IXFH30N50 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH30N50 is an N-Channel 500V, 30A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-247AD through-hole package. This device is rated for 360W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and component procurement.

Substiute Parts

IXFH30N50
IXYSIn Stock: 1745IXFH30N50 Datasheet
IXFH30N50
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STW26NM50
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 500 V
Continuous Drain Current (Id) @ 25°C 30 A
Rds On (Max) @ 15A, 10V 160 mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA 4 V
Gate Charge (Qg) @ 10V 300 nC
Input Capacitance (Ciss) @ 25V 5700 pF
Power Dissipation (Max) 360 W
Operating Temperature Range -55 to 150 °C
Package Type TO-247AD
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the IXFH30N50 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): 500V or higher
  • Continuous Drain Current (Id): 30A or higher at 25°C
  • Rds On (Max): 160mOhm or lower at specified gate voltage
  • Gate Threshold Voltage (Vgs(th)): 4V to 5V range
  • Package Type: TO-247 series (TO-247AD, TO-247AC, or TO-247-3)
  • Mounting Type: Through Hole
  • Operating Temperature: -55°C to 150°C minimum

Substitute Parts Identified:

Group 1 – Direct Voltage/Current Match (500V, 30A):

  • STW26NM50 (STMicroelectronics): 500V, 30A, 120mOhm Rds On, TO-247-3

Group 2 – Lower Voltage Alternatives (400V):

  • IRFP360LCPBF (Vishay Siliconix): 400V, 23A, 200mOhm Rds On, TO-247AC
  • SIHG25N40D-GE3 (Vishay Siliconix): 400V, 25A, 170mOhm Rds On, TO-247AC

Group 3 – Higher Voltage Alternative (600V):

  • STW26NM60N (STMicroelectronics): 600V, 20A, 165mOhm Rds On, TO-247-3

Group 4 – Lower Current Alternative (500V, 21A):

  • STW28NM50N (STMicroelectronics): 500V, 21A, 158mOhm Rds On, TO-247-3

Parameter Comparison

Parameter IXFH30N50 STW26NM50 IRFP360LCPBF SIHG25N40D-GE3 STW26NM60N STW28NM50N
Vdss (V) 500 500 400 400 600 500
Id @ 25°C (A) 30 30 23 25 20 21
Rds On (Max) (mOhm) 160 120 200 170 165 158
Vgs(th) (V) 4 5 4 5 4 4
Gate Charge (nC) 300 106 110 88 60 50
Ciss (pF) 5700 3000 3400 1707 1800 1735
Power Dissipation (W) 360 313 280 278 140 150
Operating Temp (°C) -55 to 150 150 -55 to 150 -55 to 150 150 150
Package TO-247AD TO-247-3 TO-247AC TO-247AC TO-247-3 TO-247-3
Product Status Obsolete Not For New Designs Active Active Active Active
RoHS Compliance ROHS3 ROHS3 ROHS3 ROHS3 ROHS3

Engineering Selection Recommendations

For Direct Replacement (500V, 30A Requirement):

STW26NM50 provides the closest electrical match with 500V/30A ratings and improved Rds On performance (120mOhm vs. 160mOhm). However, this part carries a "Not For New Designs" status. For new designs requiring 500V/30A capability, this part is not recommended for long-term production use.

For Active Production (Recommended):

STW28NM50N (STMicroelectronics) is the preferred substitute for new designs. It maintains 500V voltage rating with 21A continuous current, carries active product status, and includes ROHS3 compliance. The reduced current rating (21A vs. 30A) requires circuit evaluation but offers superior gate charge characteristics (50nC vs. 300nC) and lower Rds On (158mOhm).

For Lower Voltage Applications (400V Maximum):

IRFP360LCPBF and SIHG25N40D-GE3 are suitable only for applications with maximum 400V drain-source voltage requirements. Both parts carry active status and ROHS3 compliance. SIHG25N40D-GE3 offers superior input capacitance (1707pF) and lower gate charge (88nC).

For Higher Voltage Applications (600V Requirement):

STW26NM60N accommodates 600V applications with 20A continuous current and active product status. This part is appropriate only when higher voltage headroom is required, as it reduces current capability to 20A.

Compliance Considerations:

All recommended active substitutes (STW28NM50N, IRFP360LCPBF, SIHG25N40D-GE3, STW26NM60N) comply with ROHS3 standards. The IXFH30N50 carries no specified RoHS status due to its obsolete classification.

Frequently Asked Questions (FAQ)

Q: Can STW26NM50 directly replace IXFH30N50 in existing designs?

A: STW26NM50 matches the electrical specifications (500V, 30A) and package type (TO-247-3). However, it carries "Not For New Designs" status. For existing production, electrical compatibility is confirmed. For new designs, STW28NM50N is the recommended active alternative.

Q: What is the primary difference between TO-247AD and TO-247AC packages?

A: Both are through-hole TO-247 variants with identical pin configurations and thermal characteristics. The suffix designates manufacturer-specific lead geometry. Mechanical compatibility is confirmed across all TO-247 variants (AD, AC, -3) for standard PCB footprints.

Q: Why does STW28NM50N have lower current (21A) than IXFH30N50 (30A)?

A: STW28NM50N is a different device within the MDmesh™ II series optimized for reduced gate charge and improved switching performance. The 21A rating reflects this design optimization. Circuit evaluation is required to confirm adequacy for 30A applications.

Q: Are IRFP360LCPBF and SIHG25N40D-GE3 suitable for 500V applications?

A: No. Both parts are rated for maximum 400V drain-source voltage. They are not suitable for circuits requiring 500V operation. Use only in applications with 400V or lower voltage requirements.

Q: What is the impact of lower gate charge in substitute parts?

A: Lower gate charge (50–110nC vs. 300nC) reduces gate drive power requirements and enables faster switching transitions. This generally improves efficiency and thermal performance. Gate driver circuits may require adjustment for optimal performance with lower charge values.

Q: Do all substitute parts require PCB layout modifications?

A: No. All substitute parts use standard TO-247 through-hole packages with identical pin spacing and thermal pad dimensions. Existing PCB layouts accommodate all listed substitutes without modification.

Q: Which substitute is recommended for new product designs?

A: STW28NM50N (STMicroelectronics) is the recommended choice for new designs. It carries active product status, ROHS3 compliance, maintains 500V rating, and offers superior switching characteristics. Circuit evaluation is required to confirm 21A current adequacy.

Q: Can higher voltage substitutes (STW26NM60N at 600V) be used in 500V applications?

A: Yes. Higher voltage-rated devices operate safely in lower voltage applications. STW26NM60N can be used in 500V circuits. However, the reduced current rating (20A vs. 30A) must be evaluated for circuit requirements.

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