IXFH23N80Q N-Channel 800V 23A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH23N80Q is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 23A continuous drain current at 25°C. This device belongs to the HiPerFET™ Q Class series and is housed in a TO-247AD through-hole package. The part is currently Active in product status with 1967 units in stock.

Substitute parts are identified when equivalent electrical performance can be achieved within the allowed parameter ranges for N-Channel MOSFET applications. Substitution becomes necessary when the primary part reaches end-of-life status, inventory constraints occur, or design requirements permit operation within the electrical specifications of alternative devices.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	23	A
Power Dissipation (Max)	500	W
RDS(on) Max @ 500mA, 10V	420	mOhm
Gate Charge (Qg) Max @ 10V	130	nC
Input Capacitance (Ciss) Max @ 25V	4900	pF
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	Through Hole
Gate Voltage Max (Vgs)	±30	V

Substitute Part Grouping Explanation

Substitution logic for the IXFH23N80Q is based on the following criteria derived from the provided electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: N-Channel MOSFET technology
Drain-to-Source Voltage (Vdss): 800V or higher
Continuous Drain Current (Id): Equal to or greater than 23A at 25°C
Package Type: TO-247-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C or equivalent
RoHS3 Compliance and REACH Unaffected status

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower or equivalent values preferred for switching performance
Input Capacitance (Ciss): Lower or equivalent values preferred for gate drive requirements
RDS(on): Lower or equivalent values preferred for thermal performance
Gate Voltage Rating (Vgs): ±30V or higher

The identified substitute parts operate within these parameter boundaries, allowing functional equivalence in applications designed for the IXFH23N80Q.

Parameter Comparison

Parameter	IXFH23N80Q	IRFPC50APBF	SPW11N80C3FKSA1	Unit
Manufacturer	IXYS	Vishay Siliconix	Infineon Technologies	—
Drain-to-Source Voltage (Vdss)	800	600	800	V
Continuous Drain Current (Id) @ 25°C	23	11	11	A
Power Dissipation (Max)	500	180	156	W
RDS(on) Max @ 10V	420 @ 500mA	580 @ 6A	450 @ 7.1A	mOhm
Gate Charge (Qg) Max @ 10V	130	70	85	nC
Input Capacitance (Ciss) Max	4900 @ 25V	2100 @ 25V	1600 @ 100V	pF
Gate Voltage Max (Vgs)	±30	±30	±20	V
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C
Package Type	TO-247-3	TO-247-3	TO-247-3	—
Product Status	Active	Active	Not For New Designs	—
RoHS3 Compliance	Yes	Yes	Yes	—

Engineering Selection Recommendations

IXFH23N80Q (Primary Part)

The IXFH23N80Q remains the preferred selection for new designs and applications requiring the full rated specifications. This device is Active in product status with adequate inventory (1967 units). It provides the highest continuous drain current (23A) and power dissipation capability (500W) among the listed options. Full compliance with RoHS3 and REACH requirements is confirmed.

IRFPC50APBF (Partial Substitute)

The IRFPC50APBF from Vishay Siliconix is suitable for applications where the drain-to-source voltage requirement is 600V or lower and continuous drain current does not exceed 11A. This device is Active in product status with 2225 units in stock. The lower Vdss rating (600V versus 800V) restricts its use to lower-voltage applications. The reduced continuous current rating (11A versus 23A) and power dissipation (180W versus 500W) limit thermal performance. This part is not a direct equivalent but may serve in de-rated applications.

SPW11N80C3FKSA1 (Limited Substitute)

The SPW11N80C3FKSA1 from Infineon Technologies matches the 800V Vdss rating but is rated for only 11A continuous drain current and 156W power dissipation. This device carries a "Not For New Designs" product status, indicating it is in end-of-life phase. The reduced current and power ratings make this part unsuitable for applications requiring the full 23A capability of the IXFH23N80Q. Use of this part is restricted to legacy system maintenance or applications with reduced current requirements.

Frequently Asked Questions (FAQ)

Q: Can the IRFPC50APBF replace the IXFH23N80Q in all applications?

A: No. The IRFPC50APBF has a maximum Vdss of 600V compared to the IXFH23N80Q's 800V rating. It is suitable only for applications operating at 600V or lower. Additionally, its 11A continuous current rating is insufficient for applications requiring the full 23A capability of the primary part.

Q: What is the significance of the SPW11N80C3FKSA1 "Not For New Designs" status?

A: This status indicates the part is in end-of-life phase and should not be selected for new product designs. It may be used only for maintenance of existing systems or legacy applications. The IXFH23N80Q or IRFPC50APBF are preferred for new designs.

Q: Are all three parts compatible with the same PCB footprint?

A: All three parts use the TO-247-3 package type and share the same through-hole mounting configuration. However, the IXFH23N80Q uses TO-247AD while the IRFPC50APBF uses TO-247AC and the SPW11N80C3FKSA1 uses PG-TO247-3-1. Verify mechanical compatibility with your specific PCB layout before substitution.

Q: Which substitute part has the lowest gate charge?

A: The IRFPC50APBF has the lowest gate charge at 70 nC @ 10V, compared to 130 nC for the IXFH23N80Q and 85 nC for the SPW11N80C3FKSA1. Lower gate charge reduces gate drive power requirements and switching losses.

Q: Can I use a substitute part rated for lower current in a high-current application?

A: No. Using a part with a lower continuous current rating in an application requiring higher current will result in thermal stress, reduced reliability, and potential device failure. Current ratings must meet or exceed application requirements.

Q: Are all parts RoHS3 compliant?

A: Yes. The IXFH23N80Q, IRFPC50APBF, and SPW11N80C3FKSA1 are all RoHS3 compliant and REACH unaffected, meeting environmental regulatory requirements.

Q: What is the impact of different Vgs(max) ratings between parts?

A: The IXFH23N80Q and IRFPC50APBF both support ±30V gate voltage, while the SPW11N80C3FKSA1 supports ±20V. Gate drive circuits must be designed to operate within the specified Vgs range of the selected device. The lower ±20V rating of the SPW11N80C3FKSA1 may require gate drive circuit modifications.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message