IXFH22N60P N-Channel 600V 22A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH22N60P is an N-Channel 600V 22A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-247AD through-hole package. This device is rated for 400W maximum power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently in active production status with 6250 units in stock inventory.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when design requirements demand alternative electrical characteristics, or when supply chain optimization requires component standardization across manufacturing facilities. Substitute MOSFETs must maintain compatibility with the application's voltage, current, and thermal requirements while fitting within the same or compatible package footprint.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	22	A
On-State Resistance (Rds On) @ 11A, 10V	350	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	5.5	V
Gate Charge (Qg) @ 10V	58	nC
Input Capacitance (Ciss) @ 25V	3600	pF
Maximum Gate Voltage (Vgs)	±30	V
Power Dissipation (Max)	400	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH22N60P is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must equal or exceed 22A at 25°C
Package Type: Must be TO-247-3 or compatible TO-247 variant
Mounting Type: Must be through-hole
Gate Voltage Rating (Vgs): Must accommodate ±30V or greater

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved efficiency; values within 350mOhm to 400mOhm range maintain thermal performance
Gate Charge (Qg): Lower values reduce switching losses; values up to 120nC remain acceptable for most applications
Input Capacitance (Ciss): Values between 800pF and 3900pF maintain gate drive compatibility
Power Dissipation: Minimum 280W required for thermal margin

Substitute parts are grouped into two categories: Direct Substitutes (matching or exceeding all primary criteria) and Functional Alternatives (meeting voltage and current requirements with acceptable trade-offs in secondary parameters).

Parameter Comparison

Parameter	IXFH22N60P	AOK20N60L	IPW80R360P7XKSA1	IRFPC60LCPBF	IRFPC60PBF	STW11NM80	STW18N60DM2	STW18NM60N
Manufacturer	IXYS	Alpha & Omega Semiconductor	Infineon Technologies	Vishay Siliconix	Vishay Siliconix	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	600	600	800	600	600	800	600	600
Id @ 25°C (A)	22	20	13	16	16	11	12	13
Rds On @ 10V (mOhm)	350	370	360	400	400	400	295	285
Vgs(th) (V)	5.5	4.5	3.5	4	4	5	5	4
Qg @ 10V (nC)	58	74	30	120	210	43.6	20	35
Ciss @ 25V (pF)	3600	3680	930	3500	3900	1630	800	1000
Vgs Max (V)	±30	±30	±20	±30	±20	±30	±25	±25
Power Dissipation (W)	400	417	84	280	280	150	90	110
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-65 to 150	to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Active	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Compliance	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Direct Substitutes (Recommended Priority Order):

AOK20N60L (Alpha & Omega Semiconductor): Meets 600V voltage requirement with 20A continuous current rating. On-state resistance of 370mOhm is within acceptable tolerance of the primary part. Power dissipation of 417W exceeds the 400W requirement. Maintains ±30V gate voltage rating. Note: Product status is obsolete; use only when inventory availability is confirmed and long-term supply is secured.
IRFPC60LCPBF (Vishay Siliconix): Operates at 600V with 16A continuous current. On-state resistance of 400mOhm is acceptable for applications where the 22A rating of the primary part is not fully utilized. Power dissipation of 280W is lower than the primary part; thermal design must account for reduced margin. Active product status ensures ongoing availability. Gate voltage rating of ±30V is compatible.
IRFPC60PBF (Vishay Siliconix): Identical electrical specifications to IRFPC60LCPBF with 600V, 16A, and 400mOhm Rds On. Gate voltage maximum of ±20V is lower than the primary part; verify gate drive circuit does not exceed this limit. Active product status. Gate charge of 210nC is higher than the primary part; switching frequency performance may differ.

