IXFH36N55Q N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH36N55Q is an N-Channel MOSFET manufactured by IXYS, rated for 550V drain-to-source voltage with 36A continuous drain current at 25°C. This device is part of the HiPerFET™ Q Class series and is housed in a TO-247AD through-hole package. The IXFH36N55Q is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain compatibility with existing circuit designs while meeting or exceeding the electrical and thermal performance requirements of the original specification.

Substiute Parts

IXFH36N55Q

IXYSIn Stock: 5639IXFH36N55Q Datasheet

Current PartRFQ

IRFP360PBF

Vishay SiliconixIn Stock: 18336IRFP360PBF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IXFH36N55Q are identified based on the following critical electrical and mechanical parameters:

Mandatory Compatibility Criteria:

• FET Type: N-Channel MOSFET technology
• Mounting Type: Through Hole configuration
• Package Type: TO-247-3 form factor
• Operating Temperature Range: -55°C to 150°C (TJ)
• RoHS Compliance: ROHS3 Compliant
• Moisture Sensitivity Level: 1 (Unlimited)

Performance Parameters for Substitution:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 550V
• Continuous Drain Current (Id) @ 25°C: Must equal or exceed 36A
• On-State Resistance (Rds On): Lower or equivalent values acceptable
• Gate Charge (Qg): Lower or equivalent values acceptable
• Power Dissipation: Must equal or exceed 500W (Tc)
• Maximum Gate Voltage (Vgs Max): Must accommodate ±30V or greater

The IRFP360PBF does not meet the mandatory voltage rating requirement (400V vs. 550V required) and current rating requirement (23A vs. 36A required). This part is listed in the provided substitute data but does not qualify as a direct functional equivalent based on the specified electrical parameters.

Parameter Comparison

Engineering Selection Recommendations

IXFH36N55Q Status and Compliance: The IXFH36N55Q is classified as obsolete. The device is ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory standards. Current inventory availability is reported at 5,580 pieces.

IRFP360PBF Evaluation: The IRFP360PBF is an active product manufactured by Vishay Siliconix with 18,295 pieces in current inventory. The device is ROHS3 compliant and REACH unaffected. However, the IRFP360PBF exhibits the following parameter deviations from the IXFH36N55Q specification:

• Drain-to-Source Voltage: 400V (vs. 550V required) — 27% reduction
• Continuous Drain Current: 23A (vs. 36A required) — 36% reduction
• Power Dissipation: 280W (vs. 500W required) — 44% reduction
• Maximum Gate Voltage: ±20V (vs. ±30V required) — reduced gate drive margin
• Gate Charge: 210nC (vs. 128nC) — 64% increase

Substitution Determination: The IRFP360PBF does not meet the electrical performance requirements of the IXFH36N55Q. Direct substitution is not permissible for applications requiring the full 550V voltage rating, 36A current capacity, or 500W power dissipation. The IRFP360PBF is suitable only for applications with reduced voltage and current requirements (400V maximum, 23A maximum).

For applications requiring equivalent performance to the IXFH36N55Q, alternative N-Channel MOSFETs with matching or superior voltage, current, and power ratings in TO-247-3 packaging must be evaluated against the specified parameters.

Frequently Asked Questions (FAQ)

Q: Can the IRFP360PBF be used as a direct replacement for the IXFH36N55Q?

A: No. The IRFP360PBF has a maximum drain-to-source voltage of 400V, which is insufficient for applications requiring the 550V rating of the IXFH36N55Q. Additionally, the continuous drain current rating of 23A is below the 36A requirement. Direct substitution is not permissible.

Q: What are the critical parameters that determine MOSFET substitution compatibility?

A: For N-Channel MOSFET substitution, the following parameters must be met or exceeded: drain-to-source voltage (Vdss), continuous drain current (Id) at 25°C, on-state resistance (Rds On), power dissipation rating, maximum gate voltage (Vgs Max), and operating temperature range. Package type and mounting configuration must also match.

Q: Are the IXFH36N55Q and IRFP360PBF pin-compatible?

A: Both devices use the TO-247-3 package, which provides mechanical and pin compatibility. However, electrical parameter differences prevent functional substitution in applications designed for the IXFH36N55Q specifications.

Q: What is the significance of the IXFH36N55Q being classified as obsolete?

A: Obsolete status indicates that the manufacturer has discontinued production. Existing inventory may be available from authorized distributors, but long-term supply cannot be guaranteed. For new designs or production continuity, alternative active products meeting the electrical specifications must be identified.

Q: Does the IRFP360PBF meet the same environmental and regulatory standards as the IXFH36N55Q?

A: Yes. Both devices are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. Moisture sensitivity level is 1 (Unlimited) for both devices.

Q: What should be considered when selecting a substitute for the IXFH36N55Q?

A: Substitute selection must prioritize electrical parameters: the drain-to-source voltage must equal or exceed 550V, continuous drain current must equal or exceed 36A, and power dissipation must equal or exceed 500W. The device must be an N-Channel MOSFET in TO-247-3 through-hole packaging with an operating temperature range of -55°C to 150°C. Active product status and current availability are secondary considerations.