IXFH17N80Q Equivalent & Substitute Parts

Part Overview

The IXFH17N80Q is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 17A continuous drain current at 25°C. This device is packaged in TO-247AD and belongs to the HiPerFET™ Q Class series. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production support. Substitute parts must maintain compatibility across voltage rating, current capacity, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	17	A
On-State Resistance (Rds On) @ 10V	600	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	4.5	V
Gate Charge (Qg) @ 10V	95	nC
Power Dissipation (Max)	400	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following critical parameters:

Voltage Rating (Vdss): Substitute parts must equal or exceed 800V to maintain system voltage margin and reliability.

Continuous Drain Current (Id): Substitute parts must equal or exceed 17A at 25°C to support the same load current without thermal derating.

On-State Resistance (Rds On): Lower or equivalent resistance values ensure comparable power dissipation and thermal performance.

Gate Charge (Qg): Similar gate charge values maintain compatible gate drive circuit performance and switching speed characteristics.

Package Type: All substitutes must use TO-247-3 or compatible TO-247 variants to ensure mechanical and thermal interface compatibility.

Operating Temperature Range: Substitutes must support the full -55°C to 150°C operating window.

Product Status & Compliance: Active or Not For New Designs status with RoHS3 compliance ensures regulatory alignment and supply chain viability.

Substitutes are grouped into two categories: Direct Equivalents (matching or exceeding all critical parameters) and Functional Alternatives (meeting voltage and current requirements with acceptable trade-offs in secondary parameters).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg @ 10V (nC)	Power Diss. (W)	Package	Status
IXFH17N80Q	IXYS	800	17	600	95	400	TO-247-3	Obsolete
SPW17N80C3FKSA1	Infineon	800	17	290	177	227	TO-247-3	Active
SPW11N80C3FKSA1	Infineon	800	11	450	85	156	TO-247-3	Not For New Designs
SIHG11N80E-GE3	Vishay Siliconix	800	12	440	88	179	TO-247-3	Active
STW11NM80	STMicroelectronics	800	11	400	43.6	150	TO-247-3	Active
STW12NK80Z	STMicroelectronics	800	10.5	750	87	190	TO-247-3	Active
STW13N80K5	STMicroelectronics	800	12	450	29	190	TO-247-3	Active
STW13NK100Z	STMicroelectronics	1000	13	700	266	350	TO-247-3	Active
IRFPC50APBF	Vishay Siliconix	600	11	580	70	180	TO-247-3	Active
IRFPC50LCPBF	Vishay Siliconix	600	11	600	84	190	TO-247-3	Active
IRFPC50PBF	Vishay Siliconix	600	11	600	140	180	TO-247-3	Active

Engineering Selection Recommendations

Primary Substitute: SPW17N80C3FKSA1

The SPW17N80C3FKSA1 manufactured by Infineon is the optimal direct equivalent. It matches the IXFH17N80Q in both voltage rating (800V) and continuous drain current (17A). The part carries Active product status and RoHS3 compliance, ensuring long-term supply availability and regulatory alignment. The lower on-state resistance (290 mOhm versus 600 mOhm) provides improved thermal performance. Higher gate charge (177 nC versus 95 nC) requires gate drive circuit verification but does not preclude substitution. This part is available in production quantities (9900 units in stock).

Secondary Substitutes for Current-Reduced Applications:

When application requirements permit reduced current capacity, the following parts provide viable alternatives with active product status:

SIHG11N80E-GE3 (Vishay Siliconix): Rated for 12A continuous current at 800V. Suitable for applications where 12A meets system requirements. Active status with RoHS3 compliance. Lower gate charge (88 nC) simplifies gate drive design.

STW11NM80 (STMicroelectronics): Rated for 11A continuous current at 800V. MDmesh™ technology provides low gate charge (43.6 nC) for fast switching applications. Active status with extended temperature range (-65°C to 150°C). Suitable for designs tolerating 11A operation.

STW13N80K5 (STMicroelectronics): Rated for 12A continuous current at 800V. SuperMESH5™ technology delivers exceptionally low gate charge (29 nC) for high-frequency switching. Active status with RoHS3 compliance. Recommended for switching frequency optimization.

Not Recommended for Direct Substitution:

IRFPC50 Series (IRFPC50APBF, IRFPC50LCPBF, IRFPC50PBF): These parts are rated for 600V maximum drain-to-source voltage, which is 200V below the IXFH17N80Q specification. Use only in applications where system voltage does not exceed 600V.

STW13NK100Z: Rated for 1000V drain-to-source voltage. While voltage-compatible, the higher voltage rating introduces unnecessary cost and may alter circuit performance characteristics. Reserve for applications requiring 1000V operation.

SPW11N80C3FKSA1: Rated for 11A continuous current, below the 17A requirement. Product status is Not For New Designs. Not recommended for new designs requiring full 17A capacity.

Frequently Asked Questions (FAQ)

Q: Can IRFPC50APBF replace IXFH17N80Q in a 800V application?

A: No. IRFPC50APBF is rated for maximum 600V drain-to-source voltage. Using this part in an 800V system exceeds its voltage rating and creates reliability risk. Select a substitute rated for 800V or higher.

Q: What is the primary advantage of SPW17N80C3FKSA1 over IXFH17N80Q?

A: SPW17N80C3FKSA1 provides significantly lower on-state resistance (290 mOhm versus 600 mOhm), resulting in reduced power dissipation and improved thermal performance. Both parts match the 17A current rating and 800V voltage specification. SPW17N80C3FKSA1 carries Active product status, ensuring supply continuity.

Q: Are all substitute parts compatible with the TO-247-3 package footprint?

A: Yes. All listed substitutes use TO-247-3 or compatible TO-247 packaging. Mechanical and thermal interface compatibility is maintained. Verify gate lead polarity and pin assignment in device datasheets before PCB layout finalization.

Q: Why does STW13NK100Z have higher gate charge than IXFH17N80Q?

A: STW13NK100Z is rated for 1000V operation, requiring larger die geometry and higher input capacitance. Higher gate charge (266 nC) is a direct consequence of the higher voltage rating. This part is suitable only for applications requiring 1000V capability.

Q: Can I use STW11NM80 if my application only requires 11A?

A: Yes. STW11NM80 is rated for 11A continuous current at 800V and carries Active product status. If your circuit design operates at or below 11A, this part provides a valid substitute with improved gate charge characteristics (43.6 nC) suitable for high-frequency switching applications.

Q: What is the impact of higher gate charge on circuit design?

A: Higher gate charge requires longer gate drive pulse duration or higher gate drive current to achieve the same switching speed. Verify that your gate driver circuit can supply the required charge within acceptable switching time windows. Consult device datasheets for gate charge specifications at your operating gate voltage.

Q: Is SPW11N80C3FKSA1 suitable for new designs?

A: SPW11N80C3FKSA1 carries Not For New Designs product status. While functionally operational, Infineon does not recommend this part for new circuit development. Use SPW17N80C3FKSA1 for new designs requiring 17A at 800V.

Q: Do all substitutes maintain the same operating temperature range?

A: Most substitutes support -55°C to 150°C operation, matching IXFH17N80Q. STW11NM80 extends the lower limit to -65°C. Verify operating temperature specifications in your application requirements before final part selection.

Q: What compliance certifications apply to all listed substitutes?

A: All listed substitutes carry RoHS3 compliance and REACH Unaffected status, matching the regulatory profile of IXFH17N80Q. ECCN classification is EAR99 for all parts, with HTSUS code 8541.29.0095.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message