IXFH30N50Q Equivalent & Substitute Parts

Part Overview

The IXFH30N50Q is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 30A continuous drain current at 25°C. This device is packaged in a TO-247AD through-hole configuration and is part of the HiPerFET™ series. The IXFH30N50Q is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing system support and new design alternatives.

Substitution becomes necessary when the original part reaches end-of-life status, inventory depletion occurs, or design requirements shift toward active product lines. The substitute parts listed maintain electrical compatibility within defined parameter ranges while offering improved availability and, in some cases, enhanced performance characteristics.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Current - Continuous Drain (Id) @ 25°C	30	A (Tc)
Rds On (Max) @ Id, Vgs	160 mOhm @ 15A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	300	nC @ 10V
Power Dissipation (Max)	360	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	TO-247AD
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	5700	pF @ 25V

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH30N50Q is determined by the following critical parameters:

Primary Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 500V
Current - Continuous Drain (Id) @ 25°C: Must equal or exceed 30A
Mounting Type: Must be through-hole TO-247 package family
FET Type: Must be N-Channel MOSFET technology

Secondary Compatibility Criteria:

Gate Charge (Qg): Lower values indicate improved switching performance
Rds On (Max): Lower values reduce conduction losses
Power Dissipation (Max): Must support thermal requirements of the application
Operating Temperature Range: Must encompass application operating conditions
Vgs (Max): Must accommodate gate drive voltage requirements

The substitute parts STW26NM50 and STW28NM50N meet the primary compatibility criteria. Both devices maintain 500V Vdss rating and through-hole TO-247-3 packaging. STW26NM50 matches the 30A continuous drain current specification, while STW28NM50N operates at 21A continuous drain current, representing a reduced current capability.

Parameter Comparison

Parameter	IXFH30N50Q	STW26NM50	STW28NM50N	Unit
Manufacturer	IXYS	STMicroelectronics	STMicroelectronics	—
Drain to Source Voltage (Vdss)	500	500	500	V
Current - Continuous Drain (Id) @ 25°C	30	30	21	A (Tc)
Rds On (Max) @ Id, Vgs	160 mOhm @ 15A, 10V	120 mOhm @ 13A, 10V	158 mOhm @ 10.5A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	300	106	50	nC @ 10V
Vgs (Max)	±20	±30	±25	V
Input Capacitance (Ciss) (Max) @ Vds	5700	3000	1735	pF @ 25V
Power Dissipation (Max)	360	313	150	W (Tc)
Operating Temperature (Max)	150	150	150	°C (TJ)
Package / Case	TO-247-3	TO-247-3	TO-247-3	—
Product Status	Obsolete	Not For New Designs	Active	—

Engineering Selection Recommendations

STW26NM50 (STMicroelectronics):

The STW26NM50 provides direct electrical equivalence to the IXFH30N50Q with matched 500V Vdss and 30A continuous drain current ratings. This device demonstrates superior performance characteristics, including reduced gate charge (106 nC versus 300 nC) and lower on-resistance (120 mOhm versus 160 mOhm). The STW26NM50 is classified as "Not For New Designs," indicating limited long-term availability. This part is suitable for legacy system maintenance and repair applications where direct replacement is required. The device carries RoHS3 compliance and REACH unaffected status.

STW28NM50N (STMicroelectronics):

The STW28NM50N is an active product offering from STMicroelectronics within the MDmesh™ II series. This device maintains 500V Vdss compatibility but operates at a reduced continuous drain current of 21A, representing a 30% reduction from the IXFH30N50Q specification. The STW28NM50N exhibits superior switching characteristics with significantly lower gate charge (50 nC) and input capacitance (1735 pF), making it advantageous for high-frequency switching applications. Power dissipation capability is reduced to 150W. This part is recommended for new designs requiring 500V N-Channel MOSFET functionality where the 21A current rating is sufficient. The device carries RoHS3 compliance and REACH unaffected status.

Selection Basis:

Legacy System Support: Use STW26NM50 for direct replacement in existing IXFH30N50Q applications
New Design Implementation: Use STW28NM50N for active product line support and improved switching performance, provided 21A current rating meets application requirements
Compliance Requirements: Both substitute parts satisfy RoHS3 and REACH regulatory requirements

Frequently Asked Questions (FAQ)

Q: Can STW26NM50 be used as a direct replacement for IXFH30N50Q?

A: Yes. Both devices share identical 500V Vdss and 30A continuous drain current ratings. The TO-247-3 package is mechanically and electrically compatible with TO-247AD. The STW26NM50 exhibits improved performance with lower gate charge and on-resistance. Verify gate drive circuit compatibility with the ±30V Vgs (Max) specification of the STW26NM50.

Q: What are the limitations of STW28NM50N as a substitute?

A: The STW28NM50N operates at 21A continuous drain current, which is 30% lower than the IXFH30N50Q specification of 30A. Power dissipation capability is reduced to 150W compared to 360W. This device is suitable only for applications where the reduced current and power ratings are acceptable. Verify application current requirements before selection.

Q: Are the TO-247-3 and TO-247AD packages interchangeable?

A: Yes. Both packages are through-hole TO-247 variants with identical pin configurations and mechanical footprints. The primary difference is internal die design and thermal characteristics. PCB layouts designed for TO-247AD accept TO-247-3 devices without modification.

Q: What is the significance of product status classifications?

A: IXFH30N50Q is classified as "Obsolete," indicating discontinued manufacturing and limited inventory availability. STW26NM50 is "Not For New Designs," indicating phase-out status with restricted future availability. STW28NM50N is "Active," indicating current production and long-term availability. For new designs, STW28NM50N is the preferred selection when current rating requirements permit.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXFH30N50Q requires 300 nC, while STW26NM50 requires 106 nC and STW28NM50N requires 50 nC. Lower gate charge reduces switching losses and allows faster switching speeds. Verify gate drive circuit current capability when substituting parts with significantly different gate charge specifications.

Q: Are there thermal management considerations when substituting these parts?

A: Yes. The IXFH30N50Q dissipates up to 360W, STW26NM50 dissipates up to 313W, and STW28NM50N dissipates up to 150W. Applications designed for the 360W dissipation of the IXFH30N50Q may require thermal design verification when using STW28NM50N due to its reduced power rating. Ensure heatsink and thermal interface materials remain adequate for the selected device.

Q: What compliance certifications apply to these devices?

A: All three devices carry ECCN EAR99 and HTSUS 8541.29.0095 classifications. STW26NM50 and STW28NM50N carry RoHS3 compliance and REACH unaffected status. The IXFH30N50Q carries MSL 1 (Unlimited) moisture sensitivity rating, as do both substitute parts.

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