IXFH21N50 N-Channel 500V 21A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH21N50 is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 21A continuous drain current at 25°C. This device is packaged in TO-247AD through-hole configuration and is part of the HiPerFET™ series. The part carries a Last Time Buy product status, indicating that IXYS has discontinued this model. Identifying equivalent and substitute parts is necessary to ensure design continuity and maintain supply chain reliability for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	21	A
On-State Resistance (Rds On) @ 10.5A, 10V	250	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	4	V
Gate Charge (Qg) @ 10V	160	nC
Input Capacitance (Ciss) @ 25V	4200	pF
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXFH21N50 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must equal or exceed 21A at 25°C
Package Type: TO-247-3 through-hole configuration
Operating Temperature Range: Must support -55°C to 150°C
Gate Drive Voltage: 10V nominal operation

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance; values at or below 250mOhm are preferred
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements

Substitute parts are grouped into three categories:

Direct Equivalents (Same Manufacturer): IXYS parts with identical or superior electrical ratings within the HiPerFET™ series
Cross-Manufacturer Equivalents: Parts from Vishay Siliconix and Infineon Technologies meeting or exceeding all primary criteria
Functional Alternatives: Parts with higher current ratings or improved thermal performance that maintain voltage and package compatibility

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
IXFH21N50	IXYS	500	21	250	160	4200	300	TO-247-3	Last Time Buy
IXFH22N50P	IXYS	500	22	270	50	2630	350	TO-247-3	Active
IXFH26N50P3	IXYS	500	26	230	42	2220	500	TO-247-3	Active
IRFP460PBF	Vishay Siliconix	500	20	270	210	4200	280	TO-247-3	Active
IRFP23N50LPBF	Vishay Siliconix	500	23	235	150	3600	370	TO-247-3	Active
IRFP460APBF	Vishay Siliconix	500	20	270	105	3100	280	TO-247-3	Active
IRFP460LC	Vishay Siliconix	500	20	270	120	3600	280	TO-247-3	Active
IRFP460LCPBF	Vishay Siliconix	500	20	270	120	3600	280	TO-247-3	Active
IRFP448PBF	Vishay Siliconix	500	11	600	84	1900	180	TO-247-3	Active
IPW50R140CPFKSA1	Infineon Technologies	550	23	140	64	2540	192	TO-247-3	Last Time Buy
IPW50R250CPFKSA1	Infineon Technologies	500	13	250	36	1420	114	TO-247-3	Active

Engineering Selection Recommendations

Recommended Primary Substitutes:

IXFH26N50P3 (IXYS) — This part is the optimal substitute within the same manufacturer family. It maintains 500V Vdss rating, exceeds the 21A current requirement at 26A, and offers superior on-state resistance (230mOhm vs. 250mOhm). The part is in Active product status, ensuring long-term availability. Gate charge is significantly reduced (42nC vs. 160nC), resulting in lower switching losses. RoHS3 compliance and REACH Unaffected status match the original part.

IXFH22N50P (IXYS) — This alternative provides a direct upgrade path within the HiPerFET™ series. With 22A continuous current and 500V rating, it meets minimum substitution requirements. The part is Active and offers improved gate charge characteristics (50nC). Power dissipation capability increases to 350W. RoHS3 compliant.

IRFP23N50LPBF (Vishay Siliconix) — This cross-manufacturer substitute provides 23A continuous current at 500V, exceeding the original 21A specification. On-state resistance is superior at 235mOhm. The part is in Active status with robust inventory availability (15,301 units). Power dissipation reaches 370W. RoHS3 compliant. Note: REACH Status is listed as Affected; verify compliance requirements for your application.

IRFP460APBF (Vishay Siliconix) — This variant offers 20A continuous current at 500V with improved gate charge (105nC vs. 160nC). Active product status ensures supply continuity. RoHS3 compliant and REACH Unaffected. Suitable for applications where current margin below 21A is acceptable.

