IXFH23N60Q N-Channel 600V 23A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH23N60Q is an N-Channel 600V 23A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-247AD through-hole package. This device is classified as obsolete, though 5740 units remain in stock. The part operates across a temperature range of -55°C to 150°C and dissipates up to 400W at the case temperature. Due to its obsolete status, identifying functionally equivalent substitute parts is necessary for ongoing design support, production continuity, and long-term component availability.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	23	A
On-State Resistance (Rds On) @ 500mA, 10V	320	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	4.5	V
Gate Charge (Qg) @ 10V	90	nC
Input Capacitance (Ciss) @ 25V	3300	pF
Power Dissipation (Max)	400	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247AD	Through Hole
Gate Drive Voltage	10	V

Substitute Part Grouping Explanation

Substitution of the IXFH23N60Q is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 23A or greater
On-State Resistance (Rds On): 320mOhm or lower for equivalent performance
Gate Drive Voltage: 10V
Package Type: TO-247 series (TO-247AD, TO-247AC, TO-247-3)
Operating Temperature Range: -55°C to 150°C minimum
Mounting Type: Through Hole

Substitute parts are grouped into two categories:

Category 1 - Direct Voltage/Current Match (600V, 23A+): Parts maintaining the same 600V Vdss rating with drain current at or above 23A. These provide the closest functional equivalence with minimal circuit redesign.

Category 2 - Higher Voltage Rating (800V+): Parts with elevated Vdss ratings (800V) that operate within the same current range. These are suitable for applications where higher voltage margin is acceptable and do not require circuit modification, provided power dissipation and thermal management remain within design limits.

All substitute parts must maintain TO-247 package compatibility, through-hole mounting, and the specified operating temperature range.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Power Diss. (W)	Package	Status
IXFH23N60Q	IXYS	600	23	320	90	3300	400	TO-247AD	Obsolete
APT23F60B	Microchip Technology	600	24	290	110	4415	415	TO-247	Active
AOK20N60L	Alpha & Omega Semiconductor	600	20	370	74	3680	417	TO-247	Obsolete
IRFP21N60LPBF	Vishay Siliconix	600	21	320	150	4000	330	TO-247AC	Active
IRFPC60LCPBF	Vishay Siliconix	600	16	400	120	3500	280	TO-247AC	Active
STW18N60DM2	STMicroelectronics	600	12	295	20	800	90	TO-247-3	Active
IXFH24N80P	IXYS	800	24	400	105	7200	650	TO-247AD	Active
STW15N80K5	STMicroelectronics	800	14	375	32	1100	190	TO-247-3	Active
STW11NM80	STMicroelectronics	800	11	400	43.6	1630	150	TO-247-3	Active
STW18NM80	STMicroelectronics	800	17	295	70	2070	190	TO-247-3	Active

Engineering Selection Recommendations

Primary Recommendation - Direct Replacement:

The APT23F60B (Microchip Technology) is the preferred direct substitute. It maintains the 600V Vdss rating, exceeds the 23A continuous drain current specification at 24A, and delivers superior on-state resistance (290mOhm vs. 320mOhm). The part is in active production status with ROHS3 compliance and REACH unaffected certification. The TO-247 package is mechanically compatible with the original TO-247AD footprint. Power dissipation capability (415W) exceeds the original specification (400W), providing additional thermal margin.

Secondary Recommendation - Active Status Alternative:

The IRFP21N60LPBF (Vishay Siliconix) maintains 600V Vdss and 21A continuous drain current with matching 320mOhm on-state resistance. This part is in active production with ROHS3 compliance. The TO-247AC package is mechanically compatible. Gate charge is elevated at 150nC compared to the original 90nC, which may require gate driver adjustment in high-frequency switching applications.

