IXFH36N60P N-Channel 600V 36A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH36N60P is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage with 36A continuous drain current at 25°C. This device is part of the HiPerFET™ series and is housed in a TO-247AD through-hole package. The part is currently in active production status with 1979 units in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible mechanical packaging and thermal characteristics. Alternative models may be required due to supply constraints, design optimization, or application-specific performance requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	36	A
On-State Resistance (Rds On) @ 18A, 10V	190	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	5	V
Gate Charge (Qg) @ 10V	102	nC
Input Capacitance (Ciss) @ 25V	5800	pF
Power Dissipation (Max)	650	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a Vdss rating of 600V or higher to ensure safe operation within the application's voltage envelope.

Current Rating: Substitute parts must support continuous drain current (Id) at or above the application requirement. The IXFH36N60P operates at 36A; substitutes with lower current ratings (22A, 20.2A, 18A, 21A, 20.7A, 24A) are acceptable only when application current demands do not exceed the substitute's rating.

Package Compatibility: All identified substitutes use TO-247-3 or equivalent through-hole packaging, ensuring mechanical and thermal interface compatibility.

On-State Resistance (Rds On): Substitute parts with Rds On values at or below 190mOhm at their respective test conditions maintain equivalent or superior conduction losses.

Operating Temperature: All substitutes support the -55°C to 150°C operating range, ensuring thermal compatibility.

Technology Type: Substitutes include both conventional MOSFET and SiCFET (Silicon Carbide) technologies. SiCFET devices offer superior switching characteristics and lower losses but operate at different gate drive voltages.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg @ 10V (nC)	Ciss (pF)	Pd Max (W)	Package	Status
IXFH36N60P	IXYS	600	36	190 @ 18A	102	5800	650	TO-247-3	Active
FCH170N60	Fairchild Semiconductor	600	22	170 @ 11A	55	2860	227	TO-247-3	Active
IPW60R190C6FKSA1	Infineon Technologies	600	20.2	190 @ 9.5A	63	1400	151	TO-247-3	Not For New Designs
IPW60R190P6FKSA1	Infineon Technologies	600	20.2	190 @ 7.6A	11	1750	151	TO-247-3	Active
R6024KNZ1C9	Rohm Semiconductor	600	24	165 @ 11.3A	45	2000	245	TO-247-3	Obsolete
SCT3120ALGC11	Rohm Semiconductor	650	21	156 @ 6.7A	38	460	103	TO-247-3	Active
SPW20N60C3FKSA1	Infineon Technologies	650	20.7	190 @ 13.1A	114	2400	208	TO-247-3	Active
STW24N60DM2	STMicroelectronics	600	18	200 @ 9A	29	1055	150	TO-247-3	Active
STW24N60M2	STMicroelectronics	600	18	190 @ 9A	29	1060	150	TO-247-3	Active

Engineering Selection Recommendations

Active Production Status: IPW60R190P6FKSA1, SPW20N60C3FKSA1, STW24N60DM2, STW24N60M2, FCH170N60, and SCT3120ALGC11 are all in active production. These parts are recommended for new designs and long-term supply assurance.

Compliance & Certifications: All identified substitutes carry RoHS3 compliance and REACH Unaffected status, matching the IXFH36N60P certification profile. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095 or 8542.39.0001.

Obsolete Parts: R6024KNZ1C9 (Rohm) and IPW60R190C6FKSA1 (Infineon) carry obsolete or "Not For New Designs" status. These parts should not be selected for new product development.

Current Rating Considerations: Substitutes with lower continuous drain current ratings (18A to 24A versus 36A) are suitable only when application peak and continuous current demands remain within the substitute's specification. Applications requiring the full 36A capability must retain the IXFH36N60P or select higher-rated alternatives.

Technology Differentiation: SCT3120ALGC11 is a SiCFET device with superior switching performance and lower gate charge (38nC versus 102nC), but operates at 18V gate drive versus the standard 10V. This device is suitable for applications prioritizing efficiency and switching speed.

Thermal Performance: The IXFH36N60P provides 650W maximum power dissipation. Substitutes with lower power ratings (103W to 245W) require thermal management verification for high-power applications.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with lower continuous drain current rating?

A: Yes, provided the application's actual continuous current requirement does not exceed the substitute's Id rating. For example, STW24N60M2 (18A) is suitable for applications drawing 18A or less. Current derating must account for thermal conditions and duty cycle.

Q: Are all substitute parts pin-compatible with the IXFH36N60P?

A: All identified substitutes use TO-247-3 package configuration with identical pin assignments (Gate, Drain, Source). Physical mounting and thermal interface compatibility is maintained across all substitutes.

Q: What is the difference between IPW60R190C6FKSA1 and IPW60R190P6FKSA1?

A: Both are Infineon CoolMOS™ devices rated 600V, 20.2A. The P6 variant (IPW60R190P6FKSA1) is in active production with significantly lower gate charge (11nC versus 63nC), offering faster switching. The C6 variant is marked "Not For New Designs" and should not be selected for new applications.

Q: Is SCT3120ALGC11 a direct replacement?

A: SCT3120ALGC11 is a SiCFET technology device with different electrical characteristics. While it meets voltage and current requirements, it requires 18V gate drive versus the standard 10V. Gate driver compatibility must be verified before selection. This device is suitable for applications where superior switching performance justifies the technology change.

Q: Which substitute offers the best on-state resistance performance?

A: R6024KNZ1C9 (165mOhm @ 11.3A) and SCT3120ALGC11 (156mOhm @ 6.7A) offer lower Rds On values. However, R6024KNZ1C9 is obsolete. SCT3120ALGC11 provides the lowest Rds On among active parts but operates at higher gate drive voltage.

Q: Can I use multiple lower-rated devices in parallel to achieve 36A capability?

A: Parallel operation is not addressed in this substitution analysis. Parallel device configurations require separate thermal, gate drive, and current-sharing analysis beyond the scope of direct part substitution.

Q: What is the inventory status of substitute parts?

A: IPW60R190P6FKSA1 (1283 units), SPW20N60C3FKSA1 (2888 units), STW24N60M2 (25711 units), and SCT3120ALGC11 (2000 units) maintain substantial inventory levels. FCH170N60 (1350 units), STW24N60DM2 (1465 units), and R6024KNZ1C9 (1427 units) also have adequate stock.

Q: Are there thermal performance differences between substitutes?

A: Yes. The IXFH36N60P dissipates 650W maximum, while substitutes range from 103W (SCT3120ALGC11) to 245W (R6024KNZ1C9). Applications with high continuous power dissipation must verify that substitute thermal ratings remain adequate for the intended duty cycle and cooling solution.

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