IXFH22N55 N-Channel MOSFET 550V 22A TO-247AD Equivalent & Substitute Parts

Part Overview

The IXFH22N55 is an N-Channel MOSFET manufactured by IXYS, rated for 550V drain-to-source voltage with 22A continuous drain current at 25°C. This device is packaged in TO-247AD (Through Hole) configuration and is part of the HiPerFET™ series. The part is currently classified as obsolete, making identification of functionally equivalent substitute components essential for design continuity and procurement planning. Substitute parts must maintain compatibility across voltage rating, current capacity, thermal characteristics, and mechanical packaging to ensure direct replacement capability in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	550	V
Continuous Drain Current (Id) @ 25°C	22	A
On-State Resistance (Rds On) @ 11A, 10V	270	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	4.5	V
Gate Charge (Qg) @ 10V	170	nC
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXFH22N55 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The main part operates at 550V Vdss. Substitute parts with lower voltage ratings (500V) are acceptable for applications where the circuit maximum voltage does not exceed the substitute's rating. Substitutes must not have lower voltage ratings than the application requirement.

Current Rating Compatibility: The IXFH22N55 carries 22A continuous drain current. Substitute parts with equal or higher current ratings (20A to 24A) maintain thermal and electrical performance margins. Parts rated below 22A may introduce thermal stress in high-current applications.

On-State Resistance (Rds On): The main part specifies 270mOhm @ 11A, 10V. Substitute parts with comparable or lower Rds On values (230–270mOhm range) ensure equivalent or improved conduction losses and thermal performance.

Gate Charge (Qg): The main part specifies 170nC @ 10V. Substitute parts with lower gate charge (90–150nC) reduce gate drive power requirements and switching losses, representing improved performance characteristics.

Package and Mounting: All substitutes must use TO-247-3 package configuration with Through Hole mounting to ensure mechanical and thermal interface compatibility with existing PCB designs and heatsink assemblies.

Operating Temperature Range: All substitutes maintain the -55°C to 150°C operating range, ensuring thermal compatibility across the full application envelope.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Package	Status
IXFH22N55	IXYS	550	22	270 @ 11A	170 @ 10V	300	TO-247-3	Obsolete
IRFP460PBF	Vishay Siliconix	500	20	270 @ 12A	210 @ 10V	280	TO-247-3	Active
APT24F50B	Microchip Technology	500	24	240 @ 11A	90 @ 10V	335	TO-247-3	Active
IRFP22N50APBF	Vishay Siliconix	500	22	230 @ 13A	120 @ 10V	277	TO-247-3	Active
IRFP23N50LPBF	Vishay Siliconix	500	23	235 @ 14A	150 @ 10V	370	TO-247-3	Active
IRFP460APBF	Vishay Siliconix	500	20	270 @ 12A	105 @ 10V	280	TO-247-3	Active
IRFP460LC	Vishay Siliconix	500	20	270 @ 12A	120 @ 10V	280	TO-247-3	Active
IRFP460LCPBF	Vishay Siliconix	500	20	270 @ 12A	120 @ 10V	280	TO-247-3	Active
SIHG22N50D-E3	Vishay Siliconix	500	22	230 @ 11A	98 @ 10V	312	TO-247-3	Active
SIHG22N50D-GE3	Vishay Siliconix	500	22	230 @ 11A	98 @ 10V	312	TO-247-3	Active
STW19NM50N	STMicroelectronics	500	14	250 @ 7A	34 @ 10V	110	TO-247-3	Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

IRFP22N50APBF and SIHG22N50D-E3 / SIHG22N50D-GE3 are the most suitable direct replacements. These parts maintain the 22A current rating of the original IXFH22N55, operate at 500V (acceptable for applications designed for 550V operation with appropriate circuit margin analysis), and feature improved on-state resistance (230mOhm) and reduced gate charge (98–120nC). All three parts carry Active product status and RoHS3 compliance, ensuring long-term availability and regulatory alignment.

