IXFH30N85X Equivalent & Substitute Parts

Part Overview

The IXFH30N85X is an N-Channel MOSFET manufactured by IXYS, rated for 850V drain-to-source voltage with 30A continuous drain current at 25°C. This device operates within the HiPerFET™ Ultra X series and is housed in a TO-247 (IXTH) through-hole package. The part is Active in product status with 834 units currently in stock.

Substitute parts become necessary when the primary component experiences extended lead times, inventory constraints, or when application requirements permit operation at higher voltage ratings or alternative semiconductor technologies. The substitute parts listed below maintain N-Channel FET topology and through-hole mounting compatibility while offering different electrical characteristics suited to specific application demands.

Substiute Parts

IXFH30N85X

IXYSIn Stock: 928IXFH30N85X Datasheet

Current PartRFQ

SCT20N120

STMicroelectronicsIn Stock: 3863SCT20N120 Datasheet

SimilarRFQ

SCT3160KLGC11

Rohm SemiconductorIn Stock: 4284SCT3160KLGC11 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH30N85X is determined by the following criteria:

Mandatory Compatibility Parameters:

• FET Type: N-Channel topology required
• Mounting Type: Through Hole configuration required
• Package / Case: TO-247-3 form factor required
• RoHS Status: ROHS3 Compliant required
• Moisture Sensitivity Level: MSL 1 (Unlimited) required

Electrical Performance Considerations: Substitute parts must satisfy application-specific requirements for drain-to-source voltage, continuous drain current, on-state resistance, and power dissipation. The IXFH30N85X operates at 850V with 30A continuous current. Substitute devices may operate at higher voltage ratings (1200V) or lower current ratings (20A, 17A) depending on application tolerance. Gate charge, input capacitance, and threshold voltage variations affect switching characteristics and gate drive requirements.

Technology Variants: The substitute parts listed employ SiCFET (Silicon Carbide) technology, which differs from the MOSFET (Metal Oxide) technology of the primary part. SiCFET devices offer enhanced thermal performance and higher temperature operation but require different gate drive voltage specifications.

Parameter Comparison

Engineering Selection Recommendations

IXFH30N85X (Primary Part) The IXFH30N85X remains the optimal selection for applications requiring 850V operation with 30A continuous current capacity. This MOSFET technology device delivers 695W maximum power dissipation and operates across the -55°C to 150°C temperature range. All parts maintain Active product status with ROHS3 compliance and MSL 1 rating, ensuring regulatory conformance and unlimited moisture sensitivity handling.

SCT20N120 (STMicroelectronics Substitute) The SCT20N120 is suitable for applications where 1200V voltage rating provides design margin above the 850V requirement. This SiCFET device operates at 20A continuous current, representing a 33% reduction from the primary part's 30A rating. The 175W power dissipation is significantly lower than the primary part. Extended temperature operation to 200°C and reduced gate charge (45 nC versus 68 nC) support high-frequency switching applications. Gate drive voltage requirement increases to 20V maximum. This substitute accommodates applications with lower current demands and higher voltage headroom.

SCT3160KLGC11 (Rohm Semiconductor Substitute) The SCT3160KLGC11 operates at 1200V with 17A continuous current, representing a 43% reduction from the primary part's 30A rating. This SiCFET device delivers 103W maximum power dissipation with the lowest gate charge (42 nC) among all listed parts. Operating temperature extends to 175°C. Gate drive voltage requirement is 18V maximum. This substitute is appropriate for applications with significantly reduced current requirements and where minimal gate charge facilitates rapid switching transitions.

All substitute parts maintain through-hole TO-247-3 package compatibility, ROHS3 compliance, and MSL 1 rating, ensuring direct mechanical and regulatory compatibility with the primary part.

Frequently Asked Questions (FAQ)

Q: Can the SCT20N120 or SCT3160KLGC11 directly replace the IXFH30N85X in all applications?

A: Direct replacement depends on application current and voltage requirements. Both substitutes operate at 1200V, which exceeds the primary part's 850V rating. However, the SCT20N120 provides only 20A continuous current and the SCT3160KLGC11 provides only 17A continuous current, compared to the primary part's 30A rating. Applications requiring the full 30A continuous current cannot use these substitutes. Applications operating below 20A or 17A respectively, with voltage requirements at or below 1200V, can accommodate these substitutes.

Q: What are the gate drive voltage differences between these parts?

A: The IXFH30N85X requires 10V gate drive voltage for maximum on-state resistance specification. The SCT20N120 requires 20V gate drive voltage, and the SCT3160KLGC11 requires 18V gate drive voltage. Gate drive circuits must be adjusted to accommodate these higher voltage requirements when substituting SiCFET devices for the MOSFET primary part.

Q: How do the power dissipation ratings compare?

A: The IXFH30N85X dissipates 695W maximum at the case temperature. The SCT20N120 dissipates 175W maximum, and the SCT3160KLGC11 dissipates 103W maximum. These lower power dissipation ratings reflect the reduced current ratings of the substitute parts. Thermal management requirements differ significantly between the primary part and substitutes.

Q: Are all parts compatible with the same PCB layout and thermal management design?

A: All three parts use the TO-247-3 package and through-hole mounting, providing mechanical compatibility. However, thermal management design must account for the different power dissipation levels. The primary part's 695W dissipation requires more robust thermal design than the substitute parts' lower dissipation ratings.

Q: What is the difference between MOSFET and SiCFET technology in these parts?

A: The IXFH30N85X uses MOSFET (Metal Oxide) technology, while the SCT20N120 and SCT3160KLGC11 use SiCFET (Silicon Carbide) technology. SiCFET devices offer higher temperature operation capability and different electrical characteristics, including lower gate charge and different on-state resistance behavior. Gate drive voltage requirements differ between technologies.

Q: Do all parts meet the same regulatory and compliance standards?

A: Yes. All three parts are ROHS3 compliant, carry MSL 1 (Unlimited) moisture sensitivity rating, maintain Active product status, and share the same ECCN (EAR99) and HTSUS (8541.29.0095) classifications. Regulatory and compliance requirements are identical across all parts.

Q: What inventory availability exists for these parts?

A: The IXFH30N85X has 834 units in stock. The SCT20N120 has 3816 units in stock. The SCT3160KLGC11 has 4200 units in stock. Substitute parts offer significantly higher inventory availability.