IXFH32N48 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH32N48 is an N-Channel 480V 32A through-hole MOSFET manufactured by IXYS in the HiPerFET™ series. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. The part is housed in a TO-247AD package and rated for 360W maximum power dissipation at case temperature.

Due to its obsolete status, alternative N-Channel MOSFETs with compatible electrical and mechanical characteristics are required for new designs and component replacement in existing applications.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	480	V
Continuous Drain Current (Id) @ 25°C	32	A
Rds On (Max) @ Id, Vgs	130 mOhm @ 15A, 10V	—
Gate Charge (Qg) (Max) @ Vgs	300 nC @ 10V	—
Power Dissipation (Max)	360	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-247-3	—

Substitute Part Grouping Explanation

Substitution of the IXFH32N48 is determined by the following critical parameters:

Electrical Compatibility Criteria:

FET Type: N-Channel (required match)
Drain to Source Voltage (Vdss): Minimum 480V (equal or higher acceptable)
Continuous Drain Current (Id): Minimum 32A (equal or higher acceptable)
Operating Temperature Range: -55°C to 150°C (required match)

Mechanical Compatibility Criteria:

Mounting Type: Through Hole (required match)
Package: TO-247-3 or TO-247AD (compatible footprints)

Substitute Classification:

Direct Manufacturer Substitute: IXFH34N50P3 (IXYS HiPerFET™ series) meets all electrical and mechanical requirements with enhanced ratings (500V, 34A) and maintains the same manufacturer lineage and series designation.

Similar Manufacturer Substitutes: FDH45N50F-F133 and FDH50N50-F133 (onsemi UniFET™ series) provide equivalent or superior electrical performance with compatible TO-247-3 packaging. Both devices exceed the minimum voltage and current requirements of the IXFH32N48.

Parameter Comparison

Parameter	IXFH32N48	IXFH34N50P3	FDH45N50F-F133	FDH50N50-F133
Manufacturer	IXYS	IXYS	onsemi	onsemi
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	480	500	500	500
Id @ 25°C (A)	32	34	45	48
Rds On (Max) @ Id, Vgs (mOhm)	130 @ 15A, 10V	170 @ 17A, 10V	120 @ 22.5A, 10V	105 @ 24A, 10V
Gate Charge (Qg) @ 10V (nC)	300	60	137	137
Power Dissipation (Max) (W)	360	695	625	625
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IXFH34N50P3 (Direct Substitute): This part is the primary substitute for the IXFH32N48. It is manufactured by IXYS within the same HiPerFET™ series and maintains design continuity. The IXFH34N50P3 is active in production status and ROHS3 compliant. It provides higher voltage rating (500V vs. 480V) and increased current capacity (34A vs. 32A), making it suitable for direct replacement in applications where the original part is no longer available. The enhanced power dissipation rating (695W vs. 360W) provides additional thermal margin.

FDH45N50F-F133 (Similar Substitute): This onsemi UniFET™ device offers superior electrical performance with 45A continuous drain current and lower on-resistance (120 mOhm vs. 130 mOhm). It is active in production and ROHS3 compliant. The higher current rating and improved thermal characteristics (625W power dissipation) make this suitable for applications requiring enhanced performance margins. Gate charge is reduced to 137 nC, improving switching efficiency.

FDH50N50-F133 (Similar Substitute): This onsemi UniFET™ device provides the highest current capacity (48A) and lowest on-resistance (105 mOhm) among the substitutes. It is active in production and ROHS3 compliant. This part is recommended for applications where maximum current handling and minimal conduction losses are critical design parameters. Power dissipation rating of 625W provides thermal headroom.

All substitute parts maintain the through-hole TO-247-3 package format, ensuring mechanical compatibility with existing PCB layouts.

Frequently Asked Questions (FAQ)

Q: Can the IXFH34N50P3 be used as a direct replacement for the IXFH32N48?

A: Yes. The IXFH34N50P3 meets all electrical and mechanical compatibility requirements. It provides equal or superior performance across all critical parameters: N-Channel topology, 500V Vdss (exceeds 480V requirement), 34A continuous current (exceeds 32A requirement), compatible TO-247-3 package, and identical operating temperature range (-55°C to 150°C). The part is active in production and ROHS3 compliant.

Q: What are the key differences between the IXFH34N50P3 and the onsemi substitutes?

A: The IXFH34N50P3 is manufactured by IXYS and belongs to the HiPerFET™ series, maintaining the original design lineage. The FDH45N50F-F133 and FDH50N50-F133 are manufactured by onsemi and belong to the UniFET™ series. All three devices are compatible with the IXFH32N48 footprint and electrical requirements. The onsemi devices offer higher current ratings (45A and 48A respectively) and lower on-resistance values, providing enhanced performance for high-current applications.

Q: Are there any package compatibility concerns when substituting these parts?

A: No. All substitute parts use the TO-247-3 package, which is mechanically and electrically compatible with the original IXFH32N48 TO-247-3 package. Pin assignments and thermal characteristics are equivalent, allowing direct PCB mounting without layout modifications.

Q: What is the significance of the gate charge difference between these devices?

A: Gate charge (Qg) affects switching speed and driver circuit requirements. The IXFH32N48 has a gate charge of 300 nC at 10V. The IXFH34N50P3 has significantly lower gate charge (60 nC), enabling faster switching and reduced driver power dissipation. The onsemi devices have intermediate gate charge values (137 nC). Lower gate charge generally improves switching efficiency but does not affect DC operating characteristics or thermal performance.

Q: Are all substitute parts RoHS compliant?

A: Yes. The IXFH34N50P3, FDH45N50F-F133, and FDH50N50-F133 are all ROHS3 compliant. The original IXFH32N48 RoHS status was not specified in the available data.

Q: Which substitute should be selected for maximum thermal performance?

A: The IXFH34N50P3 offers the highest power dissipation rating at 695W, followed by the onsemi devices at 625W each. For applications requiring maximum thermal margin, the IXFH34N50P3 is the optimal choice. However, the lower on-resistance values of the onsemi devices (105-120 mOhm vs. 170 mOhm) result in reduced conduction losses, which also contributes to improved thermal performance in high-current applications.

Q: Can these parts be used interchangeably in existing designs?

A: Yes, within the electrical operating parameters of the original design. All substitute parts exceed the minimum voltage (480V) and current (32A) requirements of the IXFH32N48. However, circuit designers should verify that the enhanced electrical characteristics (higher current capacity, lower on-resistance, different gate charge) do not introduce unintended effects in the specific application. The TO-247-3 package compatibility ensures mechanical interchangeability without PCB modifications.

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