Higher Voltage Alternative:

The IXFH24N80P (IXYS) provides 800V Vdss with 24A continuous drain current in the same TO-247AD package as the original. This part is in active production status. The elevated voltage rating provides additional design margin for transient overvoltage conditions. On-state resistance increases to 400mOhm, resulting in higher conduction losses. This option is suitable for applications where voltage headroom is prioritized over efficiency.

Not Recommended:

The STW18N60DM2, STW15N80K5, STW11NM80, and STW18NM80 do not meet the continuous drain current requirement of 23A and are unsuitable as direct replacements. The AOK20N60L and IRFPC60LCPBF fall below the 23A specification and are not recommended for applications requiring the full rated current capacity.

Frequently Asked Questions (FAQ)

Q: Can the APT23F60B directly replace the IXFH23N60Q without PCB modifications?

A: Yes. The APT23F60B is housed in a TO-247 package with the same three-lead configuration (Gate, Drain, Source) as the TO-247AD original. Pin spacing and mounting hole patterns are identical. No PCB layout changes are required. Electrical parameters are compatible within design tolerances.

Q: What is the significance of the higher gate charge (Qg) in the IRFP21N60LPBF?

A: The IRFP21N60LPBF exhibits 150nC gate charge compared to the original 90nC. This parameter determines the energy required to switch the transistor on and off. Higher gate charge increases switching losses and may require a gate driver with higher current capability. In low-frequency applications (below 10 kHz), this difference is negligible. In high-frequency switching circuits (above 50 kHz), gate driver performance should be verified.

Q: Why is the IXFH24N80P listed as a substitute if it has higher on-state resistance?

A: The IXFH24N80P is listed as a higher-voltage alternative, not a direct replacement. The 800V Vdss rating provides additional voltage margin for transient overvoltage protection. The increased on-state resistance (400mOhm vs. 320mOhm) results in approximately 25% higher conduction losses. This trade-off is acceptable in applications where voltage headroom is critical and thermal management can accommodate the additional power dissipation.

Q: Are all substitute parts RoHS compliant?

A: The APT23F60B, IRFP21N60LPBF, IRFPC60LCPBF, IXFH24N80P, STW15N80K5, STW11NM80, and STW18NM80 are ROHS3 compliant. The AOK20N60L is ROHS3 compliant. The STW18N60DM2 is ROHS3 compliant. All recommended substitutes meet current RoHS requirements.

Q: What is the difference between TO-247AD, TO-247AC, and TO-247-3 packages?

A: All three are TO-247 variants with identical three-lead configurations and pin spacing. TO-247AD is the IXYS designation, TO-247AC is the Vishay designation, and TO-247-3 is the generic industry designation. These packages are mechanically and electrically interchangeable. The designations reflect manufacturer-specific naming conventions only.

Q: Can the STW18N60DM2 be used in parallel with another device to achieve 23A current capacity?

A: The STW18N60DM2 is rated for 12A continuous drain current. Parallel operation of two units would theoretically provide 24A capacity. However, this approach introduces complexity in gate drive distribution, current sharing, and thermal management. Parallel MOSFET configurations require matched on-state resistance and careful PCB layout to ensure balanced current distribution. This method is not recommended for direct substitution without comprehensive circuit redesign and thermal analysis.

Q: Is the obsolete status of the IXFH23N60Q a concern for long-term availability?

A: The IXFH23N60Q is classified as obsolete, but 5740 units are currently in stock. For new designs or production quantities beyond available inventory, transition to an active-status substitute is necessary. The APT23F60B is recommended as the primary long-term alternative due to its active production status and superior electrical characteristics.

Q: What thermal considerations apply when substituting to the APT23F60B?

A: The APT23F60B has lower on-state resistance (290mOhm vs. 320mOhm), resulting in reduced conduction losses and lower junction temperature at equivalent current levels. Power dissipation capability is 415W compared to 400W in the original. In most applications, this substitution improves thermal performance. Verify that the thermal interface material (TIM) and heatsink remain adequate for the application's maximum ambient temperature and power budget.

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