IXFH24N50Q N-Channel 500V 24A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH24N50Q is an N-Channel 500V 24A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-247AD through-hole package. This device is classified as obsolete, though 5845 units remain in stock as new original inventory. The part operates across a temperature range of -55°C to 150°C and dissipates up to 300W at the case temperature.

Due to the obsolete product status of the IXFH24N50Q, equivalent and substitute parts from active manufacturers are necessary for new designs, long-term production continuity, and supply chain reliability. Substitute devices must maintain electrical compatibility within the specified parameter tolerances while accommodating minor variations in gate charge, input capacitance, and on-resistance characteristics.

Key Parameters

Parameter	Value	Unit	Condition
Drain to Source Voltage (Vdss)	500	V	Absolute Maximum
Continuous Drain Current (Id)	24	A	@ 25°C (Tc)
On-Resistance (Rds On Max)	230	mOhm	@ 12A, 10V Vgs
Gate Threshold Voltage (Vgs(th) Max)	4.5	V	@ 4mA
Gate Charge (Qg Max)	95	nC	@ 10V Vgs
Input Capacitance (Ciss Max)	3900	pF	@ 25V Vds
Power Dissipation (Max)	300	W	@ Tc
Operating Temperature Range	-55 to 150	°C	Tj
Package Type	TO-247-3	—	Through Hole
Gate Drive Voltage	10	V	Max Rds On Reference

Substitute Part Grouping Explanation

Substitution of the IXFH24N50Q is determined by strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal 500V
Package Type: Must be TO-247-3 (through-hole mounting)
Operating Temperature Range: Must span -55°C to 150°C minimum
Continuous Drain Current (Id): Must be ≥24A at 25°C

Secondary Compatibility Parameters:

On-Resistance (Rds On): Acceptable range 230–270 mOhm @ 10V Vgs (minor variations permitted within thermal design margins)
Gate Threshold Voltage (Vgs(th)): Acceptable range 3.5–5.5V (ensures gate drive compatibility)
Gate Charge (Qg): Acceptable range 36–210 nC (affects switching speed and driver requirements)
Input Capacitance (Ciss): Acceptable range 1420–4200 pF (influences gate drive circuit design)
Power Dissipation: Must be ≥250W (ensures thermal headroom for 300W applications)

Mechanical Compatibility:

All substitute parts must use TO-247-3 or TO-247AC package variants (pin-compatible through-hole configurations)
Mounting orientation and lead spacing must be identical to the original part

Substitutes are grouped into two categories: Direct Manufacturer Substitutes (same manufacturer, active product status) and Similar Cross-Manufacturer Substitutes (alternative manufacturers, active status, equivalent electrical performance).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs(th) Max (V)	Qg Max (nC)	Ciss Max (pF)	Pd Max (W)	Package	Status
IXFH24N50Q	IXYS	500	24	230 @ 12A	4.5	95	3900	300	TO-247AD	Obsolete
IXFH26N50P	IXYS	500	26	230 @ 13A	5.5	60	3600	400	TO-247AD	Active
IPW50R250CPFKSA1	Infineon	500	13	250 @ 7.8A	3.5	36	1420	114	TO-247-3	Active
IRFP23N50LPBF	Vishay	500	23	235 @ 14A	5	150	3600	370	TO-247-3	Active
IRFP460APBF	Vishay	500	20	270 @ 12A	4	105	3100	280	TO-247-3	Active
IRFP460LC	Vishay	500	20	270 @ 12A	4	120	3600	280	TO-247-3	Active
IRFP460LCPBF	Vishay	500	20	270 @ 12A	4	120	3600	280	TO-247-3	Active
IRFP460PBF	Vishay	500	20	270 @ 12A	4	210	4200	280	TO-247-3	Active
SIHG20N50C-E3	Vishay	500	20	270 @ 10A	5	76	2942	250	TO-247-3	Active
SIHG22N50D-E3	Vishay	500	22	230 @ 11A	5	98	1938	312	TO-247-3	Active
SIHG22N50D-GE3	Vishay	500	22	230 @ 11A	5	98	1938	312	TO-247-3	Active

Engineering Selection Recommendations

Direct Manufacturer Substitute (Recommended for IXYS Platform Continuity):

The IXFH26N50P is the primary direct substitute from IXYS. This part maintains the same manufacturer ecosystem, HiPerFET™ series technology, and TO-247AD package compatibility. The IXFH26N50P exceeds the original specification with 26A continuous drain current (versus 24A), 400W power dissipation (versus 300W), and improved gate charge characteristics (60 nC versus 95 nC). The part is in active production status with 3187 units in stock. RoHS3 compliance and unlimited moisture sensitivity rating ensure modern supply chain compatibility.

