IXFH26N50 N-Channel 500V 26A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH26N50 is an N-Channel 500V 26A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-247AD through-hole package. This device is rated for 300W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently classified as "Not For New Designs," indicating it has reached end-of-life status. Identifying equivalent and substitute parts is necessary for ongoing maintenance, repair, and legacy system support where the original component is no longer readily available or where design flexibility permits alternative solutions.

Key Parameters

Parameter	Value	Unit	Condition
Drain to Source Voltage (Vdss)	500	V	Absolute Maximum
Continuous Drain Current (Id)	26	A	@ 25°C (Tc)
On-State Resistance (Rds On)	200	mOhm	@ 13A, 10V Vgs
Gate Threshold Voltage (Vgs(th))	4	V	@ 4mA
Gate Charge (Qg)	160	nC	@ 10V Vgs
Input Capacitance (Ciss)	4200	pF	@ 25V Vds
Power Dissipation (Max)	300	W	@ Tc
Operating Temperature Range	-55 to 150	°C	Tj
Package Type	TO-247-3	—	Through Hole
RoHS Status	ROHS3 Compliant	—	—

Substitute Part Grouping Explanation

Substitution of the IXFH26N50 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 500V or higher
Continuous Drain Current (Id): 26A or higher at 25°C
On-State Resistance (Rds On): 200mOhm or lower at rated conditions
Package Type: TO-247-3 (through-hole mounting)
Gate Drive Voltage: 10V standard
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Factors:

Gate Threshold Voltage (Vgs(th)): 4V to 5.5V range
Gate Charge (Qg): Lower values preferred for faster switching
Input Capacitance (Ciss): Lower values reduce gate drive requirements
Power Dissipation: 300W or higher preferred for thermal margin

Substitute parts are grouped into three categories based on electrical performance alignment:

Category A - Direct Equivalents (IXYS HiPerFET™ Series): IXFH26N50P and IXFH26N50P3 maintain identical voltage and current ratings with improved power dissipation (400W and 500W respectively) and active product status.

Category B - Higher Current Capability (Vishay Siliconix): IRFP31N50LPBF (31A) and IRFP32N50KPBF (32A) exceed the 26A requirement with superior current handling and lower Rds On values.

Category C - Voltage/Current Trade-offs (Infineon CoolMOS™ and Vishay): IPW50R140CPFKSA1 (550V, 23A) and IPW50R250CPFKSA1 (500V, 13A) provide voltage headroom or alternative current ratings with different thermal characteristics.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd (W)	Status
IXFH26N50	IXYS	500	26	200	160	4200	300	Not For New Designs
IXFH26N50P	IXYS	500	26	230	60	3600	400	Active
IXFH26N50P3	IXYS	500	26	230	42	2220	500	Active
IPW50R140CPFKSA1	Infineon	550	23	140	64	2540	192	Last Time Buy
IPW50R250CPFKSA1	Infineon	500	13	250	36	1420	114	Active
IRFP31N50LPBF	Vishay Siliconix	500	31	180	210	5000	460	Active
IRFP32N50KPBF	Vishay Siliconix	500	32	160	190	5280	460	Active
IRFP360LCPBF	Vishay Siliconix	400	23	200	110	3400	280	Active
IRFP360PBF	Vishay Siliconix	400	23	200	210	4500	280	Active
IRFP448PBF	Vishay Siliconix	500	11	600	84	1900	180	Active
SIHG25N40D-GE3	Vishay Siliconix	400	25	170	88	1707	278	Active

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Status, Full Compatibility):

IXFH26N50P and IXFH26N50P3 are the preferred substitutes. Both are manufactured by IXYS in the same HiPerFET™ series with identical voltage and current ratings. IXFH26N50P3 offers superior performance with reduced gate charge (42nC vs. 160nC) and lower input capacitance (2220pF vs. 4200pF), enabling faster switching and reduced gate drive power. Both parts maintain ROHS3 compliance and active product status, ensuring long-term availability and supply chain stability.

Secondary Substitutes (Higher Current Capability):

IRFP32N50KPBF (Vishay Siliconix) provides 32A continuous drain current with superior on-state resistance (160mOhm) and active product status. This part exceeds the original 26A specification, offering thermal margin and lower conduction losses. IRFP31N50LPBF offers similar benefits at 31A. Both are housed in TO-247AC packages (mechanically compatible with TO-247-3) and maintain ROHS3 compliance.

Conditional Substitutes (Voltage or Current Trade-offs):

IPW50R140CPFKSA1 (Infineon CoolMOS™) provides 550V rating with superior on-state resistance (140mOhm) but reduced current capability (23A). This part is suitable only for applications where the 26A requirement can be relaxed. Status is "Last Time Buy," limiting future availability.

