IXFH44N50P N-Channel 500V 44A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH44N50P is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 44A continuous drain current at 25°C. This device is part of the HiPerFET™ series and is housed in a TO-247AD through-hole package. The part is currently Active in product status with 8383 units in stock.

Equivalent and substitute parts are identified based on matching or closely aligned electrical and mechanical specifications within the N-Channel MOSFET category. Substitutes must maintain compatibility with the 500V voltage rating, similar current handling capability, and through-hole TO-247 package family to ensure direct replacement functionality in existing circuit designs.

Substiute Parts

IXFH44N50P
IXYSIn Stock: 8434IXFH44N50P Datasheet
IXFH44N50P
Current Part
APT42F50B
Microchip TechnologyIn Stock: 1419APT42F50B Datasheet
APT42F50B
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STW26NM50
STMicroelectronicsIn Stock: 21698STW26NM50 Datasheet
STW26NM50
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STW28NM50N
STMicroelectronicsIn Stock: 15231STW28NM50N Datasheet
STW28NM50N
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 44 A (Tc)
Rds On (Max) @ Id, Vgs 140 mOhm @ 22A, 10V
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10V
Power Dissipation (Max) 658 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH44N50P is determined by the following critical parameters:

Primary Matching Criteria:

  • Drain to Source Voltage (Vdss): 500V (exact match required)
  • FET Type: N-Channel (exact match required)
  • Mounting Type: Through Hole (exact match required)
  • Package Family: TO-247 variants (TO-247AD, TO-247-3, TO-247 [B])
  • Technology: MOSFET (Metal Oxide) (exact match required)

Secondary Compatibility Factors:

  • Current - Continuous Drain (Id) @ 25°C: 42A or higher acceptable
  • Rds On (Max) @ Id, Vgs: Lower or equal values acceptable
  • Gate Charge (Qg): Lower values preferred for switching performance
  • Power Dissipation (Max): Equal or higher values acceptable
  • Operating Temperature Range: Minimum -55°C to 150°C required
  • RoHS and REACH Compliance: ROHS3 Compliant and REACH Unaffected required

The three identified substitute parts meet all primary matching criteria and maintain electrical compatibility within acceptable tolerance ranges for direct circuit replacement.

Parameter Comparison

Parameter IXFH44N50P APT42F50B STW26NM50 STW28NM50N
Manufacturer IXYS Microchip Technology STMicroelectronics STMicroelectronics
FET Type N-Channel N-Channel N-Channel N-Channel
Vdss 500V 500V 500V 500V
Id @ 25°C 44A (Tc) 42A (Tc) 30A (Tc) 21A (Tc)
Rds On (Max) @ Id, Vgs 140 mOhm @ 22A, 10V 130 mOhm @ 21A, 10V 120 mOhm @ 13A, 10V 158 mOhm @ 10.5A, 10V
Gate Charge (Qg) @ 10V 98 nC 170 nC 106 nC 50 nC
Power Dissipation (Max) 658W (Tc) 625W (Tc) 313W (Tc) 150W (Tc)
Operating Temperature -55 to 150°C (TJ) -55 to 150°C (TJ) -55 to 150°C (TJ) -55 to 150°C (TJ)
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Product Status Active Active Not For New Designs Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

APT42F50B (Microchip Technology)

The APT42F50B is the closest electrical equivalent to the IXFH44N50P. It maintains the 500V Vdss rating with 42A continuous drain current, representing a 95% current capability match. The device features a lower Rds On value (130 mOhm vs. 140 mOhm), providing improved efficiency characteristics. The APT42F50B is Active in product status with ROHS3 compliance and REACH Unaffected certification. This part is suitable for direct replacement in applications where the 2A current reduction is acceptable.

