IXFH30N50P N-Channel 500V 30A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH30N50P is an N-Channel 500V 30A through-hole MOSFET manufactured by IXYS in the HiPerFET™ series. This device is rated for 460W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently Active in product status and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified based on matching or exceeding the critical electrical parameters: drain-source voltage (Vdss), continuous drain current (Id), on-state resistance (Rds On), and gate charge characteristics. Substitutes enable design flexibility when the primary part is unavailable or when application requirements allow for alternative specifications within acceptable operating margins.

Substiute Parts

IXFH30N50P
IXYSIn Stock: 1960IXFH30N50P Datasheet
IXFH30N50P
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APT30F50B
Microchip TechnologyIn Stock: 1133APT30F50B Datasheet
APT30F50B
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APT5017BVRG
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IRFP31N50LPBF
Vishay SiliconixIn Stock: 6879IRFP31N50LPBF Datasheet
IRFP31N50LPBF
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STW19NM50N
STMicroelectronicsIn Stock: 2492STW19NM50N Datasheet
STW19NM50N
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STW26NM60N
STMicroelectronicsIn Stock: 65181STW26NM60N Datasheet
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 30 A (Tc)
On-State Resistance (Rds On) @ 15A, 10V 200 mOhm
Gate Charge (Qg) @ 10V 70 nC
Input Capacitance (Ciss) @ 25V 4150 pF
Power Dissipation (Max) 460 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole -
Package TO-247-3 -

Substitute Part Grouping Explanation

Substitution logic for the IXFH30N50P is based on the following critical parameters:

Primary Substitution Criteria:

  • Drain-Source Voltage (Vdss): 500V minimum (equal or higher voltage rating required)
  • Continuous Drain Current (Id): 30A minimum at 25°C (equal or higher current rating required)
  • Mounting Type: Through Hole
  • Package: TO-247 family (TO-247-3, TO-247AD, TO-247AC compatible)
  • Technology: N-Channel MOSFET (Metal Oxide)
  • RoHS Compliance: ROHS3 Compliant
  • Moisture Sensitivity: MSL 1 (Unlimited)

Secondary Compatibility Parameters:

  • On-State Resistance (Rds On): Lower values indicate improved performance; substitutes with Rds On ≤ 200mOhm at rated conditions are direct equivalents
  • Gate Charge (Qg): Lower values reduce switching losses; substitutes with Qg ≤ 70nC are preferred
  • Input Capacitance (Ciss): Lower values improve switching speed; substitutes with Ciss ≤ 4150pF are preferred
  • Power Dissipation: Substitutes with equal or higher power rating maintain thermal performance

Parts meeting all primary criteria are classified as direct substitutes. Parts exceeding voltage or current ratings while maintaining compatible packages are classified as upgrades. Parts with reduced current ratings or voltage ratings below 500V are classified as limited substitutes and require application-specific verification.

Parameter Comparison

Parameter IXFH30N50P APT30F50B APT5017BVRG IRFP31N50LPBF STW19NM50N STW26NM60N
Manufacturer IXYS Microchip Technology Microchip Technology Vishay Siliconix STMicroelectronics STMicroelectronics
Vdss (V) 500 500 500 500 500 600
Id @ 25°C (A) 30 30 30 31 14 20
Rds On (mOhm) 200 @ 15A, 10V 190 @ 14A, 10V 170 @ 500mA, 10V 180 @ 19A, 10V 250 @ 7A, 10V 165 @ 10A, 10V
Qg @ 10V (nC) 70 115 300 210 34 60
Ciss @ 25V (pF) 4150 4525 5280 5000 1000 1800
Power Dissipation (W) 460 415 Not specified 460 110 140
Operating Temp (°C) -55 to 150 -55 to 150 Not specified -55 to 150 150 150
Package TO-247AD TO-247 [B] TO-247 [B] TO-247AC TO-247-3 TO-247-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Direct Substitutes (500V, 30A+ Rating):

APT30F50B and IRFP31N50LPBF are direct substitutes for the IXFH30N50P. Both devices maintain the 500V drain-source voltage rating, meet or exceed the 30A continuous drain current specification, and are housed in compatible TO-247 packages. APT30F50B offers slightly lower on-state resistance (190mOhm vs. 200mOhm) and reduced power dissipation (415W vs. 460W). IRFP31N50LPBF provides 31A continuous current capability with 180mOhm on-state resistance and equivalent 460W power dissipation. Both parts are Active in product status, RoHS3 compliant, and MSL 1 rated.

