IXFH26N50P N-Channel 500V 26A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH26N50P is an N-Channel power MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 26A continuous drain current at 25°C. This device is packaged in a TO-247AD through-hole configuration and is part of the HiPerFET™ series. The part is currently in active production status with 3,187 units in stock.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative sourcing is required for supply chain resilience, or when design flexibility permits selection from multiple qualified manufacturers offering comparable electrical and mechanical characteristics within the same voltage and current class.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	26	A
On-State Resistance (Rds On) @ Id, Vgs	230 mOhm @ 13A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	5.5	V @ 4mA
Gate Charge (Qg) @ Vgs	60	nC @ 10V
Input Capacitance (Ciss) @ Vds	3600	pF @ 25V
Power Dissipation (Max)	400	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247AD	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IXFH26N50P is determined by the following critical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 500V (exact match required)
Continuous Drain Current (Id): 26A or higher (equal or greater capacity)
Package Type: TO-247 family (mechanical and thermal compatibility)
FET Type: N-Channel (functional equivalence)
Technology: MOSFET Metal Oxide (process compatibility)

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower or equivalent values indicate improved or comparable performance
Gate Charge (Qg): Lower values reduce switching losses
Operating Temperature Range: -55°C to 150°C (standard industrial range)
Regulatory Compliance: RoHS3 and REACH status alignment

Substitute parts are grouped into two categories:

Category A – Direct Equivalents (26A @ 500V): Parts with identical or superior current ratings at 500V, maintaining the same thermal and electrical performance envelope.

Category B – Functional Alternatives (20–24A @ 500V): Parts with reduced current ratings but compatible voltage class, suitable for applications with lower current demands or where thermal headroom permits derating.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Inventory (Pcs)
IXFH26N50P	IXYS	500	26	230 @ 13A, 10V	60 @ 10V	3600 @ 25V	400	TO-247AD	3,187
APT5020BVFRG	Microchip Technology	500	26	200 @ 500mA, 10V	225 @ 10V	4440 @ 25V	—	TO-247 [B]	14,218
APT5020BVRG	Microchip Technology	500	26	200 @ 500mA, 10V	225 @ 10V	4440 @ 25V	—	TO-247 [B]	867
APT24F50B	Microchip Technology	500	24	240 @ 11A, 10V	90 @ 10V	3630 @ 25V	335	TO-247 [B]	983
IRFP23N50LPBF	Vishay Siliconix	500	23	235 @ 14A, 10V	150 @ 10V	3600 @ 25V	370	TO-247AC	15,301
IRFP460PBF	Vishay Siliconix	500	20	270 @ 12A, 10V	210 @ 10V	4200 @ 25V	280	TO-247AC	31,634
IRFP460APBF	Vishay Siliconix	500	20	270 @ 12A, 10V	105 @ 10V	3100 @ 25V	280	TO-247AC	2,792
IRFP460LCPBF	Vishay Siliconix	500	20	270 @ 12A, 10V	120 @ 10V	3600 @ 25V	280	TO-247AC	1,705
SIHG20N50C-E3	Vishay Siliconix	500	20	270 @ 10A, 10V	76 @ 10V	2942 @ 25V	250	TO-247AC	23,400
STW19NM50N	STMicroelectronics	500	14	250 @ 7A, 10V	34 @ 10V	1000 @ 50V	110	TO-247-3	2,443
STW20NK50Z	STMicroelectronics	500	17	270 @ 8.5A, 10V	119 @ 10V	2600 @ 25V	190	TO-247-3	7,794

Engineering Selection Recommendations

Category A – Direct Current Equivalents (26A @ 500V)

The APT5020BVFRG and APT5020BVRG (Microchip Technology, POWER MOS V® series) are direct electrical equivalents to the IXFH26N50P, both rated for 500V and 26A continuous drain current. Both parts are RoHS3 compliant, REACH unaffected, and packaged in TO-247 [B] configuration. The APT5020BVFRG offers significantly higher inventory availability (14,218 units) compared to the APT5020BVRG (867 units). These parts feature lower on-state resistance (200 mOhm) compared to the IXFH26N50P (230 mOhm), indicating improved conduction efficiency. However, gate charge is higher (225 nC versus 60 nC), resulting in increased switching losses. Both parts maintain the full -55°C to 150°C operating temperature range and are suitable for direct substitution in applications where the TO-247 package variant is acceptable.

