IXFH42N20 Equivalent & Substitute Parts

Part Overview

The IXFH42N20 is an N-Channel MOSFET manufactured by IXYS, rated for 200V drain-to-source voltage with 42A continuous drain current at 25°C. This device is part of the HiPerFET™ series and is housed in a TO-247AD through-hole package. The component is Active in product status and fully RoHS3 compliant.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges, allowing for circuit design flexibility, inventory optimization, or when the primary part becomes unavailable.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	42	A
Rds On (Max) @ 500mA, 10V	60	mOhm
Gate Charge (Qg) @ 10V	220	nC
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH42N20 is determined by the following criteria:

Electrical Compatibility Parameters:

Drain-to-Source Voltage (Vdss) must be equal to or greater than 200V
Continuous Drain Current (Id) must be equal to or greater than 42A
Gate-Source Voltage (Vgs) maximum must be ±20V or greater
Operating temperature range must encompass -55°C to 150°C
FET type must be N-Channel MOSFET

Mechanical Compatibility Parameters:

Mounting type must be Through Hole
Package type must be TO-247-3 or equivalent footprint

Compliance Requirements:

RoHS3 compliance required
REACH Unaffected status required
Active product status required

The IXFH56N30X3 meets these substitution criteria with higher voltage and current ratings, making it suitable for applications requiring enhanced performance headroom.

Parameter Comparison

Parameter	IXFH42N20	IXFH56N30X3	Unit
Manufacturer	IXYS	IXYS	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	200	300	V
Continuous Drain Current (Id) @ 25°C	42	56	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max)	60 @ 500mA, 10V	27 @ 28A, 10V	mOhm
Vgs(th) (Max)	4 @ 4mA	4.5 @ 1.5mA	V
Gate Charge (Qg) @ 10V	220	56	nC
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss) @ 25V	4400	3750	pF
Power Dissipation (Max)	300	320	W
Operating Temperature	-55 to 150	-55 to 150	°C
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-247-3	TO-247-3	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—
Product Status	Active	Active	—

Engineering Selection Recommendations

IXFH42N20 Primary Selection: Use the IXFH42N20 when the application requires a 200V rated N-Channel MOSFET with 42A continuous drain current and the specified electrical characteristics are matched to circuit requirements. This device is Active in product status and maintains full RoHS3 and REACH compliance.

IXFH56N30X3 Substitute Selection: The IXFH56N30X3 is a direct substitute when higher voltage margin (300V vs. 200V) and increased current capacity (56A vs. 42A) are beneficial to circuit design. This device provides lower on-resistance (27mOhm vs. 60mOhm) and reduced gate charge (56nC vs. 220nC), resulting in improved switching efficiency. Both devices maintain identical operating temperature ranges, identical maximum gate-source voltage ratings, and equivalent mechanical compatibility through TO-247-3 packaging. Both are Active products with full RoHS3 and REACH compliance.

The IXFH56N30X3 is suitable for applications where design margin enhancement or thermal performance improvement is required without circuit redesign.

Frequently Asked Questions (FAQ)

Q: Can the IXFH56N30X3 be used as a direct replacement for the IXFH42N20?

A: Yes. The IXFH56N30X3 is electrically and mechanically compatible. Both devices feature N-Channel MOSFET technology, identical ±20V gate-source voltage ratings, matching operating temperature ranges (-55°C to 150°C), and identical TO-247-3 through-hole packaging. The substitute provides higher voltage and current ratings, lower on-resistance, and reduced gate charge.

Q: What are the key differences between these two parts?

A: The IXFH56N30X3 has a higher Vdss rating (300V vs. 200V), higher continuous drain current (56A vs. 42A), significantly lower on-resistance (27mOhm vs. 60mOhm), and substantially lower gate charge (56nC vs. 220nC). Input capacitance is also lower (3750pF vs. 4400pF). Power dissipation is marginally higher (320W vs. 300W).

Q: Are both parts available in the same package?

A: Both devices use TO-247-3 through-hole packaging. The IXFH42N20 is supplied in standard packaging, while the IXFH56N30X3 is supplied in Tube packaging. Both are mechanically compatible for PCB mounting.

Q: Do both parts meet the same compliance standards?

A: Yes. Both the IXFH42N20 and IXFH56N30X3 are RoHS3 compliant and REACH Unaffected. Both are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: Which part should be selected for a new design?

A: For new designs, the IXFH56N30X3 is the preferred choice when circuit voltage and current requirements permit. The higher ratings provide design margin, improved thermal performance through lower on-resistance, and faster switching due to reduced gate charge. The IXFH42N20 remains appropriate when the lower voltage and current ratings are matched to specific application requirements.

Q: Are there any thermal considerations when substituting?

A: Both devices operate across the identical temperature range (-55°C to 150°C). The IXFH56N30X3 exhibits lower on-resistance, which reduces resistive heating in high-current applications. Thermal management design should account for the specific current levels and duty cycles in the application.

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