mechanical and electrical compatibility with the original IXFH50N60X footprint.

Q: Why is the IXFH60N65X2 preferred over other active-status alternatives?

A: The IXFH60N65X2 is the manufacturer-recommended substitute from IXYS, the original manufacturer of the IXFH50N60X. It maintains the same technology platform (HiPerFET™ series), offers superior performance across all key parameters, and has the highest inventory availability (19,334 units). This ensures design continuity and long-term supply security.

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