Cross-Manufacturer Substitutes (For Multi-Source Strategies):

Tier 1 – Closest Electrical Match:

SIHG22N50D-E3 and SIHG22N50D-GE3 (Vishay): Both deliver 22A continuous current with 230 mOhm on-resistance, matching the original part's thermal performance profile. Power dissipation of 312W provides adequate margin. Gate charge of 98 nC and input capacitance of 1938 pF @ 100V offer improved switching characteristics. Both are RoHS3 compliant and in active production (1700 and 1420 units respectively).
IRFP23N50LPBF (Vishay): Provides 23A continuous current with 235 mOhm on-resistance and 370W power dissipation. Gate charge of 150 nC is higher than the original but within acceptable limits for standard gate drive circuits. RoHS3 compliant and actively produced (15301 units in stock).

Tier 2 – Acceptable Substitutes with Current Derating:

IRFP460APBF, IRFP460LC, IRFP460LCPBF, and IRFP460PBF (Vishay): All rated for 20A continuous current, requiring 4A current derating from the original 24A specification. On-resistance of 270 mOhm is slightly elevated. Power dissipation of 280W is marginally lower than the original 300W. These parts are suitable for applications where the 20A rating provides sufficient design margin. IRFP460PBF has the highest inventory (31634 units) and is RoHS3 compliant.
SIHG20N50C-E3 (Vishay): Rated for 20A continuous current with 270 mOhm on-resistance and 250W power dissipation. Gate charge of 76 nC and input capacitance of 2942 pF provide excellent switching performance. RoHS3 compliant with 23400 units in stock.

Not Recommended for Direct Substitution:

IPW50R250CPFKSA1 (Infineon CoolMOS™): Although electrically compatible at 500V, the 13A continuous current rating represents a 46% derating from the original 24A specification. This part is suitable only for applications with significantly reduced current requirements or as a secondary alternative when primary substitutes are unavailable.

Compliance and Supply Chain Considerations: All recommended substitutes are RoHS3 compliant and carry unlimited moisture sensitivity ratings (MSL 1), ensuring compatibility with modern manufacturing processes. Vishay parts carry REACH compliance status (either unaffected or affected, as noted), while IXYS and Infineon parts are classified as REACH unaffected. All parts share the same ECCN (EAR99) and HTSUS code (8541.29.0095) classification as the original part.

Frequently Asked Questions (FAQ)

Q1: Can the IXFH26N50P directly replace the IXFH24N50Q without circuit modifications?

A: Yes. The IXFH26N50P is pin-compatible in the TO-247AD package and maintains identical electrical specifications for Vdss (500V), gate drive voltage (10V), and operating temperature range (-55°C to 150°C). The higher current rating (26A versus 24A) and improved gate charge (60 nC versus 95 nC) provide enhanced performance without requiring circuit redesign. Verify that your gate driver can accommodate the lower gate charge if switching frequency is critical.

Q2: What is the significance of the on-resistance (Rds On) variation among substitutes?

A: On-resistance directly affects power dissipation and thermal performance. The original IXFH24N50Q specifies 230 mOhm @ 12A, 10V. Substitutes with identical or lower on-resistance (IXFH26N50P, SIHG22N50D-E3, SIHG22N50D-GE3, IRFP23N50LPBF) maintain or improve thermal margins. Parts with higher on-resistance (IRFP460 series at 270 mOhm) generate additional heat and require verification that your thermal design accommodates the increased power dissipation. Calculate junction temperature using: Tj = Tc + (Pd × θjc), where θjc is the junction-to-case thermal resistance.

