IXFH16N90Q N-Channel 900V 16A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH16N90Q is an N-Channel MOSFET manufactured by IXYS, rated for 900V drain-to-source voltage and 16A continuous drain current in a TO-247AD through-hole package. This device is classified as obsolete product status. Due to its obsolescence, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	16	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	650	mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs	170	nC @ 10V
Power Dissipation (Max)	360	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the IXFH16N90Q is determined by the following critical parameters:

Voltage Rating (Vdss): The substitute must equal or exceed 900V to maintain circuit protection margins and ensure safe operation under maximum voltage stress conditions.

Current Rating (Id): The substitute must equal or exceed 16A continuous drain current to handle the design load without thermal derating.

On-State Resistance (Rds On): The substitute must maintain comparable or lower on-state resistance at the specified gate voltage to preserve power dissipation characteristics and thermal performance.

Gate Charge (Qg): The substitute should maintain similar gate charge to ensure compatible gate drive circuit performance and switching speed.

Package Type: The substitute must use TO-247-3 through-hole package for mechanical and thermal compatibility with existing PCB layouts.

Operating Temperature Range: The substitute must support the -55°C to 150°C operating range to maintain functional equivalence across environmental conditions.

Product Status: Active product status is required to ensure long-term availability and supply chain continuity.

Parameter Comparison

Parameter	IXFH16N90Q	STW15NK90Z	STW12NK90Z	STW13NK100Z	STW12N120K5	STW10N95K5	SCT10N120
Manufacturer	IXYS	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	SiCFET
Vdss (V)	900	900	900	1000	1200	950	1200
Id @ 25°C (A)	16	15	11	13	12	8	12
Rds On (Max) (mOhm)	650 @ 8A, 10V	550 @ 7.5A, 10V	880 @ 5.5A, 10V	700 @ 6.5A, 10V	690 @ 6A, 10V	800 @ 4A, 10V	690 @ 6A, 20V
Qg (Max) (nC)	170 @ 10V	256 @ 10V	152 @ 10V	266 @ 10V	44.2 @ 10V	22 @ 10V	22 @ 20V
Power Dissipation (Max) (W)	360	350	230	350	250	130	150
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 200
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Compliance	—	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Primary Substitute: STW15NK90Z

The STW15NK90Z is the closest functional equivalent to the IXFH16N90Q. Both devices share identical 900V voltage rating and comparable 15A continuous drain current (94% of original specification). The STW15NK90Z maintains superior on-state resistance performance (550 mOhm versus 650 mOhm) and operates within the same -55°C to 150°C temperature range. This device is manufactured by STMicroelectronics with active product status and ROHS3 compliance, ensuring long-term availability and regulatory compliance for new designs and field replacements.

Secondary Substitute: STW13NK100Z

The STW13NK100Z provides a higher voltage rating (1000V) with 13A continuous drain current. This device is suitable for applications where voltage margin enhancement is beneficial. The 700 mOhm on-state resistance and 350W power dissipation rating maintain thermal performance comparable to the original part. Active product status and ROHS3 compliance support supply chain continuity.

Tertiary Substitute: STW12NK90Z

The STW12NK90Z matches the 900V voltage rating with 11A continuous drain current. While current rating is reduced to 69% of the original specification, this device is suitable for applications with lower current demands. The SuperMESH™ technology provides optimized switching characteristics. Active product status and ROHS3 compliance are confirmed.

Alternative for Higher Voltage Applications: STW12N120K5

The STW12N120K5 offers 1200V voltage rating with 12A continuous drain current and 250W power dissipation. This device is appropriate for designs requiring enhanced voltage margin. MDmesh™ K5 technology provides improved performance characteristics. Active product status and ROHS3 compliance are confirmed.

Note on SCT10N120 (SiCFET Technology):

The SCT10N120 represents a technology transition option using Silicon Carbide (SiCFET) instead of traditional MOSFET technology. While it provides 1200V rating and 12A current, the SiCFET technology introduces different switching characteristics and gate drive requirements. This device is suitable only for designs specifically engineered for SiCFET operation. Active product status and ROHS3 compliance are confirmed.

Note on STW10N95K5:

The STW10N95K5 provides 950V rating with only 8A continuous drain current (50% of original specification). This device is suitable only for significantly reduced current applications and is not recommended as a general substitute for the IXFH16N90Q.

Frequently Asked Questions (FAQ)

Q: Can STW15NK90Z directly replace IXFH16N90Q in existing designs?

A: The STW15NK90Z is mechanically and electrically compatible with the IXFH16N90Q. Both use TO-247-3 package and share 900V voltage rating. The 15A current rating of STW15NK90Z is 94% of the original 16A specification. Direct substitution is valid for applications operating at or below 15A continuous drain current. Gate drive circuits require no modification due to comparable gate charge characteristics.

Q: What is the difference between MOSFET and SiCFET technology in these substitutes?

A: The IXFH16N90Q and most substitute parts use traditional MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology. The SCT10N120 uses SiCFET (Silicon Carbide FET) technology, which offers lower on-state resistance and higher temperature capability but requires different gate drive circuit design. SiCFET substitution is not recommended without complete circuit redesign and validation.

Q: Why does STW12N120K5 have lower gate charge than STW15NK90Z despite higher voltage rating?

A: Gate charge is determined by die size, oxide thickness, and technology node rather than voltage rating alone. The STW12N120K5 uses MDmesh™ K5 technology optimized for lower gate charge, while STW15NK90Z uses SuperMESH™ technology. Lower gate charge reduces gate drive power consumption and enables faster switching speeds.

Q: Are all substitute parts RoHS compliant?

A: All STMicroelectronics substitute parts listed (STW15NK90Z, STW12NK90Z, STW13NK100Z, STW12N120K5, STW10N95K5, and SCT10N120) are ROHS3 compliant. The original IXFH16N90Q does not specify RoHS compliance status. ROHS3 compliance is mandatory for new designs and many field replacement applications.

Q: What is the impact of higher voltage rating substitutes on circuit performance?

A: Substitutes with higher voltage ratings (STW13NK100Z at 1000V, STW12N120K5 at 1200V, SCT10N120 at 1200V) provide increased voltage margin and enhanced circuit protection. These devices are fully backward compatible with 900V circuit designs. No circuit modification is required. Higher voltage rating does not degrade performance in 900V applications.

Q: Can I use STW10N95K5 as a substitute?

A: The STW10N95K5 is not recommended as a general substitute due to its 8A continuous drain current rating, which is only 50% of the IXFH16N90Q specification. This device is suitable only for applications with significantly reduced current requirements. Thermal performance and power dissipation capability are substantially lower (130W versus 360W).

Q: What inventory status should I consider for production planning?

A: The IXFH16N90Q is obsolete with 5720 pieces in stock. For new production, STW15NK90Z (3507 pcs), STW13NK100Z (5059 pcs), and STW12NK90Z (29400 pcs) offer the most immediate availability. STW12N120K5 (8206 pcs) and STW40N95K5 (24198 pcs) provide additional inventory depth. Confirm current availability with your component supplier before finalizing design decisions.

Q: Are there thermal management differences between substitute parts?

A: Power dissipation ratings vary among substitutes. STW15NK90Z and STW13NK100Z maintain 350W ratings comparable to the original 360W specification. STW12NK90Z provides 230W, STW12N120K5 provides 250W, and STW10N95K5 provides 130W. Thermal management requirements depend on actual operating current and duty cycle. Verify thermal design margins for your specific application.

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