IXFH26N60P N-Channel 600V 26A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH26N60P is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage and 26A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a TO-247AD through-hole package. The part is Active in product status and RoHS3 compliant.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, gate charge characteristics, and on-state resistance specifications. Substitutes must maintain compatibility with TO-247 package family mounting requirements and thermal operating ranges.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	26	A (Tc)
Rds On (Max) @ Id, Vgs	270	mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs	72	nC @ 10V
Power Dissipation (Max)	460	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
Vgs(th) (Max) @ Id	5	V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	4150	pF @ 25V

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH26N60P is determined by the following critical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 26A or greater at 25°C
Package Family: TO-247-3 compatible through-hole mounting
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance and REACH Unaffected status

Secondary Compatibility Factors:

Gate Charge (Qg): Lower values indicate faster switching; higher values acceptable if within thermal budget
On-State Resistance (Rds On): Lower values preferred for reduced power dissipation
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation Rating: Must support application thermal requirements

Substitute parts are grouped into two categories:

Category A - Direct Equivalents (600V, 26A+): Parts meeting or exceeding the 600V and 26A specifications with comparable gate charge and on-state resistance characteristics.

Category B - Functional Alternatives (600V, Lower Current or Higher Voltage): Parts with 600V rating but reduced current capability, or higher voltage ratings with comparable current, suitable for applications with reduced current demands or higher voltage headroom requirements.

Parameter Comparison

Parameter	IXFH26N60P	IRFP26N60LPBF	IRFP27N60KPBF	SPW16N50C3FKSA1	SPW17N80C3FKSA1	STW18N60M2
Manufacturer	IXYS	Vishay Siliconix	Vishay Siliconix	Infineon Technologies	Infineon Technologies	STMicroelectronics
Vdss (V)	600	600	600	560	800	600
Id @ 25°C (A)	26	26	27	16	17	13
Rds On (Max) (mOhm)	270 @ 500mA, 10V	250 @ 16A, 10V	220 @ 16A, 10V	280 @ 10A, 10V	290 @ 11A, 10V	280 @ 6.5A, 10V
Qg (Max) (nC)	72 @ 10V	180 @ 10V	180 @ 10V	66 @ 10V	177 @ 10V	21.5 @ 10V
Ciss (Max) (pF)	4150 @ 25V	5020 @ 25V	4660 @ 25V	1600 @ 25V	2320 @ 25V	791 @ 100V
Power Dissipation (Max) (W)	460	470	500	160	227	110
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247AD	TO-247AC	TO-247AC	PG-TO247-3-1	PG-TO247-3-1	TO-247-3
RoHS3 Status	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant
REACH Status	Unaffected	Unaffected	Unaffected	Unaffected	Unaffected	Unaffected

Engineering Selection Recommendations

IRFP26N60LPBF (Vishay Siliconix)

This part is a direct equivalent to the IXFH26N60P, matching the 600V and 26A specifications. The IRFP26N60LPBF exhibits lower on-state resistance (250 mOhm vs. 270 mOhm) and higher power dissipation capability (470W vs. 460W). Gate charge is higher at 180 nC, requiring increased gate drive energy. All regulatory certifications (RoHS3, REACH Unaffected) align with the primary part. This substitute is suitable for direct replacement in applications where gate drive capability is available.

IRFP27N60KPBF (Vishay Siliconix)

This part exceeds the primary specifications with 27A continuous drain current and 500W power dissipation. The 600V rating matches the IXFH26N60P. On-state resistance is superior at 220 mOhm. Gate charge remains at 180 nC. All regulatory requirements are met. This substitute provides enhanced current and thermal headroom for applications requiring higher performance margins.

SPW16N50C3FKSA1 (Infineon Technologies CoolMOS™)

This part operates at reduced specifications: 560V drain-to-source voltage and 16A continuous drain current. Power dissipation is limited to 160W. Gate charge is lower at 66 nC, reducing gate drive requirements. This substitute is applicable only to applications with reduced current demands (16A or less) and where the 560V rating provides sufficient voltage margin. The lower gate charge may improve switching efficiency in gate-drive-limited designs.

