IXFH15N100P Equivalent & Substitute Parts

Part Overview

The IXFH15N100P is an N-Channel MOSFET manufactured by IXYS, rated for 1000V drain-to-source voltage with 15A continuous drain current at 25°C. This device belongs to the HiPerFET™ series and is housed in a TO-247AD through-hole package. The part is Active in product status and fully compliant with RoHS3 and REACH regulations.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges, accounting for variations in voltage rating, current capacity, and thermal characteristics. Alternative devices may be required due to inventory availability, application-specific thermal requirements, or design optimization for cost and performance balance.

Substiute Parts

IXFH15N100P

IXYSIn Stock: 15140IXFH15N100P Datasheet

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APT14F100B

Microchip TechnologyIn Stock: 767APT14F100B Datasheet

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STW10N95K5

STMicroelectronicsIn Stock: 44988STW10N95K5 Datasheet

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STW12N120K5

STMicroelectronicsIn Stock: 8241STW12N120K5 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH15N100P is determined by the following critical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a drain-to-source voltage (Vdss) rating of 1000V or higher to ensure safe operation within the original design envelope.

Current Capacity: Substitute parts must support continuous drain current (Id) at 25°C within acceptable operational limits. The IXFH15N100P operates at 15A; substitutes with lower current ratings require circuit-level verification of thermal and current distribution.

Package Compatibility: All identified substitutes use TO-247-3 or TO-247AD through-hole packages, ensuring mechanical and thermal interface compatibility.

Gate Drive Characteristics: Drive voltage, gate charge, and threshold voltage must be compatible with existing gate driver circuits. All substitutes operate at 10V drive voltage with Vgs(th) ratings between 5V and 6.5V.

Thermal Performance: Power dissipation ratings and operating temperature ranges must support the thermal requirements of the application.

Regulatory Compliance: All substitute parts maintain RoHS3 compliance, REACH unaffected status, and MSL Level 1 moisture sensitivity rating.

Parameter Comparison

Engineering Selection Recommendations

APT14F100B (Microchip Technology): This substitute maintains the 1000V voltage rating and operates at 14A continuous drain current, representing a 6.7% reduction from the IXFH15N100P. The device is Active in product status with full RoHS3 compliance. The higher gate charge (120 nC versus 97 nC) and increased Rds On (980 mOhm versus 760 mOhm) result in slightly elevated switching losses and conduction losses. Power dissipation is rated at 500W, marginally lower than the primary part. This substitute is suitable for applications where the 14A current capacity is sufficient and thermal management accommodates the reduced power rating.

STW10N95K5 (STMicroelectronics): This device operates at 950V drain-to-source voltage and 8A continuous drain current, representing significant reductions in both voltage and current ratings compared to the IXFH15N100P. The 950V rating is below the 1000V specification and requires circuit-level verification for voltage margin compliance. The 8A current capacity is substantially lower, limiting applicability to reduced-power designs. Power dissipation is rated at 130W. This substitute is applicable only in applications where both voltage and current requirements are substantially lower than the primary part specification.

STW12N120K5 (STMicroelectronics): This substitute provides a 1200V drain-to-source voltage rating, exceeding the IXFH15N100P specification by 200V. Continuous drain current is rated at 12A, representing a 20% reduction from the primary part. The device is Active in product status with full RoHS3 compliance. The lower gate charge (44.2 nC versus 97 nC) and improved Rds On (690 mOhm versus 760 mOhm) provide reduced switching losses and improved conduction efficiency. Power dissipation is rated at 250W. This substitute is suitable for applications requiring higher voltage margin and where the 12A current capacity is acceptable.

All substitute parts maintain compliance with RoHS3, REACH unaffected status, and MSL Level 1 ratings, ensuring regulatory and environmental compatibility with the original design.

Frequently Asked Questions (FAQ)

Q: Can the APT14F100B directly replace the IXFH15N100P in all applications?

A: The APT14F100B maintains the same 1000V voltage rating and operates at 14A continuous drain current versus 15A for the IXFH15N100P. Direct substitution is valid when the application current requirement does not exceed 14A and thermal management accommodates the 500W power dissipation rating. Gate drive circuits must be verified for compatibility with the 120 nC gate charge specification.

Q: What are the limitations of the STW10N95K5 as a substitute?

A: The STW10N95K5 operates at 950V drain-to-source voltage, which is 50V below the IXFH15N100P specification. This device is not suitable as a direct substitute for applications requiring the full 1000V rating. Additionally, the 8A continuous drain current is substantially lower than the 15A rating of the primary part. This substitute is applicable only in reduced-voltage, reduced-current applications.

Q: Is the STW12N120K5 suitable for high-voltage applications?

A: The STW12N120K5 provides a 1200V drain-to-source voltage rating, which exceeds the IXFH15N100P specification. This higher voltage rating provides additional design margin for transient overvoltage conditions. The 12A continuous drain current is lower than the primary part, requiring verification that the application current requirement does not exceed this limit. The improved gate charge characteristics (44.2 nC) reduce switching losses compared to the IXFH15N100P.

Q: Are all substitute parts compatible with the same gate driver circuit?

A: All substitute parts operate at 10V drive voltage with gate threshold voltages between 5V and 6.5V, ensuring compatibility with standard gate driver circuits designed for the IXFH15N100P. However, gate charge specifications vary: IXFH15N100P (97 nC), APT14F100B (120 nC), STW10N95K5 (22 nC), and STW12N120K5 (44.2 nC). Gate driver circuits with fixed timing parameters may require adjustment to accommodate these variations.

Q: Do all substitute parts use the same package?

A: All substitute parts use TO-247-3 or TO-247AD through-hole packages, ensuring mechanical compatibility with the original PCB layout. The IXFH15N100P uses TO-247AD, while APT14F100B uses TO-247 [B], and STW10N95K5 and STW12N120K5 use TO-247-3. These packages are mechanically and thermally interchangeable for standard through-hole mounting applications.

Q: What is the impact of different input capacitance values on circuit performance?

A: Input capacitance (Ciss) varies significantly among substitutes: IXFH15N100P (5140 pF @ 25V), APT14F100B (3965 pF @ 25V), STW10N95K5 (630 pF @ 100V), and STW12N120K5 (1370 pF @ 100V). Lower input capacitance reduces gate drive power requirements and switching losses. Circuits with fixed gate drive impedance may experience different switching characteristics with substitutes having significantly different Ciss values.

Q: Are all substitute parts available in the same packaging format?

A: All substitute parts are supplied in tube packaging, matching the IXFH15N100P packaging format. Inventory availability varies: IXFH15N100P (15,126 pcs), APT14F100B (700 pcs), STW10N95K5 (44,900 pcs), and STW12N120K5 (8,206 pcs).