Secondary Alternatives:

IPW50R140CPFKSA1 (Infineon Technologies CoolMOS™) — This part provides 23A at 550V with significantly lower on-state resistance (140mOhm). However, it carries Last Time Buy status, limiting long-term availability. Power dissipation is lower at 192W, which may be a constraint in high-power applications. Use only if thermal performance improvement justifies supply risk.

Not Recommended:

IRFP448PBF — This part provides only 11A continuous current, falling below the 21A requirement of the original IXFH21N50. Substitution is not viable for applications requiring the full 21A rating.

IPW50R250CPFKSA1 — This part provides only 13A continuous current, insufficient for 21A applications.

Frequently Asked Questions (FAQ)

Q: Can I use IRFP460PBF as a direct replacement for IXFH21N50?

A: IRFP460PBF provides 20A continuous current, which is below the 21A specification of the IXFH21N50. While the 500V rating and TO-247-3 package are compatible, the current rating shortfall makes this a marginal substitute. For applications requiring the full 21A capability, IRFP23N50LPBF or IXFH26N50P3 are preferred.

Q: What is the difference between IRFP460PBF, IRFP460APBF, IRFP460LC, and IRFP460LCPBF?

A: All four variants share identical electrical ratings (500V, 20A, 270mOhm Rds On). Differences exist in gate charge specifications and RoHS compliance status. IRFP460APBF and IRFP460LCPBF are RoHS3 compliant. IRFP460LC is RoHS non-compliant. Gate charge varies between 105nC and 120nC, affecting switching speed. For new designs, IRFP460APBF or IRFP460LCPBF are preferred.

Q: Why does IXFH22N50P have lower gate charge (50nC) than IXFH21N50 (160nC) despite similar current ratings?

A: Gate charge is determined by the specific die design and process technology within a manufacturer's product line. IXFH22N50P represents a newer generation within the HiPerFET™ family with optimized gate structure, resulting in reduced switching losses and improved efficiency.

Q: Is the TO-247AD package of IXFH21N50 compatible with TO-247AC packages used by Vishay parts?

A: Both TO-247AD and TO-247AC are variants of the TO-247-3 package family with identical pin configurations and mechanical dimensions. They are mechanically and electrically interchangeable in PCB layouts. Verify with your PCB design to confirm no custom mechanical features conflict with the substitute part.

Q: Can I substitute IXFH21N50 with IPW50R140CPFKSA1 for improved thermal performance?

A: IPW50R140CPFKSA1 offers superior on-state resistance (140mOhm vs. 250mOhm), reducing conduction losses. However, this part carries Last Time Buy status, creating supply chain risk. Additionally, power dissipation is lower at 192W compared to 300W, which may limit application scope. Use this substitute only if thermal improvement is critical and supply risk is acceptable for your project timeline.

Q: What compliance certifications should I verify when switching from IXFH21N50 to a substitute?

A: Verify RoHS compliance status (RoHS3 Compliant vs. non-compliant), REACH status (Unaffected vs. Affected), and ECCN classification. All recommended substitutes maintain RoHS3 compliance and REACH Unaffected status, except IRFP23N50LPBF (REACH Affected). Confirm your application requirements before finalizing part selection.

Q: Why is IXFH26N50P3 recommended over IXFH22N50P?

A: IXFH26N50P3 provides superior electrical performance across multiple parameters: higher current rating (26A vs. 22A), lower on-state resistance (230mOhm vs. 270mOhm), lower gate charge (42nC vs. 50nC), and higher power dissipation capability (500W vs. 350W). Both parts are in Active status. IXFH26N50P3 offers greater design margin and efficiency improvement.

Q: Are there any gate drive voltage differences between the IXFH21N50 and its substitutes?

A: All recommended substitutes operate at 10V gate drive voltage, matching the original IXFH21N50. Maximum gate voltage ratings vary (±20V to ±30V), but this does not affect standard 10V drive circuits. Verify gate threshold voltage (Vgs(th)) specifications if using marginal gate drive voltages below 10V.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message