IXFH40N30 N-Channel MOSFET 300V 40A Equivalent & Substitute Parts

Part Overview

The IXFH40N30 is an N-Channel MOSFET manufactured by IXYS, part of the HiPerFET™ series. This device is rated for 300V drain-to-source voltage with a continuous drain current of 40A at 25°C and maximum power dissipation of 300W. The component is housed in a Through Hole TO-247AD package and is classified as Active product status with full RoHS3 compliance.

Substitute parts are identified when equivalent electrical performance can be achieved within the same voltage class and package family while maintaining or improving upon the original specifications. Alternative models may be required due to inventory availability, manufacturing discontinuation, or application-specific performance optimization.

Substiute Parts

IXFH40N30

IXYSIn Stock: 1131IXFH40N30 Datasheet

Current PartRFQ

IXFH56N30X3

IXYSIn Stock: 2261IXFH56N30X3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH40N30 is determined by the following critical parameters:

Mandatory Matching Criteria:

• Drain to Source Voltage (Vdss): 300V (exact match required)
• FET Type: N-Channel (exact match required)
• Package Family: TO-247 series (mechanical and thermal compatibility)
• Operating Temperature Range: -55°C to 150°C (minimum requirement)
• Technology: MOSFET Metal Oxide (exact match required)

Performance Compatibility Criteria:

• Continuous Drain Current (Id): Equal to or greater than 40A
• Power Dissipation: Equal to or greater than 300W
• Rds On: Equal to or lower than 85mOhm (lower values indicate improved performance)
• Gate Charge (Qg): Lower values preferred for switching efficiency

The IXFH56N30X3 qualifies as a direct substitute based on matching voltage class, FET type, package family, and temperature range, while providing enhanced current handling and reduced on-resistance characteristics.

Parameter Comparison

Engineering Selection Recommendations

IXFH40N30 Primary Selection: The IXFH40N30 is suitable for applications requiring 300V, 40A N-Channel MOSFET performance in Through Hole TO-247 packaging. Active product status ensures ongoing manufacturer support and supply chain availability. Full RoHS3 compliance and REACH unaffected status satisfy environmental and regulatory requirements for industrial and commercial applications.

IXFH56N30X3 Substitute Selection: The IXFH56N30X3 provides equivalent voltage and temperature specifications with enhanced performance characteristics. The device delivers 56A continuous drain current versus 40A, representing a 40% increase in current capacity. On-resistance is reduced to 27mOhm from 85mOhm, resulting in lower conduction losses. Gate charge is reduced to 56nC from 200nC, enabling faster switching transitions. Input capacitance is reduced to 3750pF from 4800pF. Power dissipation capability increases to 320W from 300W. Both devices maintain Active product status, RoHS3 compliance, and REACH unaffected status.

The IXFH56N30X3 is selected when application requirements permit higher current handling, reduced thermal dissipation is beneficial, or faster switching performance is required within the same voltage and package constraints.

Frequently Asked Questions (FAQ)

Q: Can the IXFH56N30X3 directly replace the IXFH40N30 in existing designs?

A: Yes. Both devices share identical drain-to-source voltage (300V), FET type (N-Channel), package family (TO-247-3), and operating temperature range (-55°C to 150°C). The IXFH56N30X3 provides equal or superior performance across all critical parameters. PCB layout and thermal management remain compatible due to identical package geometry.

Q: What are the key performance differences between these devices?

A: The IXFH56N30X3 provides 40% higher continuous drain current (56A vs. 40A), 68% lower on-resistance (27mOhm vs. 85mOhm), 72% lower gate charge (56nC vs. 200nC), and 22% lower input capacitance (3750pF vs. 4800pF). These improvements result in reduced conduction losses, faster switching, and lower drive requirements.

Q: Are both devices available in the same packaging options?

A: Both devices use Through Hole TO-247-3 package configuration. The IXFH40N30 is supplied in standard packaging, while the IXFH56N30X3 is supplied in Tube packaging. Mechanical dimensions and PCB footprints are identical, ensuring direct board-level compatibility.

Q: Do both devices meet the same compliance standards?

A: Yes. Both the IXFH40N30 and IXFH56N30X3 are RoHS3 compliant and REACH unaffected. Both devices carry Moisture Sensitivity Level 1 (Unlimited) and are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: Which device should be selected for new designs?

A: For new designs, the IXFH56N30X3 is the preferred selection. It provides superior electrical performance, lower thermal dissipation, and faster switching characteristics while maintaining full compatibility with the 300V voltage class and TO-247 package family. Active product status ensures long-term availability.

Q: What is the impact of reduced gate charge on circuit design?

A: Reduced gate charge (56nC vs. 200nC) decreases the energy required to drive the gate terminal, reducing driver power consumption and enabling use of lower-current gate drivers. This results in faster switching transitions and improved overall system efficiency.