IXFH16N50P N-Channel 500V 16A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH16N50P is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage and 16A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a TO-247AD through-hole package. The part is Active status and RoHS3 compliant, with 1700 units currently in stock.

Equivalent and substitute parts are identified based on matching or compatible electrical ratings and mechanical packaging specifications. Substitutes may vary in power dissipation, gate charge characteristics, and on-resistance values while maintaining functional compatibility within the specified voltage and current parameters.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	16	A (Tc)
On-Resistance (Rds On Max) @ Id, Vgs	400	mOhm @ 8A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	5.5	V @ 2.5mA
Gate Charge (Qg Max) @ Vgs	43	nC @ 10V
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution logic for the IXFH16N50P is based on the following critical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 500V or lower (500V is the primary rating)
Continuous Drain Current (Id): 16A or higher at 25°C
Package Type: TO-247-3 or compatible through-hole variants (TO-247AC, TO-247AD)
Technology: N-Channel MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 150°C (TJ)

Secondary Compatibility Factors:

On-Resistance (Rds On): Lower values indicate improved performance; values up to 400mOhm are acceptable
Gate Charge (Qg): Lower values reduce switching losses; higher values acceptable if within thermal limits
Power Dissipation: Minimum 150W required for thermal management compatibility
Compliance: RoHS3 and REACH Unaffected status required

Substitutes are grouped into two categories:

Category A - Direct Equivalents (500V, 16A): IRFP17N50LPBF maintains the 500V/16A specification with improved on-resistance (320mOhm) and lower power dissipation (220W).

Category B - Functional Alternatives (500V, 14-17A): IRFP450APBF, SIHG14N50D-GE3, and STW14NK50Z operate at 500V with 14A rating, suitable for applications where 16A is not required. STW20NK50Z provides 500V/17A with superior on-resistance (270mOhm) for higher current applications.

Category C - Reduced Voltage Alternatives (400V, 16A): IRFP350LCPBF and IRFP350PBF are rated for 400V/16A, applicable only in circuits where maximum voltage stress does not exceed 400V.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg Max (nC)	Power Diss. (W)	Package	Status
IXFH16N50P	IXYS	500	16	400 @ 8A, 10V	43 @ 10V	300	TO-247AD	Active
IRFP17N50LPBF	Vishay Siliconix	500	16	320 @ 9.9A, 10V	130 @ 10V	220	TO-247AC	Active
IRFP350LCPBF	Vishay Siliconix	400	16	300 @ 9.6A, 10V	76 @ 10V	190	TO-247AC	Active
IRFP350PBF	Vishay Siliconix	400	16	300 @ 9.6A, 10V	150 @ 10V	190	TO-247AC	Active
IRFP450APBF	Vishay Siliconix	500	14	400 @ 8.4A, 10V	64 @ 10V	190	TO-247AC	Active
SIHG14N50D-GE3	Vishay Siliconix	500	14	400 @ 7A, 10V	58 @ 10V	208	TO-247AC	Active
STW14NK50Z	STMicroelectronics	500	14	380 @ 6A, 10V	92 @ 10V	150	TO-247-3	Active
STW20NK50Z	STMicroelectronics	500	17	270 @ 8.5A, 10V	119 @ 10V	190	TO-247-3	Active

Engineering Selection Recommendations

For Direct Replacement (500V, 16A Requirement):

IRFP17N50LPBF is the primary equivalent substitute. It maintains the 500V/16A specification with improved on-resistance (320mOhm versus 400mOhm) and operates within the same temperature range (-55°C to 150°C). Both parts are RoHS3 compliant and REACH unaffected. The TO-247AC package is mechanically compatible with TO-247AD applications. Higher gate charge (130nC versus 43nC) requires verification of gate drive circuit capability.

For 500V Applications with Reduced Current Requirement (14A):

IRFP450APBF, SIHG14N50D-GE3, and STW14NK50Z are suitable where continuous drain current of 14A satisfies circuit requirements. All three maintain 500V rating and RoHS3 compliance. STW14NK50Z offers the lowest power dissipation (150W) and is part of the SuperMESH™ series. SIHG14N50D-GE3 provides the lowest gate charge (58nC) for reduced switching losses.

