IXFH28N50Q Equivalent & Substitute Parts

Part Overview

The IXFH28N50Q is an N-Channel MOSFET rated for 500V drain-to-source voltage with 28A continuous drain current at 25°C. Manufactured by IXYS, this device is housed in a TO-247AD through-hole package and is part of the HiPerFET™ series. The part is currently classified as obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning.

Substitute parts are necessary due to the obsolete status of the IXFH28N50Q. Active alternatives with compatible electrical and mechanical specifications enable system designers to maintain performance requirements while ensuring long-term component availability.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	28	A
On-State Resistance (Rds On) @ 14A, 10V	200	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	4.5	V
Gate Charge (Qg) @ 10V	94	nC
Input Capacitance (Ciss) @ 25V	3000	pF
Power Dissipation (Max)	375	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXFH28N50Q is determined by the following critical parameters:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): 500V minimum
Continuous Drain Current (Id): 28A or greater
Package Type: TO-247-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Criteria:

On-State Resistance (Rds On): Lower or equal values preferred for thermal performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: 375W or greater capacity

Substitute parts are grouped into two categories:

Direct Substitutes: Parts meeting or exceeding all primary criteria with Vdss = 500V and Id ≥ 28A.

Similar Substitutes: Parts with Vdss ≥ 500V and reduced current ratings (14A–20A) or elevated voltage ratings (600V), suitable for applications where the full 28A rating is not required or where higher voltage margin is beneficial.

Parameter Comparison

Parameter	IXFH28N50Q	IRFP32N50KPBF	STW19NM50N	STW26NM60N
Manufacturer	IXYS	Vishay Siliconix	STMicroelectronics	STMicroelectronics
Vdss (V)	500	500	500	600
Id @ 25°C (A)	28	32	14	20
Rds On (mOhm)	200 @ 14A, 10V	160 @ 32A, 10V	250 @ 7A, 10V	165 @ 10A, 10V
Qg (nC) @ 10V	94	190	34	60
Ciss (pF)	3000 @ 25V	5280 @ 25V	1000 @ 50V	1800 @ 50V
Power Dissipation (W)	375	460	110	140
Operating Temperature (°C)	-55 to 150	-55 to 150	—55 to 150	—55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active

Engineering Selection Recommendations

IRFP32N50KPBF (Vishay Siliconix)

The IRFP32N50KPBF is the primary direct substitute for the IXFH28N50Q. It maintains the 500V Vdss rating and exceeds the 28A current requirement with 32A continuous drain current. The device features improved on-state resistance (160 mOhm versus 200 mOhm) and higher power dissipation capacity (460W versus 375W). The IRFP32N50KPBF is RoHS3 compliant and REACH affected, with active product status ensuring long-term availability. The TO-247-3 package is mechanically compatible with the original design.

STW19NM50N (STMicroelectronics)

The STW19NM50N is a similar substitute suitable for applications where the full 28A rating is not required. Operating at 14A continuous drain current with 500V Vdss, this device offers significantly lower gate charge (34 nC versus 94 nC) and reduced input capacitance (1000 pF versus 3000 pF), resulting in lower switching losses. The STW19NM50N is RoHS3 compliant with active product status. This part is appropriate for lower-current designs or where switching frequency optimization is prioritized.

STW26NM60N (STMicroelectronics)

The STW26NM60N is a similar substitute offering elevated voltage rating (600V Vdss) with 20A continuous drain current. This device provides additional voltage margin for applications subject to transient overvoltage conditions. The 165 mOhm on-state resistance and 60 nC gate charge represent balanced performance characteristics. The STW26NM60N is RoHS3 compliant with active product status and extensive inventory availability (65,100 pieces).

All substitute parts are classified as active products with established supply chains, ensuring procurement reliability and design continuity beyond the obsolescence of the IXFH28N50Q.

Frequently Asked Questions (FAQ)

Q: Can the IRFP32N50KPBF directly replace the IXFH28N50Q without circuit modifications?

A: The IRFP32N50KPBF is mechanically and electrically compatible with the IXFH28N50Q. Both devices share identical Vdss (500V), operating temperature range (-55°C to 150°C), and TO-247-3 package configuration. The IRFP32N50KPBF exceeds the current rating (32A versus 28A) and provides superior on-state resistance and power dissipation capacity. No circuit modifications are required for direct substitution.

Q: What is the difference between direct and similar substitutes?

A: Direct substitutes maintain the same Vdss rating (500V) and meet or exceed the continuous drain current specification (28A). The IRFP32N50KPBF qualifies as a direct substitute. Similar substitutes include devices with either reduced current ratings (STW19NM50N at 14A) or elevated voltage ratings (STW26NM60N at 600V). Similar substitutes are appropriate when application requirements permit deviation from the original current or voltage specifications.

Q: Are all substitute parts RoHS compliant?

A: The IRFP32N50KPBF, STW19NM50N, and STW26NM60N are all RoHS3 compliant. The original IXFH28N50Q does not specify RoHS status. All substitute parts meet current environmental compliance standards.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXFH28N50Q specifies 94 nC at 10V. The IRFP32N50KPBF requires 190 nC, resulting in higher gate drive energy and potentially increased switching losses. The STW19NM50N requires only 34 nC, significantly reducing switching losses. Selection depends on gate drive circuit capability and switching frequency requirements.

Q: What is the significance of on-state resistance (Rds On) in substitution?

A: On-state resistance directly affects conduction losses and thermal performance. The IXFH28N50Q specifies 200 mOhm at 14A and 10V. The IRFP32N50KPBF provides 160 mOhm at 32A and 10V, reducing conduction losses. The STW26NM60N provides 165 mOhm at 10A and 10V. Lower Rds On values improve efficiency and reduce heat dissipation requirements.

Q: Can the STW26NM60N (600V) be used in a 500V application?

A: Yes. The STW26NM60N with 600V Vdss rating is suitable for 500V applications. The elevated voltage rating provides additional margin for transient overvoltage conditions. However, the reduced current rating (20A versus 28A) must be verified against application requirements. The higher voltage rating does not introduce compatibility issues in 500V designs.

Q: What inventory considerations apply to substitute selection?

A: The IRFP32N50KPBF has 7,245 pieces in stock. The STW19NM50N has 2,443 pieces available. The STW26NM60N has 65,100 pieces in stock, providing the highest inventory availability. For long-term production requirements, the STW26NM60N offers the most secure supply position.

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