IXFH15N80Q Equivalent & Substitute Parts

Part Overview

The IXFH15N80Q is an N-Channel 800V 15A MOSFET in TO-247AD package manufactured by IXYS. This device is part of the HiPerFET™ Q Class series and is rated for 300W maximum power dissipation at case temperature. The part is marked as "Not For New Designs," indicating it has been superseded in the manufacturer's product roadmap. Identifying equivalent and substitute parts is necessary for design continuity, inventory management, and long-term product support.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	15	A
On-State Resistance (Rds On) @ 7.5A, 10V	600	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	4.5	V
Gate Charge (Qg) @ 10V	90	nC
Maximum Power Dissipation (Tc)	300	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXFH15N80Q is determined by the following critical parameters:

Voltage Rating (Vdss): The drain-source voltage must equal or exceed 800V to maintain system safety margins and prevent breakdown.

Current Rating (Id): The continuous drain current must be at least 15A at 25°C to support the application's power delivery requirements.

On-State Resistance (Rds On): Lower resistance values improve efficiency and reduce power dissipation. Equivalent parts typically range from 450mOhm to 600mOhm at the specified gate voltage and current conditions.

Package Compatibility: The TO-247-3 package footprint is standard across all substitute parts, ensuring mechanical and thermal interface compatibility.

Operating Temperature Range: All substitute parts maintain the -55°C to 150°C operating range, ensuring thermal performance consistency.

Gate Charge (Qg): Gate charge affects switching speed and driver requirements. Substitute parts range from 30nC to 90nC, with lower values enabling faster switching.

Substitute parts are grouped into two categories: Direct Equivalents (matching voltage and current ratings with active product status) and Functional Alternatives (meeting voltage and current requirements with different thermal or electrical characteristics).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg @ 10V (nC)	Power Dissipation (W)	Product Status	Package
IXFH15N80Q	IXYS	800	15	600 @ 7.5A	90	300	Not For New Designs	TO-247-3
IXFH14N85X	IXYS	850	14	550 @ 500mA	30	460	Active	TO-247-3
IXFH16N80P	IXYS	800	16	600 @ 500mA	71	460	Active	TO-247-3
APT15F60B	Microsemi Corporation	600	16	430 @ 7A	72	290	Active	TO-247-3
APT8052BFLLG	Microchip Technology	800	15	520 @ 7.5A	75	—	Active	TO-247-3
APT8052BLLG	Microchip Technology	800	15	520 @ 7.5A	75	—	Active	TO-247-3
IRFPC50APBF	Vishay Siliconix	600	11	580 @ 6A	70	180	Active	TO-247-3
IRFPC50LCPBF	Vishay Siliconix	600	11	600 @ 6.6A	84	190	Active	TO-247-3
IRFPC50PBF	Vishay Siliconix	600	11	600 @ 6A	140	180	Active	TO-247-3
SIHG11N80E-GE3	Vishay Siliconix	800	12	440 @ 5.5A	88	179	Active	TO-247-3
SPW11N80C3FKSA1	Infineon Technologies	800	11	450 @ 7.1A	85	156	Not For New Designs	TO-247-3

Engineering Selection Recommendations

Direct Equivalents (Recommended for New Designs):

The IXFH16N80P and APT8052BFLLG / APT8052BLLG are the primary substitutes for the IXFH15N80Q. Both parts maintain the 800V voltage rating and 15A current specification with active product status. The IXFH16N80P offers 16A continuous current capability with 460W power dissipation, providing improved thermal headroom. The APT8052 variants (Microchip Technology POWER MOS 7® series) deliver 800V / 15A with 520mOhm on-state resistance and active product support, ensuring long-term availability.

Voltage-Rated Alternatives:

The IXFH14N85X (IXYS HiPerFET™ Ultra X series) provides 850V rating with 14A current and significantly reduced gate charge (30nC), enabling faster switching performance. This part is suitable for applications where higher voltage margin is beneficial and current requirements can tolerate a 1A reduction.

Lower Voltage Alternatives:

The APT15F60B (Microsemi POWER MOS 8™) and IRFPC50 variants (Vishay Siliconix) operate at 600V, which is acceptable only for applications with 600V system voltage specifications. These parts are not suitable as direct replacements for 800V-rated designs.

Thermal Considerations:

The IXFH16N80P and IXFH14N85X offer superior power dissipation ratings (460W) compared to the original IXFH15N80Q (300W), providing enhanced thermal performance. The SPW11N80C3FKSA1 (Infineon CoolMOS™) delivers lower on-state resistance (450mOhm) but reduced current rating (11A) and is marked "Not For New Designs."

Compliance and Availability:

All substitute parts listed are RoHS3 compliant and REACH unaffected. The IXFH16N80P and APT8052 variants have confirmed active product status with substantial inventory availability, ensuring supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the IXFH14N85X replace the IXFH15N80Q in all applications?

A: The IXFH14N85X is suitable for applications where the 1A current reduction (14A vs. 15A) is acceptable and the higher voltage rating (850V vs. 800V) is beneficial. The 850V rating provides additional safety margin. Gate charge is significantly lower (30nC vs. 90nC), enabling faster switching. Verify application current requirements before substitution.

Q: Why are the IRFPC50 variants listed as substitutes if they operate at 600V?

A: The IRFPC50 series are listed because they appear in the original IXFH15N80Q substitute list provided by the manufacturer. However, these parts are only suitable for applications with 600V system specifications. They cannot replace the IXFH15N80Q in 800V-rated designs due to insufficient voltage rating.

Q: What is the primary advantage of the IXFH16N80P over the IXFH15N80Q?

A: The IXFH16N80P maintains the same 800V voltage rating and TO-247-3 package while providing 16A continuous current (vs. 15A) and 460W power dissipation (vs. 300W). It has active product status, ensuring long-term availability. Gate charge is lower (71nC vs. 90nC), improving switching performance.

Q: Are the APT8052BFLLG and APT8052BLLG interchangeable?

A: Both parts are Microchip Technology POWER MOS 7® devices with identical electrical specifications: 800V / 15A, 520mOhm on-state resistance, and 75nC gate charge. The primary difference is packaging designation. Both are suitable substitutes for the IXFH15N80Q with active product status.

Q: Can the SPW11N80C3FKSA1 be used as a substitute despite "Not For New Designs" status?

A: The SPW11N80C3FKSA1 meets the 800V voltage requirement but has reduced current rating (11A vs. 15A) and lower power dissipation (156W vs. 300W). It is marked "Not For New Designs," indicating Infineon has superseded this part. Use only for legacy system maintenance or where current requirements are below 11A.

Q: What package compatibility should be verified when substituting?

A: All listed substitute parts use the TO-247-3 package with through-hole mounting, ensuring mechanical and thermal interface compatibility with the IXFH15N80Q. Verify PCB footprint and heatsink mounting interface match the original design.

Q: How does on-state resistance affect component selection?

A: On-state resistance (Rds On) directly impacts power dissipation and efficiency. Lower Rds On values reduce I²R losses. The IXFH15N80Q has 600mOhm at 7.5A / 10V. Substitutes range from 430mOhm (APT15F60B) to 600mOhm (IRFPC50 variants). Lower resistance improves efficiency but may require different thermal management.

Q: Is gate charge an important selection criterion?

A: Gate charge affects switching speed and driver circuit requirements. The IXFH15N80Q has 90nC gate charge. The IXFH14N85X offers significantly lower gate charge (30nC), enabling faster switching and reduced switching losses. Higher gate charge (140nC in IRFPC50PBF) requires more robust gate drive circuitry.

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