IXFH30N60P N-Channel 600V 30A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH30N60P is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage and 30A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a TO-247AD through-hole package. The part is Active in product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible mechanical packaging and thermal characteristics. The IXFH30N60P operates at 500W maximum power dissipation; substitute devices must satisfy application requirements within their respective power ratings and voltage/current specifications.

Substiute Parts

IXFH30N60P

IXYSIn Stock: 2027IXFH30N60P Datasheet

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SPW17N80C3FKSA1

Infineon TechnologiesIn Stock: 9925SPW17N80C3FKSA1 Datasheet

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STW18N60M2

STMicroelectronicsIn Stock: 1362STW18N60M2 Datasheet

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STW18N65M5

STMicroelectronicsIn Stock: 1828STW18N65M5 Datasheet

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STW18NM60N

STMicroelectronicsIn Stock: 1804STW18NM60N Datasheet

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STW20NM60

STMicroelectronicsIn Stock: 5023STW20NM60 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following criteria:

Voltage Rating Compatibility: Substitute devices must have Vdss equal to or greater than 600V. Devices rated below 600V are not suitable for direct substitution in applications requiring the full 600V rating.

Current Rating Compatibility: Substitute devices must support continuous drain current sufficient for the application. The IXFH30N60P provides 30A; lower-rated devices may be used only in applications requiring reduced current capacity.

Package Compatibility: All substitute parts must use TO-247-3 through-hole packaging to ensure mechanical and thermal interface compatibility.

Thermal Performance: Substitute devices must operate within the -55°C to 150°C temperature range. Power dissipation ratings vary by device; application thermal design must account for the specific substitute part's power rating.

Electrical Characteristics: Gate charge, threshold voltage, and on-state resistance are secondary selection criteria. Devices with lower gate charge enable faster switching; lower Rds On reduces conduction losses.

Compliance Status: All substitute parts must maintain RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Parameter Comparison

Engineering Selection Recommendations

SPW17N80C3FKSA1 (Infineon CoolMOS™): This device provides 800V rating, exceeding the 600V requirement. Continuous drain current is 17A, which is 57% of the IXFH30N60P rating. Power dissipation is 227W, significantly lower than the main part. This substitute is suitable for applications where 600V operation is required but current demand does not exceed 17A and thermal dissipation is limited to 227W. The higher voltage rating provides design margin for transient overvoltage conditions. All compliance certifications match the main part.

STW18N60M2 (STMicroelectronics MDmesh™ II Plus): This device maintains 600V rating with 13A continuous current and 110W power dissipation. Gate charge is significantly lower at 21.5 nC, enabling faster switching. This substitute is applicable only to applications requiring 13A or less. The reduced power dissipation rating requires thermal design verification. Operating temperature range is -55°C to 150°C, matching the main part. RoHS3 and MSL 1 compliance are maintained.

STW18N65M5 (STMicroelectronics MDmesh™ V): This device provides 650V rating with 15A continuous current and 110W power dissipation. Gate charge is 31 nC. Operating temperature specification lists only 150°C maximum; the lower temperature limit is not specified in provided data. This substitute is suitable for applications requiring 15A or less. Thermal design must account for 110W maximum dissipation. RoHS3 and MSL 1 compliance are maintained.

STW18NM60N (STMicroelectronics MDmesh™ II): This device maintains 600V rating with 13A continuous current and 110W power dissipation. Gate charge is 35 nC. Operating temperature range is -55°C to 150°C, matching the main part. This substitute is applicable only to applications requiring 13A or less. RoHS3 and MSL 1 compliance are maintained.

STW20NM60 (STMicroelectronics MDmesh™): This device maintains 600V rating with 20A continuous current and 192W power dissipation. This substitute provides the closest current capability to the main part at 67% of the IXFH30N60P rating. Gate charge is 54 nC. Operating temperature specification lists only 150°C maximum; the lower temperature limit is not specified in provided data. This substitute is suitable for applications requiring 20A or less. RoHS3 and MSL 1 compliance are maintained.

All substitute parts are Active in product status with confirmed inventory availability. Selection must be based on specific application current and power dissipation requirements.

Frequently Asked Questions (FAQ)

Q: Can the SPW17N80C3FKSA1 be used as a direct replacement for the IXFH30N60P?

A: The SPW17N80C3FKSA1 is not a direct replacement due to reduced current rating (17A versus 30A) and lower power dissipation (227W versus 500W). It is suitable only for applications where current demand does not exceed 17A and thermal dissipation is within 227W. The higher 800V rating does not compensate for reduced current capacity.

Q: Why do the STMicroelectronics MDmesh™ devices have lower power dissipation ratings?

A: Power dissipation is a function of die size, thermal design, and package thermal resistance. The STMicroelectronics devices listed have lower continuous current ratings (13A to 20A) compared to the IXFH30N60P (30A), resulting in proportionally lower power dissipation specifications. Application thermal design must account for the specific substitute device's power rating.

Q: Are all substitute parts compatible with the TO-247-3 package footprint?

A: Yes. All substitute parts listed use TO-247-3 through-hole packaging, ensuring mechanical and thermal interface compatibility with the IXFH30N60P footprint.

Q: What is the significance of gate charge differences between the main part and substitutes?

A: Gate charge (Qg) determines the energy required to switch the device and influences switching speed. The IXFH30N60P has 82 nC gate charge. Substitutes with lower gate charge (STW18N60M2 at 21.5 nC) enable faster switching and reduced driver power consumption. Substitutes with higher gate charge (SPW17N80C3FKSA1 at 177 nC) require more driver energy and may reduce switching frequency capability.

Q: Can a substitute with lower continuous current rating be used in a 30A application?

A: No. Continuous drain current rating must meet or exceed application requirements. Using a device rated below the required current will result in thermal stress, reduced device lifetime, and potential failure. Current derating must be applied based on the specific substitute device's rating.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1), matching the IXFH30N60P compliance status.

Q: What is the impact of Vdss rating differences on substitution?

A: Drain-to-source voltage rating must equal or exceed the application voltage. The IXFH30N60P is rated 600V. The SPW17N80C3FKSA1 at 800V provides additional voltage margin for transient overvoltage protection. Devices rated below 600V (not present in this substitute list) are not suitable for 600V applications.

Q: How should operating temperature range differences be evaluated?

A: The IXFH30N60P operates from -55°C to 150°C. Some substitute parts (STW18N65M5 and STW20NM60) specify only 150°C maximum in provided data. Applications requiring operation below 0°C should use substitutes with confirmed -55°C minimum rating (SPW17N80C3FKSA1, STW18N60M2, STW18NM60N).