IXFH20N80P Equivalent & Substitute Parts

Part Overview

The IXFH20N80P is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage and 20A continuous drain current at 25°C. This device operates within the HiPerFET™ series and is housed in a TO-247AD through-hole package. The part is currently Active in product status with 2179 units in stock.

Substitute parts are necessary when the IXFH20N80P becomes unavailable, when design requirements shift toward alternative manufacturers, or when inventory constraints require sourcing from alternative suppliers. The substitute devices listed maintain compatibility through equivalent electrical ratings and identical through-hole packaging, enabling direct replacement in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	20	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	520	mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs	86	nC @ 10V
Power Dissipation (Max)	500	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	TO-247AD
FET Type	N-Channel	MOSFET
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH20N80P is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Minimum 800V
Continuous Drain Current (Id): Minimum 20A at 25°C
Mounting Type: Through-hole TO-247 package family
FET Type: N-Channel MOSFET
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance: Required

Secondary Compatibility Parameters:

Drive Voltage: 10V gate drive capability
Gate Charge (Qg): Comparable switching characteristics
On-State Resistance (Rds On): Performance consideration for thermal management

The substitute parts listed below meet the primary substitution criteria. However, variations in secondary parameters indicate performance trade-offs that must be evaluated against specific application requirements.

Parameter Comparison

Parameter	IXFH20N80P	IRFPC50APBF	SPW11N80C3FKSA1	STW11NM80
Manufacturer	IXYS	Vishay Siliconix	Infineon Technologies	STMicroelectronics
Vdss (V)	800	600	800	800
Id @ 25°C (A)	20	11	11	11
Rds On (Max) (mOhm)	520 @ 10A, 10V	580 @ 6A, 10V	450 @ 7.1A, 10V	400 @ 5.5A, 10V
Gate Charge Qg (nC)	86 @ 10V	70 @ 10V	85 @ 10V	43.6 @ 10V
Power Dissipation (W)	500	180	156	150
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-65 to 150
Package	TO-247AD	TO-247AC	PG-TO247-3-1	TO-247-3
Product Status	Active	Active	Not For New Designs	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFPC50APBF (Vishay Siliconix)

This device is rated for 600V Vdss, which is below the 800V specification of the IXFH20N80P. The continuous drain current is 11A, representing a 45% reduction from the primary part. This substitute is suitable only for applications where the circuit operates at voltages below 600V and current requirements do not exceed 11A. The part maintains Active product status and ROHS3 compliance. Use this substitute only when voltage and current derating are acceptable for the target application.

SPW11N80C3FKSA1 (Infineon Technologies)

This device matches the 800V Vdss rating and maintains the TO-247 package family compatibility. However, the continuous drain current is 11A, a 45% reduction from the primary part. The part is designated "Not For New Designs," indicating Infineon has discontinued active development and support. This substitute is acceptable only for legacy system maintenance or when existing inventory must be replaced. New designs should avoid this part.

STW11NM80 (STMicroelectronics)

This device matches the 800V Vdss rating and maintains the TO-247-3 package compatibility. The continuous drain current is 11A, a 45% reduction from the primary part. The part maintains Active product status and ROHS3 compliance. The operating temperature range extends to -65°C, providing enhanced low-temperature performance. This substitute is suitable for applications where 11A continuous current is sufficient and the 800V rating is required.

Recommendation Summary:

For direct replacement in applications requiring the full 20A continuous current rating at 800V, no equivalent substitute exists among the listed parts. All substitute devices operate at reduced current ratings (11A maximum). Selection should be based on whether the application can tolerate current derating. STW11NM80 is preferred for new designs due to Active product status. IRFPC50APBF is suitable only for applications operating below 600V.

Frequently Asked Questions (FAQ)

Q: Can IRFPC50APBF replace IXFH20N80P in all applications?

A: No. IRFPC50APBF is rated for 600V maximum Vdss, while IXFH20N80P is rated for 800V. This substitute is only suitable for circuits operating at 600V or below. Additionally, the continuous drain current is reduced to 11A versus 20A, requiring current derating analysis.

Q: What is the significance of "Not For New Designs" status for SPW11N80C3FKSA1?

A: This designation indicates that Infineon has discontinued active development and support for this device. While the part may function as a substitute, it should not be selected for new circuit designs. This status is appropriate only for legacy system maintenance or replacement of existing inventory.

Q: Are the TO-247AD, TO-247AC, and TO-247-3 packages mechanically interchangeable?

A: All three packages are members of the TO-247 family and share identical pin spacing and mounting hole patterns. They are mechanically interchangeable in through-hole applications. However, minor variations in lead geometry may exist between manufacturers. Verify PCB footprint compatibility with the specific package variant before assembly.

Q: Why do all substitute parts have lower continuous drain current ratings?

A: The IXFH20N80P is rated for 20A continuous current, which is a higher specification than the substitute devices listed (all rated at 11A maximum). No direct equivalent with identical current rating exists among the available substitutes. Applications requiring 20A must either use the original part or redesign the circuit to operate at reduced current levels.

Q: Which substitute part is recommended for new designs?

A: STW11NM80 is recommended for new designs among the listed substitutes. It maintains Active product status, ROHS3 compliance, 800V Vdss rating, and extended operating temperature range (-65°C to 150°C). However, the 11A current rating requires verification against application requirements.

Q: What is the impact of different Rds On values on circuit performance?

A: On-state resistance (Rds On) directly affects power dissipation and thermal management. Lower Rds On values reduce conduction losses. STW11NM80 exhibits the lowest Rds On at 400 mOhm, followed by SPW11N80C3FKSA1 at 450 mOhm. IXFH20N80P and IRFPC50APBF have higher values at 520 mOhm and 580 mOhm respectively. Applications with tight thermal budgets should prioritize lower Rds On values.

Q: Are all listed parts RoHS3 compliant?

A: Yes. IXFH20N80P, IRFPC50APBF, SPW11N80C3FKSA1, and STW11NM80 are all ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic components.

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