IXFH20N80Q N-Channel 800V 20A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH20N80Q is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage and 20A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a TO-247AD through-hole package. The part is classified as obsolete, making equivalent and substitute components necessary for ongoing system support and new design alternatives.

The IXFH20N80Q is designed for high-voltage switching applications requiring robust performance across industrial and power conversion circuits. Due to its obsolete status, identifying functionally compatible alternatives ensures design continuity and supply chain flexibility.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	20	A
On-State Resistance (Rds On) @ 10A, 10V	420	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	4.5	V
Gate Charge (Qg) @ 10V	200	nC
Input Capacitance (Ciss) @ 25V	5100	pF
Power Dissipation (Max)	360	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247AD	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IXFH20N80Q is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 800V
Continuous Drain Current (Id): Must equal or exceed 20A at 25°C
Gate Drive Voltage: Must support 10V operation
Operating Temperature Range: Must span -55°C to 150°C
Package Type: Through-hole mounting (TO-247 variants acceptable)
FET Type: N-Channel MOSFET technology

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation Rating: Must support application thermal requirements

Substitute parts are grouped into two categories:

Category A – Direct Electrical Equivalents (Vdss ≥ 800V, Id ≥ 20A): These parts maintain the full voltage and current ratings of the IXFH20N80Q with package variations.

Category B – Functional Alternatives (Vdss ≥ 800V, Id ≥ 11A): These parts operate at the same voltage rating but with reduced current capacity. Selection requires application-level current analysis to confirm suitability.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
IXFH20N80Q	IXYS	800	20	420 @ 10A	200 @ 10V	5100 @ 25V	360	TO-247AD	Obsolete
IXFP20N85X	IXYS	850	20	330 @ 500mA	63 @ 10V	1660 @ 25V	540	TO-220-3	Active
APT11N80BC3G	Microchip Technology	800	11	450 @ 7.1A	60 @ 10V	1585 @ 25V	156	TO-247	Active
IRFPC50APBF	Vishay Siliconix	600	11	580 @ 6A	70 @ 10V	2100 @ 25V	180	TO-247AC	Active
IRFPC50LCPBF	Vishay Siliconix	600	11	600 @ 6.6A	84 @ 10V	2300 @ 25V	190	TO-247AC	Active
IRFPC50PBF	Vishay Siliconix	600	11	600 @ 6A	140 @ 10V	2700 @ 25V	180	TO-247AC	Active
SIHG11N80E-GE3	Vishay Siliconix	800	12	440 @ 5.5A	88 @ 10V	1670 @ 100V	179	TO-247AC	Active
SPW11N80C3FKSA1	Infineon Technologies	800	11	450 @ 7.1A	85 @ 10V	1600 @ 100V	156	TO-247-3	Not For New Designs
SPW17N80C3FKSA1	Infineon Technologies	800	17	290 @ 11A	177 @ 10V	2320 @ 25V	227	TO-247-3	Active
STW11NM80	STMicroelectronics	800	11	400 @ 5.5A	43.6 @ 10V	1630 @ 25V	150	TO-247-3	Active
STW12NK80Z	STMicroelectronics	800	10.5	750 @ 5.25A	87 @ 10V	2620 @ 25V	190	TO-247-3	Active

Engineering Selection Recommendations

Category A – Direct Electrical Equivalents:

IXFP20N85X (IXYS) – Active Status This part maintains the 20A continuous drain current specification and exceeds the 800V voltage rating at 850V. The IXFP20N85X operates in the HiPerFET™ Ultra X series and is actively manufactured. Package transition from TO-247AD to TO-220-3 requires PCB layout modification. RoHS3 compliance and MSL 1 rating support modern manufacturing environments. Gate charge reduction (63 nC vs. 200 nC) improves switching efficiency.

Category B – Functional Alternatives (Reduced Current Capacity):

SPW17N80C3FKSA1 (Infineon Technologies) – Active Status This CoolMOS™ device provides 17A continuous drain current at 800V, approaching the original 20A specification. Active product status ensures long-term availability. TO-247-3 package compatibility with standard through-hole mounting. RoHS3 and REACH compliance confirmed. Gate charge of 177 nC remains within acceptable switching loss parameters for most applications.

APT11N80BC3G (Microchip Technology) – Active Status Rated for 11A at 800V with TO-247 package compatibility. Active product status and RoHS3 compliance support new designs. Lower power dissipation (156W) suits thermally constrained applications. Gate charge of 60 nC provides efficient switching characteristics.