STW28NM50N (STMicroelectronics)

The STW28NM50N is an Active product from STMicroelectronics rated for 500V with 21A continuous drain current. This device exhibits the lowest gate charge (50 nC) among the substitute options, making it advantageous for high-frequency switching applications. However, the 21A current rating represents a 52% reduction from the IXFH44N50P specification. This part is suitable only for applications with lower current requirements or where gate charge minimization is a primary design objective. ROHS3 compliance and REACH Unaffected status are confirmed.

STW26NM50 (STMicroelectronics)

The STW26NM50 is rated for 500V with 30A continuous drain current, representing a 68% current capability match. This device carries a "Not For New Designs" product status, indicating it is in end-of-life phase. While electrically compatible and ROHS3 compliant, this part should not be selected for new circuit designs. It remains available for legacy system maintenance or repair applications where existing designs already incorporate this component.

Recommendation Summary:

For new designs requiring direct replacement of the IXFH44N50P, the APT42F50B is the preferred substitute, offering the highest current capability and Active product status. The STW28NM50N is suitable for applications prioritizing low gate charge characteristics with reduced current requirements. The STW26NM50 is restricted to legacy applications only.

Frequently Asked Questions (FAQ)

Q: Can the APT42F50B directly replace the IXFH44N50P in all applications?

A: The APT42F50B is electrically compatible for direct replacement in applications where the 42A continuous drain current rating is sufficient. Both devices share identical 500V Vdss ratings, TO-247-3 package specifications, and operating temperature ranges. The APT42F50B's lower Rds On value (130 mOhm vs. 140 mOhm) provides improved performance. Verification of circuit current requirements is necessary to confirm suitability.

Q: What is the significance of the "Not For New Designs" status on the STW26NM50?

A: "Not For New Designs" indicates the STW26NM50 is in end-of-life phase and should not be incorporated into new circuit designs. This part remains available for existing inventory and legacy system support. New designs should utilize Active status parts such as the APT42F50B or STW28NM50N.

Q: Are all substitute parts housed in the same TO-247 package?

A: All substitute parts use TO-247-3 package specifications, which are mechanically and electrically compatible with the IXFH44N50P TO-247AD package. The TO-247 family maintains consistent pin configurations and thermal characteristics across variants, enabling direct socket replacement.

Q: How does gate charge affect device selection?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge values reduce switching losses and enable higher switching frequencies. The STW28NM50N exhibits the lowest gate charge (50 nC) compared to the IXFH44N50P (98 nC), making it advantageous for high-frequency applications. The APT42F50B has higher gate charge (170 nC), which may increase switching losses in high-frequency circuits.

Q: What compliance certifications are required for substitute parts?

A: All identified substitute parts maintain ROHS3 compliance and REACH Unaffected status, matching the IXFH44N50P certifications. These certifications ensure regulatory compliance for industrial and commercial applications. Compliance status is a mandatory requirement for substitution eligibility.

Q: Can the STW28NM50N be used in applications designed for 44A continuous current?

A: No. The STW28NM50N is rated for 21A continuous drain current, which is insufficient for applications requiring 44A operation. Using an undersized device creates thermal stress and reduces circuit reliability. The STW28NM50N is suitable only for applications with current requirements at or below 21A.

Q: How do Rds On values impact circuit performance?

A: Rds On (on-state resistance) directly affects power dissipation and heat generation. Lower Rds On values reduce conduction losses and improve efficiency. The APT42F50B (130 mOhm) and STW26NM50 (120 mOhm) both provide lower Rds On than the IXFH44N50P (140 mOhm), resulting in improved thermal performance. The STW28NM50N (158 mOhm) exhibits higher Rds On, increasing power dissipation.

Q: Are there inventory considerations when selecting a substitute?

A: Current inventory levels are: IXFH44N50P (8383 units), APT42F50B (1310 units), STW26NM50 (21681 units), and STW28NM50N (15210 units). Inventory availability may influence selection for high-volume production requirements. The STW26NM50 offers the highest stock level despite its end-of-life status.

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