IXFH15N80 N-Channel 800V 15A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH15N80 is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 15A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a TO-247AD through-hole package. The part is currently in Active product status with 1350 units in stock.

Substitute parts are identified when equivalent electrical and mechanical parameters allow direct replacement in circuit applications. Substitution necessity arises from inventory availability, lead time requirements, or design flexibility across multiple qualified component sources.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	15	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	600 mOhm @ 7.5A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 4mA
Gate Charge (Qg Max) @ Vgs	200	nC @ 10V
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution logic for the IXFH15N80 is based on the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 800V minimum
Continuous Drain Current (Id): 15A or greater at 25°C
Package Type: TO-247-3 through-hole configuration
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance and REACH Unaffected status

Substitute Parts Identified:

Group 1 – Direct Upgrade (Higher Current Rating):

IXFH16N80P (IXYS): 16A rating, 460W power dissipation, improved gate charge characteristics

Group 2 – Lower Voltage Rating (Not Recommended for Direct Substitution):

IRFPC50APBF (Vishay Siliconix): 600V rating, 11A current. This part operates at reduced voltage and current specifications and is not suitable for applications requiring full 800V operation.

Group 3 – Equivalent Voltage, Lower Current (Conditional Substitution):

SPW11N80C3FKSA1 (Infineon Technologies): 800V, 11A rating, CoolMOS™ series. Product status is "Not For New Designs."
STW11NM80 (STMicroelectronics): 800V, 11A rating, MDmesh™ series. Active product status.

Group 4 – Direct Upgrade (Higher Current Rating):

SPW17N80C3FKSA1 (Infineon Technologies): 800V, 17A rating, 227W power dissipation, CoolMOS™ series. Active product status.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg Max (nC)	Power Diss. (W)	Temp Range (°C)	Product Status
IXFH15N80	IXYS	800	15	600 @ 7.5A, 10V	200 @ 10V	300	-55 to 150	Active
IXFH16N80P	IXYS	800	16	600 @ 500mA, 10V	71 @ 10V	460	-55 to 150	Active
IRFPC50APBF	Vishay Siliconix	600	11	580 @ 6A, 10V	70 @ 10V	180	-55 to 150	Active
SPW11N80C3FKSA1	Infineon Technologies	800	11	450 @ 7.1A, 10V	85 @ 10V	156	-55 to 150	Not For New Designs
SPW17N80C3FKSA1	Infineon Technologies	800	17	290 @ 11A, 10V	177 @ 10V	227	-55 to 150	Active
STW11NM80	STMicroelectronics	800	11	400 @ 5.5A, 10V	43.6 @ 10V	150	-65 to 150	Active

Engineering Selection Recommendations

Preferred Substitutes (Active Product Status):

IXFH16N80P – Direct upgrade within the same manufacturer series (IXYS HiPerFET™). Maintains 800V rating with increased current capacity (16A vs. 15A). Significantly improved gate charge (71 nC vs. 200 nC) reduces switching losses. Recommended for new designs requiring enhanced performance margin.
SPW17N80C3FKSA1 – Infineon CoolMOS™ series, 800V, 17A rating. Active product status with superior on-state resistance (290 mOhm vs. 600 mOhm). Suitable for applications prioritizing efficiency and thermal performance. Gate charge of 177 nC is moderate.
STW11NM80 – STMicroelectronics MDmesh™ series, 800V, 11A rating. Active product status with extended temperature range (-65°C to 150°C). Lower current rating (11A) requires thermal design verification for 15A applications. Lowest gate charge (43.6 nC) among 800V options.

Conditional Substitutes:

SPW11N80C3FKSA1 – Infineon CoolMOS™ series marked "Not For New Designs." Current rating of 11A is below the 15A specification. Use only in legacy system maintenance or when inventory constraints require it.

Not Recommended:

IRFPC50APBF – Vishay Siliconix part with 600V rating. Voltage specification is 200V below the IXFH15N80 requirement. Current rating of 11A is also insufficient. This part is suitable only for applications with reduced voltage requirements.

All substitute parts maintain RoHS3 compliance and REACH Unaffected status, matching the original part's regulatory requirements.

Frequently Asked Questions (FAQ)

Q1: Can IXFH16N80P directly replace IXFH15N80 in existing designs?

A: Yes. IXFH16N80P maintains identical voltage rating (800V), exceeds current requirement (16A vs. 15A), and uses the same TO-247-3 package. The improved gate charge (71 nC vs. 200 nC) may reduce switching losses. No circuit modifications are required.

Q2: Why is IRFPC50APBF listed as a substitute if it has lower voltage and current ratings?

A: IRFPC50APBF is included in the substitute list based on the provided input data. However, its 600V rating is 200V below the IXFH15N80 specification and its 11A current rating is below the 15A requirement. This part is not suitable for direct substitution in applications requiring full 800V operation.

Q3: What is the significance of "Not For New Designs" status for SPW11N80C3FKSA1?

A: This designation indicates the part is in mature/end-of-life phase. While functionally operational, Infineon recommends using alternative parts for new circuit designs. SPW11N80C3FKSA1 is acceptable only for legacy system support or maintenance applications.

Q4: How does gate charge (Qg) affect substitution suitability?

A: Gate charge determines switching speed and driver circuit requirements. IXFH15N80 has 200 nC gate charge. Substitutes with lower gate charge (IXFH16N80P at 71 nC, STW11NM80 at 43.6 nC) reduce switching losses and may improve efficiency. Higher gate charge (SPW17N80C3FKSA1 at 177 nC) requires more driver current but remains within acceptable range for most applications.

Q5: Are all substitute parts available in the same TO-247-3 package?

A: Yes. All listed substitute parts use TO-247-3 through-hole package configuration, ensuring mechanical compatibility with existing PCB layouts and thermal management solutions.

Q6: What is the impact of on-state resistance (Rds On) differences?

A: Lower Rds On reduces conduction losses and heat generation. SPW17N80C3FKSA1 (290 mOhm) and STW11NM80 (400 mOhm) offer superior efficiency compared to IXFH15N80 (600 mOhm). For applications with high current duty cycles, lower Rds On substitutes reduce thermal stress and improve reliability.

Q7: Can STW11NM80 replace IXFH15N80 in high-current applications?

A: STW11NM80 has an 11A continuous current rating, which is below the 15A specification of IXFH15N80. Substitution is conditional and requires thermal analysis to confirm the application does not exceed 11A sustained current. Extended temperature range (-65°C to 150°C) provides additional margin in cold environments.

Q8: What compliance certifications are maintained across all substitute parts?

A: All substitute parts maintain RoHS3 compliance and REACH Unaffected status, matching the original IXFH15N80 regulatory requirements. No additional compliance verification is required for substitution.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message