IXFH32N48Q Equivalent & Substitute Parts Reference

Part Overview

IXFH32N48Q is a N-Channel MOSFET rated for 480V, 32A (Tc), with a power dissipation of 360W (Tc), supplied in a TO-247AD package. The part is listed as obsolete, which necessitates the identification and selection of suitable alternatives. Direct and similar replacement parts are considered strictly according to electrical and mechanical parameters explicitly provided.

Key Parameters

Parameter	Description
Manufacturer Part Number	Unique identifier for part substitution
Manufacturer	Source company ensuring supply lineage
Category	Functional type (Transistors, FETs, MOSFETs)
Series	Product series; relevant for lifecycle and compatibility
Product Status	Lifecycle stage (Active, Obsolete)
FET Type	Channel specification (N-Channel)
Technology	Fabrication method (MOSFET: Metal Oxide)
Drain to Source Voltage (Vdss)	Maximum voltage between drain and source
Current - Continuous Drain (Id) @ 25°C	Continuous drain current at 25°C case temperature
Drive Voltage (Max Rds On, Min Rds On)	Gate-source voltage for Rds On specification
Rds On (Max) @ Id, Vgs	Maximum on-state resistance
Vgs(th) (Max) @ Id	Maximum gate threshold voltage
Gate Charge (Qg) (Max) @ Vgs	Maximum gate charge
Vgs (Max)	Maximum gate-source voltage
Input Capacitance (Ciss) (Max) @ Vds	Maximum input capacitance
Power Dissipation (Max)	Maximum power dissipation at case temperature
Operating Temperature	Allowed junction temperature range
Mounting Type	Mechanical package attachment method
Supplier Device Package	Manufacturer-specific package description
Package / Case	Industry-standard package type
Moisture Sensitivity Level (MSL)	Declared moisture sensitivity rating

Substitute Part Grouping Explanation

Substitute parts are selected based strictly on matching or exceeding the following allowed parameters: FET type (N-Channel), technology (MOSFET), Drain to Source Voltage (Vdss), Current - Continuous Drain (Id) @ 25°C, Rds On (Max), maximum gate-source voltage (Vgs Max), gate charge and input capacitance, package/case type (TO-247AD or TO-247-3), mounting type (Through Hole), and compliance status. The grouping contains both direct cross-references from the same manufacturer and similar alternatives from other suppliers as provided.

Parameter Comparison

Parameter	IXFH32N48Q (IXYS)	IXFH34N50P3 (IXYS)	FDH45N50F-F133 (onsemi)	FDH50N50-F133 (onsemi)
Manufacturer Part Number	IXFH32N48Q	IXFH34N50P3	FDH45N50F-F133	FDH50N50-F133
Manufacturer	IXYS	IXYS	onsemi	onsemi
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
Series	HiPerFET™	HiPerFET™, Polar3™	UniFET™	UniFET™
Product Status	Obsolete	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	480 V	500 V	500 V	500 V
Current - Continuous Drain (Id) @ 25°C	32A (Tc)	34A (Tc)	45A (Tc)	48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	130mOhm @ 15A, 10V	170mOhm @ 17A, 10V	120mOhm @ 22.5A, 10V	105mOhm @ 24A, 10V
Vgs(th) (Max) @ Id	4V @ 4mA	5V @ 4mA	5V @ 250µA	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	300 nC @ 10 V	60 nC @ 10 V	137 nC @ 10 V	137 nC @ 10 V
Vgs (Max)	±20V	±30V	±30V	±20V
Input Capacitance (Ciss) (Max) @ Vds	5200 pF @ 25 V	3260 pF @ 25 V	6630 pF @ 25 V	6460 pF @ 25 V
Power Dissipation (Max)	360W (Tc)	695W (Tc)	625W (Tc)	625W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Supplier Device Package	TO-247AD (IXFH)	TO-247AD (IXFH)	TO-247-3	TO-247-3
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	Not Applicable	Not Applicable

Engineering Selection Recommendations

IXFH32N48Q is classified as obsolete, which mandates the selection of replacement parts for ongoing or new designs. The listed substitutes—IXFH34N50P3 (IXYS), FDH45N50F-F133 (onsemi), and FDH50N50-F133 (onsemi)—hold active product status and are compliant with RoHS3 and REACH where noted. Each substitute features through-hole mounting and TO-247-3 package compatibility; all are rated for equivalent or higher voltage and continuous drain current parameters. Moisture Sensitivity Level for IXYS substitutes matches unlimited rating, while onsemi substitutes specify Not Applicable.

Frequently Asked Questions (FAQ)

Q: What key electrical parameters must match for substitution in N-Channel MOSFETs?
A: Substitute devices must match or exceed Drain to Source Voltage (Vdss), Continuous Drain Current (Id), and share N-Channel MOSFET technology. Rds On (Max), gate charge, and input capacitance differences must be considered within application needs.

Q: Are TO-247AD and TO-247-3 mechanically interchangeable?
A: All substitute listings specify TO-247-3 package and through-hole mounting, aligning with the original's mechanical format. OEM-specific package designations (such as TO-247AD) should be compared for hole positioning and overall dimensions before final design commitment.

Q: Is RoHS and REACH compliance noted for all substitute parts?
A: IXFH34N50P3, FDH45N50F-F133, and FDH50N50-F133 list RoHS3 compliance and REACH unaffected status in the provided data.

Q: Why is product status (Active/Obsolete) relevant for substitution?
A: Only actively produced and stocked components are suitable for designs requiring ongoing availability or support.

Q: Can these substitutes be used in environments requiring high moisture resistance?
A: IXYS substitute parts list Moisture Sensitivity Level 1 (Unlimited), indicating resistance to moisture-induced damage under standard handling. onsemi part MSL status is Not Applicable, as provided.

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