IXFH22N50P N-Channel 500V 22A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH22N50P is an N-Channel 500V 22A MOSFET manufactured by IXYS in the HiPerFET™ series. This device is rated for 350W maximum power dissipation and operates across the temperature range of -55°C to 150°C. The part is housed in a TO-247AD through-hole package and maintains Active product status with full RoHS3 compliance.

Substitute parts are necessary when the primary part experiences extended lead times, inventory constraints, or when design flexibility permits selection from equivalent alternatives that meet the same electrical and mechanical specifications. All substitute parts listed maintain identical voltage ratings, compatible current ratings, matching package form factors, and equivalent thermal characteristics.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	22	A
On-State Resistance (Rds On) @ 11A, 10V	270	mOhm
Gate Threshold Voltage (Vgs(th)) @ 2.5mA	5.5	V
Gate Charge (Qg) @ 10V	50	nC
Input Capacitance (Ciss) @ 25V	2630	pF
Maximum Power Dissipation (Tc)	350	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247AD	Through Hole
FET Technology	N-Channel MOSFET	Metal Oxide

Substitute Part Grouping Explanation

Substitution eligibility is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 500V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET Metal Oxide (exact match required)
Mounting Type: Through Hole (exact match required)
Package Family: TO-247 series (mechanical compatibility required)
Operating Temperature Range: -55°C to 150°C minimum (exact match or superior range required)
RoHS3 Compliance: Required for all substitutes

Secondary Compatibility Parameters:

Continuous Drain Current (Id): 20A to 24A acceptable range (maintains circuit functionality)
On-State Resistance (Rds On): 235mOhm to 380mOhm (within thermal design margins)
Gate Threshold Voltage (Vgs(th)): 4V to 5.5V (within gate drive compatibility)
Maximum Gate Voltage (Vgs): ±20V to ±30V (gate drive circuit compatibility)
Power Dissipation: 110W to 370W (thermal management dependent on application)

All substitute parts listed meet the primary criteria. Secondary parameters vary within acceptable engineering tolerances for N-Channel 500V MOSFET applications.

Parameter Comparison

Parameter	IXFH22N50P	IRFP23N50LPBF	APT24F50B	IRFP460APBF	IRFP460LCPBF	IRFP460PBF	SIHG20N50C-E3	STW14NK50Z	STW19NM50N	STW20NK50Z
Manufacturer	IXYS	Vishay Siliconix	Microchip Technology	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	500	500	500	500	500	500	500	500	500	500
Id @ 25°C (A)	22	23	24	20	20	20	20	14	14	17
Rds On (mOhm)	270 @ 11A	235 @ 14A	240 @ 11A	270 @ 12A	270 @ 12A	270 @ 12A	270 @ 10A	380 @ 6A	250 @ 7A	270 @ 8.5A
Vgs(th) (V)	5.5 @ 2.5mA	5 @ 250µA	5 @ 1mA	4 @ 250µA	4 @ 250µA	4 @ 250µA	5 @ 250µA	4.5 @ 100µA	4 @ 250µA	4.5 @ 100µA
Qg (nC)	50 @ 10V	150 @ 10V	90 @ 10V	105 @ 10V	120 @ 10V	210 @ 10V	76 @ 10V	92 @ 10V	34 @ 10V	119 @ 10V
Ciss (pF)	2630 @ 25V	3600 @ 25V	3630 @ 25V	3100 @ 25V	3600 @ 25V	4200 @ 25V	2942 @ 25V	2000 @ 25V	1000 @ 50V	2600 @ 25V
Pd Max (W)	350	370	335	280	280	280	250	150	110	190
Tj Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150	to 150
Package	TO-247AD	TO-247AC	TO-247 [B]	TO-247AC	TO-247AC	TO-247AC	TO-247AC	TO-247-3	TO-247-3	TO-247-3
RoHS3 Status	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant
Product Status	Active	Active	Active	Active	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

Tier 1 Direct Substitutes (Highest Compatibility):

IRFP23N50LPBF and APT24F50B are the primary alternatives to the IXFH22N50P. Both devices maintain 500V Vdss rating, deliver continuous drain current within 1A of the original specification (23A and 24A respectively), and provide superior power dissipation ratings (370W and 335W). Both parts are RoHS3 compliant with Active product status. IRFP23N50LPBF offers lower on-state resistance (235mOhm) and higher current capacity. APT24F50B provides the highest current rating (24A) with moderate on-state resistance (240mOhm). Both are suitable for direct replacement in applications where the original 22A rating is not a hard constraint.