Secondary Substitutes (Current-Rated Alternatives):

APT24F50B provides superior current capacity (24A) with improved Rds On (240mOhm) and significantly reduced gate charge (90nC), resulting in lower switching losses. This part is suitable for applications requiring enhanced thermal margin or lower drive power. IRFP23N50LPBF offers 23A current rating with comparable electrical characteristics and higher power dissipation capability (370W).

Lower-Current Alternatives (Derating Applications):

IRFP460PBF, IRFP460APBF, IRFP460LC, and IRFP460LCPBF are rated for 20A continuous current. These parts are suitable only for applications where the circuit current requirement does not exceed 20A. STW19NM50N is rated for 14A and is appropriate only for significantly derated applications; this part features the lowest gate charge (34nC) and is suitable for high-frequency switching applications with reduced current demands.

Compliance and Availability:

All recommended substitutes carry Active product status, ensuring continued manufacturing and supply chain availability. IRFP22N50APBF, SIHG22N50D-E3, SIHG22N50D-GE3, APT24F50B, and IRFP23N50LPBF are RoHS3 compliant. IRFP460LC is RoHS non-compliant and should be avoided in applications requiring regulatory compliance. IRFP460LCPBF is RoHS3 compliant and represents the compliant variant of the IRFP460LC series.

Frequently Asked Questions (FAQ)

Q: Can I use a 500V-rated MOSFET to replace the 550V IXFH22N55?

A: Yes, provided the application circuit maximum voltage does not exceed 500V. The 50V voltage margin reduction must be evaluated against the circuit's overvoltage transient profile and safety margins. For applications with strict 550V requirements or high transient voltage conditions, a 550V-rated substitute must be sourced or the circuit redesigned to accommodate the lower voltage rating.

Q: What is the impact of using a lower-current-rated substitute?

A: Substituting with a lower-current-rated part (such as 20A for a 22A application) increases junction temperature and reduces thermal margin. This is acceptable only if the actual circuit current demand is confirmed to remain below the substitute's rating with adequate safety margin. Thermal analysis of the specific application is required before implementation.

Q: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge reduces gate drive power dissipation and enables faster switching transitions. Substitutes with lower Qg (such as APT24F50B at 90nC or SIHG22N50D-E3 at 98nC) improve overall circuit efficiency and reduce EMI, but require verification that the gate drive circuit can supply the required charge within the desired switching time.

Q: Are all substitute parts pin-compatible with the IXFH22N55?

A: Yes. All listed substitutes use the TO-247-3 package with identical pin configuration (Gate, Drain, Source). Mechanical mounting and thermal interface compatibility are preserved. PCB layout modifications are not required for package compatibility.

Q: What is the difference between IRFP460PBF and IRFP460APBF?

A: Both parts are rated for 500V, 20A, and feature identical electrical characteristics (270mOhm Rds On, 280W power dissipation). The primary difference is gate charge specification: IRFP460PBF specifies 210nC while IRFP460APBF specifies 105nC. IRFP460APBF offers superior switching performance with lower gate drive requirements. Both are Active status and RoHS3 compliant.

Q: Can I use SIHG22N50D-E3 and SIHG22N50D-GE3 interchangeably?

A: Yes. Both parts are electrically and mechanically identical, with identical electrical specifications (500V, 22A, 230mOhm Rds On, 98nC gate charge, 312W power dissipation). The suffix difference (-E3 versus -GE3) reflects manufacturing date code or internal traceability designation. Both are Active status and RoHS3 compliant. Selection between them is based on inventory availability and supplier preference.

Q: Is STW19NM50N suitable for my 22A application?

A: No. STW19NM50N is rated for 14A continuous current and is unsuitable for applications requiring 22A operation. This part should be considered only for applications where the actual current demand is confirmed to be 14A or lower. Using this part in a 22A application will result in excessive junction temperature and device failure.

Q: What compliance certifications should I verify before selecting a substitute?

A: Verify RoHS3 compliance status if the application or end-market requires lead-free manufacturing. All recommended primary substitutes (IRFP22N50APBF, SIHG22N50D-E3, SIHG22N50D-GE3, APT24F50B) are RoHS3 compliant. Verify REACH compliance status if the application is subject to REACH regulations. All listed parts carry REACH Unaffected or REACH Affected status as specified in the provided data.

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