IRFP360LCPBF and IRFP360PBF operate at 400V, reducing voltage headroom by 100V. These parts are suitable only for applications with maximum operating voltages below 400V and are not recommended for direct substitution in 500V-rated circuits.

IRFP448PBF (500V, 11A) and IPW50R250CPFKSA1 (500V, 13A) have insufficient current ratings and are not suitable substitutes.

Compliance and Certification:

All recommended substitutes maintain ROHS3 compliance. IRFP32N50KPBF carries REACH Affected status; verify compliance requirements for your application. All parts operate within the -55°C to 150°C temperature range.

Frequently Asked Questions (FAQ)

Q1: Can IXFH26N50P directly replace IXFH26N50 without circuit modifications?

A: Yes. IXFH26N50P maintains identical voltage (500V) and current (26A) ratings with the same 10V gate drive voltage. The primary differences are reduced gate charge (60nC vs. 160nC) and improved power dissipation (400W vs. 300W). These changes are beneficial and require no circuit modifications. Verify gate drive circuit compatibility with the lower gate charge specification.

Q2: What is the difference between IXFH26N50P and IXFH26N50P3?

A: Both parts are pin-compatible IXYS HiPerFET™ devices with identical voltage and current ratings. IXFH26N50P3 offers superior switching performance with gate charge of 42nC (vs. 60nC) and input capacitance of 2220pF (vs. 3600pF). IXFH26N50P3 is preferred for applications requiring faster switching speeds and lower gate drive power. Both are active products with equivalent availability.

Q3: Can IRFP32N50KPBF replace IXFH26N50 in all applications?

A: IRFP32N50KPBF is electrically compatible with superior current capability (32A vs. 26A) and lower on-state resistance (160mOhm vs. 200mOhm). The package is TO-247AC instead of TO-247AD; both are mechanically compatible TO-247-3 variants with identical pin configurations. Verify PCB layout compatibility. IRFP32N50KPBF is recommended for new designs and retrofit applications where improved performance is acceptable.

Q4: Why are IRFP360LCPBF and IRFP360PBF listed as substitutes if they operate at 400V?

A: These parts are listed based on the provided input data but are not recommended for direct substitution. The 100V reduction in Vdss (from 500V to 400V) eliminates voltage headroom and creates risk in circuits designed for 500V operation. Use only if your application operates exclusively below 400V and circuit design permits the voltage reduction.

Q5: What does "Last Time Buy" status mean for IPW50R140CPFKSA1?

A: "Last Time Buy" indicates Infineon has discontinued this part and is accepting final orders before production ends. Existing inventory may be available, but long-term supply is not guaranteed. This part is not recommended for new designs or long-term production applications. Use IXFH26N50P3 or IRFP32N50KPBF for sustained availability.

Q6: Are TO-247AD and TO-247AC packages interchangeable?

A: Yes. Both are TO-247-3 through-hole packages with identical pin configurations and mechanical dimensions. The suffix designations (AD vs. AC) indicate minor manufacturing variations but do not affect electrical performance or PCB compatibility. Parts can be used interchangeably in existing layouts.

Q7: How do gate charge differences affect circuit design?

A: Lower gate charge (Qg) reduces the charge that must be supplied by the gate driver, decreasing switching losses and gate drive power dissipation. IXFH26N50P3 (42nC) requires significantly less gate drive energy than IXFH26N50 (160nC). If your gate driver has current or power limitations, the lower gate charge of IXFH26N50P3 provides margin. Verify gate driver specifications for compatibility.

Q8: Which substitute offers the best thermal performance?

A: IXFH26N50P3 provides the highest power dissipation rating (500W) among direct equivalents, offering superior thermal margin. IRFP31N50LPBF and IRFP32N50KPBF (both 460W) also provide improved thermal performance compared to the original 300W rating. For thermally constrained applications, IXFH26N50P3 is preferred.

Q9: Can I use IRFP448PBF or IPW50R250CPFKSA1 if my application only requires 11-13A?

A: These parts are electrically compatible at reduced current levels but are not recommended. Using significantly over-rated components increases cost and PCB area without performance benefit. Select a substitute that matches your actual current requirement. For 26A applications, use IXFH26N50P3, IRFP32N50KPBF, or IRFP31N50LPBF.

Q10: What compliance certifications should I verify before selecting a substitute?

A: All recommended substitutes maintain ROHS3 compliance. IRFP32N50KPBF carries REACH Affected status; verify your application's REACH compliance requirements. All parts are classified as EAR99 for export control purposes. Confirm HTSUS code 8541.29.0095 applicability for your supply chain and tariff requirements.

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