IXFH35N30 Equivalent & Substitute Parts

Part Overview

The IXFH35N30 is an N-Channel MOSFET rated for 300V drain-to-source voltage with 35A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in a TO-247AD package and is part of the HiPerFET™ series. The component is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement planning. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating packaging and compliance requirements.

Substiute Parts

IXFH35N30

IXYSIn Stock: 14167IXFH35N30 Datasheet

Current PartRFQ

STW46NF30

STMicroelectronicsIn Stock: 625727STW46NF30 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXFH35N30 is determined by the following critical parameters:

Voltage Rating: The substitute must maintain a Vdss rating of 300V to ensure safe operation within the same voltage domain.

Current Capacity: The substitute must support a continuous drain current (Id) at or above 35A at 25°C to handle the same load conditions.

Power Dissipation: The substitute must support 300W maximum power dissipation at the case temperature to maintain thermal equivalence.

On-State Resistance (Rds On): The substitute must not exceed 100mOhm at the specified gate-source voltage (10V) to ensure comparable conduction losses.

Gate Charge (Qg): The substitute should maintain gate charge characteristics within acceptable limits to preserve switching behavior.

Package Compatibility: The substitute must use a TO-247-3 through-hole package to ensure mechanical and thermal interface compatibility.

Operating Temperature: The substitute must support the full operating temperature range of -55°C to 150°C (TJ).

The STW46NF30 meets all critical substitution criteria and is classified as an active product with improved compliance status.

Parameter Comparison

Engineering Selection Recommendations

The STW46NF30 is the qualified substitute for the IXFH35N30 based on the following engineering criteria:

Electrical Equivalence: The STW46NF30 meets or exceeds all critical electrical parameters. The 300V Vdss rating matches the original specification. The 42A continuous drain current exceeds the 35A requirement, providing design margin. The 75mOhm Rds On is superior to the 100mOhm specification, resulting in lower conduction losses. The 90nC gate charge is significantly lower than the 200nC original specification, enabling faster switching transitions.

Thermal Compatibility: Both devices support 300W maximum power dissipation at the case temperature. The STW46NF30 extends the maximum junction temperature to 175°C compared to the IXFH35N30's 150°C, providing additional thermal headroom.

Package Compatibility: Both devices use the TO-247-3 through-hole package, ensuring direct mechanical and thermal interface compatibility without PCB redesign.

Product Status and Compliance: The IXFH35N30 is obsolete, creating supply chain risk. The STW46NF30 is an active product with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1), supporting long-term availability and regulatory requirements.

Substitution Feasibility: Direct substitution is feasible without circuit modification. The improved electrical characteristics of the STW46NF30 provide performance enhancement rather than degradation.

Frequently Asked Questions (FAQ)

Q: Can the STW46NF30 directly replace the IXFH35N30 without circuit modification?

A: Yes. The STW46NF30 maintains the same 300V Vdss rating, exceeds the 35A current requirement with 42A capability, and uses the identical TO-247-3 package. No PCB layout changes are required.

Q: What is the significance of the lower Rds On value in the STW46NF30?

A: The STW46NF30 exhibits 75mOhm Rds On compared to the IXFH35N30's 100mOhm. This 25% reduction in on-state resistance decreases conduction losses and heat generation, improving overall circuit efficiency.

Q: Does the lower gate charge of the STW46NF30 affect circuit operation?

A: The STW46NF30's 90nC gate charge is significantly lower than the IXFH35N30's 200nC. This reduces gate drive power requirements and enables faster switching transitions, which may improve circuit performance. Existing gate drive circuits will operate within specification.

Q: Are there thermal considerations when substituting these devices?

A: Both devices support 300W maximum power dissipation. The STW46NF30 extends the maximum junction temperature to 175°C versus 150°C for the IXFH35N30, providing additional thermal margin. Existing thermal management solutions remain adequate.

Q: What is the impact of the IXFH35N30 being obsolete?

A: Obsolete status indicates the IXFH35N30 is no longer manufactured and existing inventory is limited. The STW46NF30 is an active product with established supply chains and long-term availability assurance.

Q: Does the STW46NF30 meet current regulatory requirements?

A: Yes. The STW46NF30 is ROHS3 compliant and carries MSL 1 (unlimited) moisture sensitivity level, meeting current environmental and handling standards. The IXFH35N30 is RoHS non-compliant.

Q: Are the input capacitance values significantly different?

A: The STW46NF30 exhibits 3200pF input capacitance compared to the IXFH35N30's 4800pF at 25V. The lower capacitance reduces gate drive current requirements and may improve switching speed. This difference is not a substitution barrier.

Q: Can the STW46NF30 be used in applications requiring the full -55°C to 150°C temperature range?

A: Yes. The STW46NF30 supports -55°C to 175°C operation, which encompasses the full IXFH35N30 range and extends beyond it.