IXFH40N50Q Equivalent & Substitute Parts

Part Overview

The IXFH40N50Q is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 40A continuous drain current at 25°C. This device belongs to the HiPerFET™ Q Class series and is housed in a TO-247AD through-hole package. The part is currently in Active product status with 933 units in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter tolerances while maintaining mechanical compatibility. The IXFH40N50Q operates across a wide temperature range of -55°C to 150°C and dissipates up to 500W, making it suitable for high-power switching applications requiring robust voltage handling.

Substiute Parts

IXFH40N50Q

IXYSIn Stock: 977IXFH40N50Q Datasheet

Current PartRFQ

IPW50R140CPFKSA1

Infineon TechnologiesIn Stock: 1138IPW50R140CPFKSA1 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH40N50Q is determined by the following critical parameters:

Voltage Rating: The substitute must support a Vdss rating equal to or greater than 500V to maintain voltage margin in the application circuit.

Current Rating: The substitute must support continuous drain current (Id) sufficient for the application. The IXFH40N50Q provides 40A; substitutes with lower current ratings require circuit redesign validation.

On-State Resistance (Rds On): The substitute must maintain Rds On at or below 140 mOhm @ 10V to ensure equivalent power dissipation and thermal performance.

Package Compatibility: The substitute must use TO-247-3 through-hole packaging to ensure mechanical fit and thermal interface compatibility.

Temperature Range: The substitute must support the full operating temperature range of -55°C to 150°C.

Compliance: The substitute must maintain ROHS3 compliance and REACH Unaffected status for regulatory alignment.

Based on these criteria, the IPW50R140CPFKSA1 from Infineon Technologies qualifies as a substitute part.

Parameter Comparison

Engineering Selection Recommendations

Primary Part (IXFH40N50Q): This device maintains Active product status with established supply availability (933 units in stock). It is the preferred selection for new designs requiring 40A continuous current capacity with 500V voltage rating and 500W power dissipation capability.

Substitute Part (IPW50R140CPFKSA1): This Infineon device carries Last Time Buy status, indicating limited future availability. It is suitable for applications where the 23A continuous current rating is sufficient and where the lower power dissipation (192W) aligns with thermal requirements. The substitute provides equivalent Rds On performance (140 mOhm) and maintains full compliance with ROHS3 and REACH requirements.

The IPW50R140CPFKSA1 exhibits lower gate charge (64 nC versus 130 nC) and reduced input capacitance, which may reduce switching losses in high-frequency applications. However, the reduced maximum gate voltage (±20V versus ±30V) and lower current rating require circuit validation before substitution.

Frequently Asked Questions (FAQ)

Q: Can the IPW50R140CPFKSA1 directly replace the IXFH40N50Q in all applications?

A: Direct replacement is limited by current rating. The IPW50R140CPFKSA1 supports 23A continuous current versus 40A for the IXFH40N50Q. Applications requiring the full 40A rating cannot use this substitute without circuit redesign. Both devices maintain identical Rds On specifications (140 mOhm @ 10V) and TO-247-3 package compatibility.

Q: What is the significance of the Last Time Buy status for the IPW50R140CPFKSA1?

A: Last Time Buy status indicates that Infineon has announced end-of-life for this product. While currently available (1083 units in stock), future procurement will not be possible. The IXFH40N50Q, with Active status, is recommended for new designs requiring long-term supply assurance.

Q: Are there thermal management differences between these devices?

A: The IXFH40N50Q dissipates up to 500W (Tc), while the IPW50R140CPFKSA1 dissipates up to 192W (Tc). Applications with high thermal loads require the higher power dissipation capability of the primary part. Both devices operate across -55°C to 150°C and use identical TO-247-3 through-hole packaging.

Q: How do gate charge differences affect circuit performance?

A: The IPW50R140CPFKSA1 exhibits lower gate charge (64 nC @ 10V) compared to the IXFH40N50Q (130 nC @ 10V). Lower gate charge reduces switching losses and driver power requirements, potentially improving efficiency in high-frequency switching applications. Gate driver circuits must accommodate the maximum gate voltage specifications (±30V for IXFH40N50Q, ±20V for IPW50R140CPFKSA1).

Q: Is the TO-247-3 package identical between both devices?

A: Both devices use TO-247-3 through-hole packaging, ensuring mechanical and thermal interface compatibility. The IXFH40N50Q uses supplier package designation TO-247AD (IXFH), while the IPW50R140CPFKSA1 uses PG-TO247-3-1. These designations refer to the same industry-standard TO-247-3 footprint and pinout.

Q: What compliance certifications apply to both devices?

A: Both the IXFH40N50Q and IPW50R140CPFKSA1 are ROHS3 Compliant and REACH Unaffected. Both carry ECCN classification EAR99 and HTSUS code 8541.29.0095, meeting regulatory requirements for industrial and commercial applications.