Category B – Reduced Current Alternatives (20–24A @ 500V)

The APT24F50B (Microchip Technology, POWER MOS 8™ series) provides 24A continuous current at 500V in TO-247 [B] packaging. This part is RoHS3 compliant and REACH unaffected, with 983 units in stock. The IRFP23N50LPBF (Vishay Siliconix) delivers 23A at 500V in TO-247AC packaging with 15,301 units available. Both parts are suitable for applications where the 26A rating of the IXFH26N50P exceeds system requirements, allowing thermal derating and extended component life.

The IRFP460PBF (Vishay Siliconix) is rated for 20A at 500V with the highest inventory availability (31,634 units) among all substitutes. This part is RoHS3 compliant and REACH unaffected. The SIHG20N50C-E3 (Vishay Siliconix) also provides 20A at 500V with 23,400 units in stock and features the lowest gate charge (76 nC) among 20A alternatives, reducing switching losses.

Lower Current Alternatives (14–17A @ 500V)

The STW19NM50N (STMicroelectronics, MDmesh™ II series) and STW20NK50Z (STMicroelectronics, SuperMESH™ series) are suitable only for applications with significantly reduced current requirements. The STW19NM50N provides 14A at 500V with minimal gate charge (34 nC), while the STW20NK50Z delivers 17A at 500V. Both are RoHS3 compliant and REACH unaffected. These parts are not recommended as primary substitutes for the IXFH26N50P due to substantial current derating requirements.

Regulatory and Compliance Alignment

All substitute parts listed maintain RoHS3 compliance and are classified under ECCN EAR99 with HTSUS code 8541.29.0095, matching the regulatory profile of the IXFH26N50P. Moisture sensitivity level is uniformly MSL 1 (Unlimited) across all parts, indicating no special handling requirements.

Frequently Asked Questions (FAQ)

Q: Can the APT5020BVFRG directly replace the IXFH26N50P in existing designs?

A: The APT5020BVFRG is electrically equivalent at 500V and 26A ratings and uses the same TO-247 package family. However, the TO-247 [B] variant differs mechanically from the TO-247AD. Verification of PCB footprint compatibility and thermal interface design is required before implementation. Both parts maintain identical operating temperature ranges and regulatory compliance.

Q: What is the impact of higher gate charge in the APT5020 series?

A: The APT5020BVFRG and APT5020BVRG exhibit gate charge of 225 nC compared to 60 nC in the IXFH26N50P. This increases the energy required for gate switching, resulting in higher switching losses and potentially requiring gate driver circuit adjustments. Applications with high switching frequencies will experience greater power dissipation with these parts.

Q: Are the IRFP460 variants suitable substitutes for the IXFH26N50P?

A: The IRFP460 series (IRFP460PBF, IRFP460APBF, IRFP460LCPBF) are rated for 20A at 500V, representing a 23% reduction in continuous current capacity compared to the IXFH26N50P. These parts are suitable only for applications where the 26A rating provides design margin and thermal derating is acceptable. Direct substitution without circuit analysis is not recommended.

Q: What are the package compatibility considerations?

A: The IXFH26N50P uses TO-247AD packaging. Substitute parts are available in TO-247 [B] (Microchip) and TO-247AC (Vishay) variants. While all three are TO-247 family members with identical pin configurations, mechanical dimensions and thermal interface characteristics may differ. PCB footprint verification is mandatory before part substitution.

Q: Which substitute offers the best switching performance?

A: The SIHG20N50C-E3 features the lowest gate charge (76 nC) among 20A alternatives, minimizing switching losses. The STW19NM50N provides the absolute lowest gate charge (34 nC) but at significantly reduced current capacity (14A). For 26A equivalent performance, the APT5020 series offers lower on-state resistance (200 mOhm) but higher gate charge, requiring trade-off analysis based on application switching frequency and thermal constraints.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance and REACH unaffected or affected status as specified. Regulatory compliance is uniform across all alternatives, with no exemptions or restrictions applicable to the IXFH26N50P or its substitutes.

Q: What inventory considerations apply to substitute selection?

A: The IRFP460PBF offers the highest availability (31,634 units), followed by the APT5020BVFRG (14,218 units) and IRFP23N50LPBF (15,301 units). The APT5020BVRG and STW19NM50N have limited availability (867 and 2,443 units respectively). Inventory levels should be evaluated against supply chain requirements and lead time constraints.

Q: Can the STW19NM50N or STW20NK50Z be used in high-current applications?

A: No. The STW19NM50N (14A) and STW20NK50Z (17A) are substantially derated compared to the IXFH26N50P (26A). These parts are suitable only for applications with inherently lower current requirements or where significant thermal derating is acceptable. Use in applications designed for 26A operation will result in excessive junction temperatures and reduced component reliability.

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