IXFH18N100Q3 Equivalent & Substitute Parts

Part Overview

The IXFH18N100Q3 is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 18A continuous drain current at 25°C. Manufactured by IXYS, this device belongs to the HiPerFET™ Q3 Class series and is housed in a TO-247AD through-hole package. The component is actively produced and RoHS3 compliant, with unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent electrical and mechanical parameters allow direct replacement in circuit applications. Substitution necessity arises from inventory availability, lead time considerations, or design optimization within the specified parameter envelope.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	18	A
On-State Resistance (Rds On Max) @ Id, Vgs	660 mOhm @ 9A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	6.5	V @ 4mA
Gate Charge (Qg Max) @ Vgs	90	nC @ 10V
Power Dissipation (Max)	830	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH18N100Q3 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package Type: TO-247-3 (through-hole mounting)
Operating Temperature Range: -55°C to 150°C (TJ)
Gate Voltage Maximum: ±30V
RoHS3 Compliance
Moisture Sensitivity Level: 1 (Unlimited)

Electrical Performance Envelope:

Drain-to-Source Voltage (Vdss): Minimum 1000V
Continuous Drain Current (Id): Minimum 18A at 25°C
On-State Resistance (Rds On): Maximum 660 mOhm at rated conditions
Power Dissipation: Minimum 830W

Substitute parts must satisfy all mandatory criteria and maintain electrical performance within the specified envelope to ensure functional equivalence in the target application circuit.

Parameter Comparison

Parameter	IXFH18N100Q3	STW12N120K5	STW10N95K5
Manufacturer	IXYS	STMicroelectronics	STMicroelectronics
Drain-to-Source Voltage (Vdss)	1000 V	1200 V	950 V
Continuous Drain Current (Id) @ 25°C	18 A	12 A	8 A
Rds On (Max) @ Id, Vgs	660 mOhm @ 9A, 10V	690 mOhm @ 6A, 10V	800 mOhm @ 4A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	6.5 V @ 4mA	5 V @ 100µA	5 V @ 100µA
Gate Charge (Qg Max) @ Vgs	90 nC @ 10V	44.2 nC @ 10V	22 nC @ 10V
Power Dissipation (Max)	830 W	250 W	130 W
Operating Temperature Range	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Package Type	TO-247-3	TO-247-3	TO-247-3
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Active

Engineering Selection Recommendations

STW12N120K5 (STMicroelectronics MDmesh™ K5 Series)

The STW12N120K5 provides higher voltage rating (1200V) compared to the IXFH18N100Q3 (1000V), enabling operation in higher voltage applications. Continuous drain current is reduced to 12A, and power dissipation capability is 250W. This device is suitable for applications where voltage headroom is required and current demand does not exceed 12A. All compliance certifications (RoHS3, REACH Unaffected, MSL 1) match the primary part.

STW10N95K5 (STMicroelectronics SuperMESH5™ Series)

The STW10N95K5 operates at 950V drain-to-source voltage with 8A continuous drain current and 130W power dissipation. This substitute is applicable only in circuits where current requirements do not exceed 8A and power dissipation remains below 130W. The lower voltage rating (950V) restricts use to applications with reduced voltage stress. Full compliance alignment with the primary part is maintained.

Both substitute parts are actively produced with confirmed inventory availability and meet all mandatory regulatory and environmental requirements specified for the IXFH18N100Q3.

Frequently Asked Questions (FAQ)

Q: Can STW12N120K5 directly replace IXFH18N100Q3 in all applications?

A: Direct replacement is limited to applications where continuous drain current does not exceed 12A and power dissipation remains below 250W. The higher voltage rating (1200V vs. 1000V) is compatible with circuits designed for 1000V operation. PCB layout and thermal management must accommodate the different power dissipation characteristics.

Q: What are the current limitations when using STW10N95K5 as a substitute?

A: The STW10N95K5 is rated for maximum 8A continuous drain current, compared to 18A for the IXFH18N100Q3. Applications requiring current above 8A cannot use this substitute. Additionally, the 950V voltage rating is lower than the primary part's 1000V specification.

Q: Are all three devices compatible with the same TO-247-3 footprint?

A: Yes. The IXFH18N100Q3, STW12N120K5, and STW10N95K5 all use TO-247-3 through-hole packaging, ensuring mechanical compatibility on PCBs designed for this package type.

Q: Do substitute parts require different gate drive voltage levels?

A: All three devices operate with maximum gate voltage of ±30V and are driven at 10V. Gate threshold voltages differ slightly (IXFH18N100Q3: 6.5V @ 4mA; STW12N120K5 and STW10N95K5: 5V @ 100µA), but standard gate driver circuits accommodate these variations.

Q: What is the impact of different gate charge values on circuit performance?

A: Gate charge affects switching speed and driver power consumption. The IXFH18N100Q3 has 90 nC gate charge, while STW12N120K5 has 44.2 nC and STW10N95K5 has 22 nC. Lower gate charge in substitute parts results in faster switching transitions and reduced driver power dissipation.

Q: Are all parts equally available in inventory?

A: Inventory levels differ. IXFH18N100Q3 has 2200 pieces in stock, STW12N120K5 has 8206 pieces, and STW10N95K5 has 44900 pieces. Substitute availability may influence component selection based on project timeline requirements.

Q: Do all devices meet the same environmental and compliance standards?

A: Yes. All three parts are RoHS3 compliant, REACH unaffected, classified as EAR99, and carry MSL 1 (unlimited moisture sensitivity). Operating temperature range is identical across all devices (-55°C to 150°C).

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