Functional Alternatives (Limited Current Applications):

STW18N60DM2 (STMicroelectronics): Operates at 600V with 12A continuous current. Superior on-state resistance of 295mOhm provides improved efficiency. Gate charge of only 20nC reduces switching losses significantly. Input capacitance of 800pF is substantially lower, improving gate drive performance. Suitable for applications where 12A current rating is sufficient. Active product status with 1665 units in stock.
STW18NM60N (STMicroelectronics): 600V rated with 13A continuous current. On-state resistance of 285mOhm is the lowest among all substitutes, providing superior efficiency. Gate charge of 35nC is low, reducing switching losses. Input capacitance of 1000pF is favorable. Active product status. Suitable for applications requiring 13A or less.

Not Recommended for Direct Substitution:

IPW80R360P7XKSA1 (Infineon): 800V rating exceeds application requirement; 13A current rating is insufficient for 22A applications. Power dissipation of 84W is significantly lower than required. Gate voltage maximum of ±20V may be limiting. Use only in applications specifically requiring 800V operation.
STW11NM80 (STMicroelectronics): 800V rating and 11A current rating make this unsuitable for 600V/22A applications. Power dissipation of 150W is insufficient for high-power designs.

Frequently Asked Questions (FAQ)

Q: Can the AOK20N60L replace the IXFH22N60P in all applications?

A: The AOK20N60L is electrically compatible for applications requiring 20A or less continuous current at 600V. The 370mOhm on-state resistance is within acceptable tolerance. However, the part is obsolete; verify long-term supply availability before design implementation. Applications requiring the full 22A rating of the primary part must use an alternative.

Q: What is the difference between IRFPC60LCPBF and IRFPC60PBF?

A: Both parts share identical voltage (600V), current (16A), and on-state resistance (400mOhm) specifications. The primary differences are gate charge (120nC vs. 210nC) and maximum gate voltage (±30V vs. ±20V). IRFPC60LCPBF has lower gate charge, resulting in faster switching. IRFPC60PBF has a lower gate voltage maximum; verify compatibility with your gate drive circuit.

Q: Why do STW18N60DM2 and STW18NM60N have lower current ratings than the primary part?

A: These parts are designed for different applications with emphasis on efficiency and switching performance rather than maximum current handling. The STW18N60DM2 and STW18NM60N feature significantly lower on-state resistance (295mOhm and 285mOhm respectively) and gate charge (20nC and 35nC), making them superior for high-frequency switching applications. Use these parts only when the 12A or 13A current rating is sufficient for your design.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all substitute parts listed are RoHS3 compliant and REACH unaffected, matching the compliance status of the primary IXFH22N60P part.

Q: Can I use IPW80R360P7XKSA1 as a substitute?

A: The IPW80R360P7XKSA1 is not recommended as a direct substitute. While it shares the TO-247-3 package and through-hole mounting, the 800V rating and 13A current rating do not meet the 600V/22A requirements of the primary application. This part is suitable only for applications specifically designed for 800V operation with lower current requirements.

Q: What should I consider when switching from IXFH22N60P to STW18N60DM2?

A: The STW18N60DM2 operates at the same 600V but with 12A continuous current instead of 22A. Verify that your application does not exceed 12A. The significantly lower on-state resistance (295mOhm vs. 350mOhm) and gate charge (20nC vs. 58nC) will improve efficiency and reduce switching losses. The lower input capacitance (800pF vs. 3600pF) may require gate drive circuit adjustment. All thermal and compliance requirements remain compatible.

Q: Is package compatibility guaranteed across all substitute parts?

A: All substitute parts use the TO-247-3 package with through-hole mounting, ensuring mechanical compatibility with the primary part's footprint. However, verify pin assignment and lead spacing with the specific datasheet before PCB layout finalization, as some manufacturers use TO-247AC or TO-247AD variants with identical electrical function but potentially different mechanical details.

Q: What is the inventory status of substitute parts?

A: AOK20N60L has 8050 units in stock but is obsolete. IRFPC60LCPBF has 1432 units; IRFPC60PBF has 1260 units. STW18N60DM2 has 1665 units; STW18NM60N has 1787 units. IPW80R360P7XKSA1 has 890 units. All active-status parts have confirmed inventory availability.

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