SPW17N80C3FKSA1 (Infineon Technologies CoolMOS™)

This part provides higher voltage rating (800V) with reduced current capability (17A). Power dissipation is 227W. Gate charge is 177 nC. This substitute is suitable for applications requiring higher voltage headroom while accepting reduced current capacity. The 800V rating provides margin for transient overvoltage conditions.

STW18N60M2 (STMicroelectronics MDmesh™ II Plus)

This part operates at reduced specifications: 600V rating with 13A continuous drain current and 110W power dissipation. Gate charge is significantly lower at 21.5 nC, enabling efficient gate drive operation. This substitute is applicable only to applications with current requirements of 13A or less. The low gate charge characteristic is beneficial for high-frequency switching applications with limited gate drive capability.

Frequently Asked Questions (FAQ)

Q: Can the IRFP26N60LPBF directly replace the IXFH26N60P in all applications?

A: The IRFP26N60LPBF matches the 600V and 26A specifications and is electrically compatible. However, the higher gate charge (180 nC vs. 72 nC) requires verification that the gate drive circuit can supply the additional charge. Package compatibility must be confirmed; the IRFP26N60LPBF uses TO-247AC while the IXFH26N60P uses TO-247AD. Both are TO-247-3 family devices with identical pin configurations and mounting footprints.

Q: Why does the IRFP27N60KPBF have lower on-state resistance than the IXFH26N60P despite similar ratings?

A: The IRFP27N60KPBF is rated for 27A continuous drain current compared to 26A for the IXFH26N60P. The lower on-state resistance (220 mOhm vs. 270 mOhm) reflects the device design optimized for higher current capability. This results in lower power dissipation and improved thermal performance in high-current applications.

Q: Is the SPW16N50C3FKSA1 suitable as a substitute if my application only requires 16A?

A: The SPW16N50C3FKSA1 is suitable only if the application current requirement does not exceed 16A and the 560V drain-to-source voltage provides adequate margin above the maximum circuit voltage. The 560V rating is 40V lower than the IXFH26N60P; this reduction must be evaluated against transient overvoltage conditions in the application.

Q: What is the significance of gate charge differences between these parts?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. Higher gate charge requires more energy from the gate drive circuit and increases switching losses. The IXFH26N60P requires 72 nC, while the IRFP26N60LPBF requires 180 nC. Gate drive circuits must be verified to supply the required charge within acceptable switching time windows.

Q: Are all substitute parts RoHS3 compliant and REACH unaffected?

A: Yes. All substitute parts listed (IRFP26N60LPBF, IRFP27N60KPBF, SPW16N50C3FKSA1, SPW17N80C3FKSA1, and STW18N60M2) are RoHS3 compliant and REACH unaffected, matching the regulatory status of the IXFH26N60P.

Q: Can the STW18N60M2 be used in applications designed for 26A operation?

A: No. The STW18N60M2 is rated for 13A continuous drain current, which is insufficient for applications requiring 26A. Using this part in a 26A application would result in device overstress and failure. The STW18N60M2 is applicable only to applications with current requirements of 13A or less.

Q: What are the package compatibility considerations?

A: All substitute parts use TO-247-3 family packages (TO-247AC, PG-TO247-3-1, or TO-247-3). These packages have identical pin configurations and mounting footprints, enabling direct mechanical substitution on standard TO-247 PCB layouts. The IXFH26N60P uses TO-247AD, which is mechanically compatible with TO-247-3 footprints.

Q: How do I select between the Vishay and Infineon substitutes?

A: Selection depends on application requirements. The Vishay IRFP26N60LPBF and IRFP27N60KPBF maintain 600V and 26A+ specifications with higher gate charge. The Infineon CoolMOS™ parts (SPW16N50C3FKSA1 and SPW17N80C3FKSA1) offer lower gate charge but with reduced current or voltage ratings. Choose based on whether the application prioritizes current/voltage capability or gate drive efficiency.

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