Q3: Why do some substitutes have significantly lower gate charge (Qg)?

A: Gate charge affects switching speed and gate driver power consumption. Lower gate charge (e.g., IPW50R250CPFKSA1 at 36 nC, SIHG20N50C-E3 at 76 nC) enables faster switching transitions and reduces driver losses. Higher gate charge (e.g., IRFP460PBF at 210 nC) requires longer gate drive pulses but is compatible with standard driver circuits. Select based on your switching frequency and gate driver specifications. For high-frequency applications (>100 kHz), prefer parts with lower gate charge.

Q4: What does the TO-247-3 package designation mean, and is it compatible with TO-247AD?

A: Both TO-247-3 and TO-247AD are three-lead through-hole packages with identical pin spacing (100 mil / 2.54 mm) and lead configuration (Gate, Drain, Source). The primary difference is mechanical: TO-247AD includes a mounting hole for heatsink attachment, while TO-247-3 is the generic designation. Parts specified as TO-247AC or TO-247-3 are mechanically and electrically interchangeable with TO-247AD in PCB layouts. Verify heatsink mounting requirements for your application.

Q5: Can I use IRFP460 series parts (20A rating) in a 24A application?

A: Not without derating. The IRFP460 series is rated for 20A continuous current, representing a 17% reduction from the original 24A specification. Use only if your actual operating current is ≤20A with adequate safety margin. If your application requires the full 24A capability, select IXFH26N50P, IRFP23N50LPBF, or SIHG22N50D-E3 instead. Exceeding the rated continuous current will cause junction temperature to exceed maximum limits and reduce device reliability.

Q6: What is the difference between IRFP460LC and IRFP460LCPBF?

A: Both parts are electrically identical (500V, 20A, 270 mOhm on-resistance, TO-247-3 package). The primary difference is RoHS compliance status: IRFP460LC is RoHS non-compliant, while IRFP460LCPBF is RoHS3 compliant. For new designs and modern supply chains, use IRFP460LCPBF. IRFP460LC is suitable only for legacy applications or regions without RoHS requirements.

Q7: How do I select between multiple Vishay substitutes (SIHG22N50D-E3 versus IRFP23N50LPBF)?

A: Both are excellent substitutes with 22–23A ratings and comparable on-resistance. SIHG22N50D-E3 offers lower gate charge (98 nC) and lower input capacitance (1938 pF @ 100V), making it preferable for high-frequency switching applications. IRFP23N50LPBF provides higher power dissipation (370W versus 312W) and higher gate charge (150 nC), suitable for lower-frequency applications with greater thermal headroom. Verify availability and lead time; IRFP23N50LPBF has significantly higher inventory (15301 units).

Q8: Are there any temperature or compliance restrictions I should consider?

A: All recommended substitutes operate across the full -55°C to 150°C temperature range, matching the original part. All are classified as MSL 1 (unlimited moisture sensitivity), eliminating moisture-related reliability concerns. For RoHS and REACH compliance, verify your regional requirements: Vishay parts are either REACH unaffected or REACH affected (noted in specifications). IXYS and Infineon parts are REACH unaffected. All parts share the same ECCN classification (EAR99), requiring no additional export documentation.

Q9: What inventory considerations should I factor into my substitution decision?

A: IRFP460PBF has the highest inventory (31634 units), ensuring long-term availability and competitive pricing. SIHG20N50C-E3 (23400 units) and IRFP23N50LPBF (15301 units) also provide strong supply security. IXFH26N50P (3187 units) and SIHG22N50D variants (1700–1420 units) have lower inventory but remain in active production. For critical applications, establish multi-source strategies using parts from different manufacturers to mitigate supply chain disruptions.

Q10: Should I test substitutes before full production deployment?

A: Verification of electrical performance, thermal behavior, and gate drive compatibility is a standard engineering practice. Conduct bench testing to confirm switching characteristics, thermal performance under your specific load conditions, and gate driver compatibility. This is particularly important when transitioning from the obsolete IXFH24N50Q to active substitutes, as manufacturing processes and material compositions may differ slightly between manufacturers and product generations.

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