For 500V Applications with Increased Current Capability (17A):

STW20NK50Z provides 500V/17A with superior on-resistance (270mOhm) and is suitable for applications requiring higher current handling. Power dissipation is 190W. This part is RoHS3 compliant and operates across the full temperature range.

For 400V Applications (Reduced Voltage Stress):

IRFP350LCPBF and IRFP350PBF are applicable only in circuits where maximum drain-to-source voltage does not exceed 400V. Both maintain 16A rating and RoHS3 compliance. IRFP350LCPBF has lower gate charge (76nC) compared to IRFP350PBF (150nC).

All substitute parts are Active status with current inventory availability and meet regulatory compliance requirements (RoHS3, REACH unaffected, EAR99 classification).

Frequently Asked Questions (FAQ)

Q: Can IRFP17N50LPBF directly replace IXFH16N50P in all applications?

A: IRFP17N50LPBF is electrically compatible as a direct substitute for 500V/16A applications. Both parts maintain identical voltage and current ratings, operating temperature range, and compliance status. The TO-247AC package is mechanically compatible with TO-247AD. However, gate charge differs significantly (130nC versus 43nC), requiring verification that the gate drive circuit can supply the higher charge without exceeding switching frequency or thermal limits.

Q: What is the difference between TO-247AC and TO-247AD packages?

A: Both TO-247AC and TO-247AD are three-lead through-hole packages with identical pin configurations and mechanical mounting. The primary difference is internal die design and thermal characteristics. Parts specified for either package are mechanically interchangeable in PCB layouts designed for TO-247-3 footprints.

Q: Can I use IRFP350LCPBF or IRFP350PBF as substitutes?

A: IRFP350LCPBF and IRFP350PBF are suitable only for applications where the maximum drain-to-source voltage does not exceed 400V. These parts are rated for 400V, not 500V. Using them in circuits designed for 500V operation will result in device failure. Verify circuit maximum voltage stress before selection.

Q: Why do some substitutes have lower current ratings (14A versus 16A)?

A: IRFP450APBF, SIHG14N50D-GE3, and STW14NK50Z are rated for 14A continuous drain current. These parts are suitable for applications where the circuit design does not require the full 16A capability. If the application requires 16A or higher, these parts are not appropriate substitutes.

Q: What does gate charge (Qg) represent and why does it vary among substitutes?

A: Gate charge is the total charge required to switch the MOSFET from off to on state. Higher gate charge requires more current from the gate drive circuit and increases switching losses. IXFH16N50P has 43nC, while IRFP17N50LPBF has 130nC. Verify that the gate drive circuit can supply the required charge at the intended switching frequency without exceeding thermal or voltage limits.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant and REACH unaffected, matching the compliance status of IXFH16N50P. All parts carry EAR99 classification and are suitable for equivalent regulatory environments.

Q: What is the significance of on-resistance (Rds On) differences?

A: On-resistance determines conduction losses when the MOSFET is in the on state. Lower on-resistance reduces power dissipation and heat generation. IXFH16N50P has 400mOhm, while STW20NK50Z has 270mOhm. For applications with high continuous current or tight thermal budgets, lower on-resistance improves efficiency. For low-frequency or low-current applications, on-resistance differences have minimal impact.

Q: Can STW20NK50Z be used in place of IXFH16N50P?

A: STW20NK50Z is suitable for applications where 17A continuous current capability is beneficial. It maintains 500V rating and RoHS3 compliance. The superior on-resistance (270mOhm) reduces conduction losses. However, verify that the circuit design accommodates the higher current rating and that thermal management is adequate for the 190W power dissipation specification.

Q: What inventory levels are available for substitute parts?

A: Current inventory includes IRFP17N50LPBF (1275 pcs), IRFP350LCPBF (5215 pcs), IRFP350PBF (9513 pcs), IRFP450APBF (1324 pcs), SIHG14N50D-GE3 (1482 pcs), STW14NK50Z (5447 pcs), and STW20NK50Z (7794 pcs). IXFH16N50P has 1700 pcs in stock.

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