Tier 2 Functional Substitutes (Current Derating Required):

IRFP460APBF, IRFP460LCPBF, IRFP460PBF, and SIHG20N50C-E3 operate at 20A continuous drain current, representing a 2A reduction from the IXFH22N50P specification. These parts maintain identical 500V Vdss rating and are suitable for applications where 20A operation is acceptable. IRFP460PBF has the highest inventory availability (31,634 pieces) and is RoHS3 compliant with REACH Unaffected status. SIHG20N50C-E3 offers the lowest gate charge (76nC) among 20A alternatives, beneficial for high-frequency switching applications.

Tier 3 Lower-Current Alternatives (Significant Derating):

STW14NK50Z, STW19NM50N, and STW20NK50Z are rated at 14A, 14A, and 17A respectively. These parts are suitable only for applications where current requirements are substantially lower than the original 22A specification. STW19NM50N offers the lowest gate charge (34nC) and lowest input capacitance (1000pF @ 50V), making it advantageous for high-frequency gate drive circuits despite reduced current capacity. STW20NK50Z provides 17A operation with moderate gate charge (119nC).

Compliance and Regulatory Status:

All substitute parts maintain RoHS3 compliance. IRFP23N50LPBF and IRFP460LCPBF carry REACH Affected status, while remaining substitutes are REACH Unaffected. Selection should account for supply chain and regulatory requirements specific to the application region.

Frequently Asked Questions (FAQ)

Q: Can IRFP23N50LPBF directly replace IXFH22N50P without circuit modification?

A: IRFP23N50LPBF is mechanically and electrically compatible with IXFH22N50P. Both devices share 500V Vdss rating, TO-247 package family, and -55°C to 150°C operating range. The 1A higher current rating (23A vs 22A) and lower on-state resistance (235mOhm vs 270mOhm) represent performance improvements. Gate threshold voltage differs slightly (5V vs 5.5V), which is within acceptable gate drive circuit tolerances. No circuit modification is required.

Q: What is the significance of the gate charge (Qg) difference between IXFH22N50P and substitute parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. IXFH22N50P has 50nC gate charge, among the lowest in the substitute list. Higher gate charge values (such as IRFP460PBF at 210nC) require more gate drive current and increase switching losses. Lower gate charge values (such as STW19NM50N at 34nC) reduce gate drive requirements and switching losses. Selection depends on gate driver circuit capability and switching frequency requirements.

Q: Are TO-247AD and TO-247AC packages mechanically interchangeable?

A: TO-247AD and TO-247AC are both three-lead through-hole packages with identical pin spacing and mounting hole patterns. They are mechanically interchangeable on PCBs designed for TO-247 family devices. Minor variations in lead geometry do not affect circuit board assembly or electrical performance. All substitute parts listed use TO-247 family packaging compatible with IXFH22N50P footprints.

Q: Which substitute part is best for high-frequency switching applications?

A: STW19NM50N offers the lowest gate charge (34nC) and lowest input capacitance (1000pF), making it optimal for high-frequency switching. However, this part is rated at 14A continuous current, requiring significant derating from the original 22A specification. For applications requiring both high-frequency operation and higher current capacity, SIHG20N50C-E3 provides a compromise with 76nC gate charge, 2942pF input capacitance, and 20A current rating.

Q: What is the impact of on-state resistance (Rds On) variation on thermal performance?

A: On-state resistance directly affects power dissipation through the relationship P = I²R. Lower Rds On values reduce conduction losses and heat generation. IRFP23N50LPBF (235mOhm) generates less heat than IXFH22N50P (270mOhm) at equivalent current levels. Conversely, STW14NK50Z (380mOhm) generates significantly more heat. Thermal design must account for these differences, particularly in applications operating near maximum current ratings.

Q: Can lower-current parts like STW14NK50Z be used in IXFH22N50P applications?

A: STW14NK50Z can be used only if the application current requirement does not exceed 14A. The 8A reduction from the original 22A specification represents substantial derating. This approach is acceptable for applications with known current margins or where the original design included significant safety factors. Thermal performance improves due to lower power dissipation (150W vs 350W maximum).

Q: What inventory considerations should influence substitute part selection?

A: IRFP460PBF has the highest inventory availability (31,634 pieces), followed by SIHG20N50C-E3 (23,400 pieces) and IRFP23N50LPBF (15,301 pieces). High inventory availability reduces lead time risk and supports supply chain continuity. Parts with lower inventory (STW19NM50N at 2,443 pieces) may experience longer procurement cycles. Selection should balance electrical compatibility with supply chain reliability.

Q: Are all substitute parts suitable for industrial temperature range applications?

A: All substitute parts maintain -55°C to 150°C operating temperature range except STW19NM50N and STW20NK50Z, which specify only "to 150°C" without explicit lower temperature limit. For applications requiring full -55°C to 150°C operation, IXFH22N50P, IRFP23N50LPBF, APT24F50B, IRFP460 variants, and SIHG20N50C-E3 are fully qualified. Verification of lower temperature specifications for STMicroelectronics parts is recommended for critical applications.

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