STW11NM80 (STMicroelectronics) – Active Status MDmesh™ technology delivers 11A at 800V with lowest gate charge (43.6 nC) among 11A alternatives. Extended operating temperature range (-65°C to 150°C) exceeds original specification. RoHS3 and REACH compliance confirmed. TO-247-3 package standard.

SIHG11N80E-GE3 (Vishay Siliconix) – Active Status Provides 12A at 800V with 440 mOhm on-state resistance. Active product status and RoHS3 compliance. TO-247AC package variant. Gate charge of 88 nC supports moderate switching frequencies.

Parts Not Recommended for New Designs:

SPW11N80C3FKSA1 (Infineon Technologies) – Not For New Designs Status Although functionally compatible at 11A/800V, this part carries "Not For New Designs" designation. Existing inventory may support legacy system maintenance only.

Parts with Voltage Derating:

IRFPC50APBF, IRFPC50LCPBF, IRFPC50PBF (Vishay Siliconix) – 600V Rating These parts operate at 600V, representing a 200V reduction from the original 800V specification. Selection requires application-level voltage margin analysis. Suitable only for systems with maximum operating voltage below 600V.

Frequently Asked Questions (FAQ)

Q: Can the IXFP20N85X directly replace the IXFH20N80Q without circuit modification?

A: The IXFP20N85X maintains electrical equivalence (20A/850V) but requires PCB layout changes due to package transition from TO-247AD to TO-220-3. Pin configuration differs; mechanical mounting and thermal interface design must be re-evaluated. Gate charge reduction (63 nC vs. 200 nC) may improve switching performance but requires gate drive circuit verification.

Q: What is the minimum current rating acceptable for substitution?

A: The IXFH20N80Q operates at 20A continuous drain current. Substitutes with 17A (SPW17N80C3FKSA1) approach this specification. Parts rated below 17A (11A-12A range) are functional alternatives only when application current demand is confirmed below their ratings. System thermal and electrical stress analysis is required.

Q: Are all substitute parts RoHS3 compliant?

A: All active-status substitute parts listed carry RoHS3 compliance certification. SPW11N80C3FKSA1, designated "Not For New Designs," also maintains RoHS3 compliance but is restricted from new design implementation. REACH compliance is confirmed for all Infineon and STMicroelectronics parts; Vishay parts carry REACH Unaffected status.

Q: How does package type affect substitution?

A: The original IXFH20N80Q uses TO-247AD packaging. Substitute parts employ TO-247-3, TO-220-3, or TO-247AC variants. All are through-hole packages with similar thermal and electrical characteristics but different pin layouts and mechanical footprints. PCB redesign is necessary for any package transition. Thermal interface design (heatsink mounting) may require adjustment due to package geometry differences.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge directly impacts switching speed and gate drive power requirements. The IXFH20N80Q specifies 200 nC at 10V. Substitute parts range from 43.6 nC (STW11NM80) to 177 nC (SPW17N80C3FKSA1). Lower gate charge reduces switching losses and simplifies gate drive circuit design. Higher gate charge may require gate drive circuit optimization to maintain switching frequency performance.

Q: Can parts rated at 600V (IRFPC50 series) be used in 800V applications?

A: No. The IRFPC50 series is rated for maximum 600V drain-to-source voltage. Use in 800V applications violates device ratings and creates reliability risk. These parts are suitable only for applications with confirmed maximum operating voltage below 600V.

Q: What is the difference between "Active" and "Not For New Designs" product status?

A: Active parts are currently manufactured and supported for new design implementation with guaranteed long-term availability. "Not For New Designs" parts remain available for legacy system support but are not recommended for new circuit designs. SPW11N80C3FKSA1 carries this designation; existing inventory may support maintenance applications only.

Q: How do on-state resistance (Rds On) variations affect circuit performance?

A: On-state resistance determines conduction losses and heat dissipation. The IXFH20N80Q specifies 420 mOhm at 10A/10V. Lower Rds On values (e.g., 290 mOhm for SPW17N80C3FKSA1) reduce power loss and thermal stress. Higher values (e.g., 750 mOhm for STW12NK80Z) increase conduction losses. Selection depends on application thermal budget and efficiency requirements.

Q: Are moisture sensitivity levels (MSL) important for component handling?

A: Yes. The IXFH20N80Q specifies MSL as "Not Applicable" (through-hole package). All substitute parts carry MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. This simplifies storage and handling procedures for substitute components.

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