APT5017BVRG is a 500V, 30A rated device from Microchip Technology with superior on-state resistance (170mOhm) but elevated gate charge (300nC vs. 70nC) and input capacitance (5280pF vs. 4150pF). This part is suitable for applications where lower conduction losses outweigh increased switching losses. Product status and compliance certifications are equivalent to the primary part.

Limited Substitutes (Reduced Current or Elevated Voltage):

STW19NM50N is a 500V, 14A rated device with reduced current capability (14A vs. 30A). This part is not suitable as a direct substitute for applications requiring full 30A operation. However, it is applicable in designs where current requirements do not exceed 14A and lower gate charge (34nC) is beneficial for switching performance.

STW26NM60N is a 600V, 20A rated device with elevated voltage rating and reduced current capability (20A vs. 30A). The higher voltage rating provides additional design margin but the reduced current rating (20A vs. 30A) limits its use to applications with lower current demands. This part is not a direct substitute for full-specification IXFH30N50P applications.

Compliance and Certification:

All identified substitutes are Active in product status, RoHS3 compliant, and MSL 1 rated. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095. Substitution does not introduce compliance or regulatory concerns.

Frequently Asked Questions (FAQ)

Q: Can APT30F50B replace IXFH30N50P in all applications?

A: APT30F50B is a direct substitute for IXFH30N50P. Both devices share identical 500V voltage rating and 30A current rating. The APT30F50B features slightly lower on-state resistance (190mOhm vs. 200mOhm) and reduced power dissipation (415W vs. 460W), making it suitable for equivalent or improved thermal performance. Package compatibility is confirmed across TO-247 variants (TO-247AD vs. TO-247 [B]). Pinout alignment must be verified for the specific application circuit.

Q: What is the difference between IRFP31N50LPBF and IXFH30N50P?

A: IRFP31N50LPBF is manufactured by Vishay Siliconix and provides 31A continuous drain current versus the IXFH30N50P's 30A rating. Both devices are rated for 500V drain-source voltage and 460W power dissipation. IRFP31N50LPBF exhibits lower on-state resistance (180mOhm vs. 200mOhm) and higher gate charge (210nC vs. 70nC). The higher gate charge results in increased switching losses but lower conduction losses. Both parts use compatible TO-247 packages (TO-247AC vs. TO-247AD).

Q: Why is STW19NM50N listed as a substitute if it only provides 14A?

A: STW19NM50N is listed as a limited substitute applicable only to designs where continuous drain current requirements do not exceed 14A. This part maintains the 500V voltage rating and offers superior switching characteristics with 34nC gate charge and 1000pF input capacitance. It is not suitable for applications requiring the full 30A capability of the IXFH30N50P.

Q: Can STW26NM60N be used instead of IXFH30N50P?

A: STW26NM60N is not a direct substitute. While it provides a higher 600V voltage rating, it is rated for only 20A continuous drain current, which is below the IXFH30N50P's 30A specification. This part is applicable only in designs where current requirements do not exceed 20A and the elevated voltage rating provides design margin. Use of this part in full 30A applications will result in thermal stress and potential device failure.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All identified substitute parts (APT30F50B, APT5017BVRG, IRFP31N50LPBF, STW19NM50N, and STW26NM60N) are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level. Substitution does not introduce RoHS compliance concerns.

Q: What is the significance of gate charge (Qg) differences between substitutes?

A: Gate charge determines the energy required to switch the MOSFET on and off. The IXFH30N50P has 70nC gate charge at 10V. APT30F50B (115nC) and IRFP31N50LPBF (210nC) have higher gate charge, requiring more switching energy and potentially increasing switching losses. APT5017BVRG (300nC) has significantly higher gate charge. STW19NM50N (34nC) and STW26NM60N (60nC) have lower gate charge, reducing switching losses. Selection depends on whether the application prioritizes conduction losses or switching losses.

Q: Are TO-247AD, TO-247 [B], and TO-247AC packages mechanically interchangeable?

A: All identified substitute parts use TO-247 family packages (TO-247-3, TO-247AD, TO-247AC, TO-247 [B]). These packages share identical pin spacing and mechanical dimensions, enabling direct board-level substitution. However, pinout verification is required to confirm gate, drain, and source terminal alignment for the specific application circuit. Consult device datasheets for exact pin assignments.

Q: What inventory levels are available for substitute parts?

A: Current inventory levels are as follows: IXFH30N50P (1864 pcs), APT30F50B (1096 pcs), APT5017BVRG (837 pcs), IRFP31N50LPBF (6841 pcs), STW19NM50N (2443 pcs), and STW26NM60N (65100 pcs). Inventory availability may change; verification with the supplier is recommended for production orders.

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