IXFH26N55Q Equivalent & Substitute Parts

Part Overview

The IXFH26N55Q is an N-Channel MOSFET manufactured by IXYS, rated for 550V drain-to-source voltage with 26A continuous drain current at 25°C. This device is housed in a TO-247AD through-hole package and is part of the HiPerFET™ series. The part is currently obsolete, necessitating identification of functionally equivalent alternatives from active manufacturers for new designs and production continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	550	V
Continuous Drain Current (Id) @ 25°C	26	A
On-State Resistance (Rds On) @ 13A, 10V	230	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	4.5	V
Gate Charge (Qg) @ 10V	92	nC
Power Dissipation (Max)	375	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXFH26N55Q is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 550V to maintain voltage margin in the application. Parts rated at 500V operate below the original specification and are classified as similar alternatives rather than direct equivalents.

Current Rating Compatibility: Substitute parts must support continuous drain current (Id) at or above 26A at 25°C to ensure thermal and electrical performance equivalence.

On-State Resistance (Rds On): The original part specifies 230mOhm at 13A and 10V gate drive. Substitute parts with comparable or lower Rds On values maintain or improve efficiency characteristics.

Package and Mounting: All substitute parts must use TO-247-3 through-hole packaging to ensure mechanical and thermal interface compatibility with existing PCB designs.

Gate Drive Voltage: All parts operate at 10V gate drive voltage, ensuring compatibility with existing gate driver circuits.

Operating Temperature Range: All parts support the -55°C to 150°C operating range, maintaining thermal performance specifications.

Parameter Comparison

Parameter	IXFH26N55Q	IRFP27N60KPBF	IRFP22N50APBF	IRFP23N50LPBF	SIHG22N50D-E3	SIHG20N50C-E3	STW19NM50N
Vdss (V)	550	600	500	500	500	500	500
Id @ 25°C (A)	26	27	22	23	22	20	14
Rds On @ 10V (mOhm)	230 @ 13A	220 @ 16A	230 @ 13A	235 @ 14A	230 @ 11A	270 @ 10A	250 @ 7A
Qg @ 10V (nC)	92	180	120	150	98	76	34
Ciss @ 25V (pF)	3000	4660	3450	3600	1938 @ 100V	2942	1000 @ 50V
Power Dissipation (W)	375	500	277	370	312	250	110
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	REACH Affected	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Equivalent (Voltage and Current Rated):

IRFP27N60KPBF is the only substitute part that exceeds the original 550V voltage specification while maintaining equivalent current handling at 27A. This part is rated for 600V, providing additional voltage margin. It is manufactured by Vishay Siliconix, carries active product status, and is ROHS3 compliant. The on-state resistance of 220mOhm at 16A is comparable to the original specification. This part is suitable for direct replacement in applications requiring 550V or higher voltage ratings.

Similar Alternatives (500V Voltage Rating):

SIHG22N50D-E3 and SIHG22N50D-GE3 are rated for 500V and 22A, with on-state resistance of 230mOhm at 11A, matching the original part's Rds On specification. Both are manufactured by Vishay Siliconix and carry active product status with ROHS3 compliance. These parts are suitable for applications where the 500V rating is acceptable and where the 22A current rating meets system requirements.

IRFP22N50APBF is rated for 500V and 22A with 230mOhm on-state resistance at 13A, directly matching the original part's Rds On specification point. This part is ROHS3 compliant and carries active product status.

IRFP23N50LPBF is rated for 500V and 23A with 235mOhm on-state resistance at 14A. This part is ROHS3 compliant and carries active product status, though REACH status is listed as affected.

Lower Current Alternatives:

SIHG20N50C-E3 is rated for 500V and 20A with 270mOhm on-state resistance. This part is suitable only for applications where 20A current capacity is sufficient.

STW19NM50N is rated for 500V and 14A with 250mOhm on-state resistance. This part carries the MDmesh™ II series designation and is suitable only for applications where 14A current capacity is sufficient.

Compliance Considerations:

All recommended substitute parts carry ROHS3 compliance except where noted. IRFP23N50LPBF and IRFP27N60KPBF carry REACH Affected status. All parts maintain the -55°C to 150°C operating temperature range and TO-247-3 package compatibility.

Frequently Asked Questions (FAQ)

Q: Can IRFP27N60KPBF be used as a direct replacement for IXFH26N55Q?

A: Yes. IRFP27N60KPBF meets or exceeds all critical parameters: 600V Vdss (exceeds 550V requirement), 27A Id (exceeds 26A requirement), 220mOhm Rds On (comparable to 230mOhm), and identical TO-247-3 package. The part is active and ROHS3 compliant.

Q: Why are 500V-rated parts listed as alternatives rather than direct equivalents?

A: The original IXFH26N55Q is rated for 550V. Parts rated at 500V operate 50V below the original specification, reducing voltage margin in the application. These parts are suitable only when the application circuit operates below 500V or when additional voltage margin is not required.

Q: Are all substitute parts pin-compatible with the original IXFH26N55Q?

A: Yes. All substitute parts use the TO-247-3 package with identical pin configuration and mechanical interface. PCB layout modifications are not required for package compatibility.

Q: What is the significance of on-state resistance (Rds On) in selecting a substitute?

A: Rds On directly determines power dissipation and thermal performance. The original part specifies 230mOhm at 13A and 10V. Substitute parts with equal or lower Rds On values maintain or improve efficiency. Higher Rds On values increase heat generation and may require thermal design review.

Q: Can STW19NM50N be used in place of IXFH26N55Q?

A: STW19NM50N is rated for only 14A continuous current, compared to the original 26A specification. This part is suitable only for applications where the required current is 14A or less. Using this part in a 26A application would result in thermal failure.

Q: What is the difference between SIHG22N50D-E3 and SIHG22N50D-GE3?

A: Both parts are electrically identical with 500V, 22A, and 230mOhm Rds On specifications. SIHG22N50D-E3 carries REACH Unaffected status, while SIHG22N50D-GE3 does not specify REACH status in the provided data. Both are ROHS3 compliant and active products.

Q: Does gate charge (Qg) affect the choice of substitute part?

A: Gate charge affects gate driver design and switching speed. The original part specifies 92nC at 10V. Substitute parts with lower Qg values (such as STW19NM50N at 34nC) reduce gate driver power requirements and may improve switching performance. Higher Qg values require more gate driver current but do not prevent substitution if the gate driver is rated accordingly.

Q: Are all substitute parts available in the same packaging options as the original?

A: All substitute parts listed are available in TO-247-3 through-hole packages. Some parts are supplied in tube packaging. Verify packaging and quantity requirements with the supplier for your specific procurement needs.

Q: What compliance certifications should be verified for new designs?

A: All recommended substitute parts carry ROHS3 compliance. REACH status varies by part number. For applications subject to REACH regulations, verify that the selected part carries REACH Unaffected or REACH Compliant status. All parts carry EAR99 export classification and are HTSUS 8541.29.0095.

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