IXFH14N80P N-Channel 800V 14A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH14N80P is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 14A continuous drain current at 25°C. This device operates in the HiPerFET™ series and is housed in a TO-247AD through-hole package. The part is Active in product status and RoHS3 compliant.

Substitute parts become necessary when the primary part experiences extended lead times, inventory constraints, or when design flexibility permits operation within alternative electrical and mechanical specifications. The substitute devices listed maintain compatibility across critical parameters including voltage rating, package type, and operating temperature range while offering variations in current handling and power dissipation characteristics.

Substiute Parts

IXFH14N80P

IXYSIn Stock: 5983IXFH14N80P Datasheet

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STW10NK80Z

STMicroelectronicsIn Stock: 10124STW10NK80Z Datasheet

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STW11NM80

STMicroelectronicsIn Stock: 1438STW11NM80 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH14N80P is determined by the following mandatory parameters:

Voltage Compatibility: All substitute parts must maintain the 800V Vdss rating to ensure safe operation in the same circuit topology without exceeding voltage stress limits.

Package Compatibility: Substitute parts must use TO-247-3 or TO-247AD through-hole packaging to maintain mechanical fit and thermal interface compatibility with existing PCB layouts and heatsink assemblies.

Gate-Source Voltage: All candidates must support ±30V Vgs maximum to ensure gate drive circuit compatibility.

Operating Temperature Range: Substitute parts must support the -55°C to 150°C operating window or a subset thereof that covers the application's thermal requirements.

Compliance Status: All substitute parts must maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity to preserve supply chain and manufacturing process compatibility.

The substitute parts STW10NK80Z and STW11NM80 satisfy these mandatory criteria. Variations in continuous drain current (9A and 11A respectively), power dissipation (160W and 150W), and on-resistance characteristics represent trade-offs that may be acceptable depending on circuit design margins and thermal management provisions.

Parameter Comparison

Engineering Selection Recommendations

IXFH14N80P (Primary Part): This device is the specified component with the highest continuous drain current rating (14A) and power dissipation capability (400W). It remains the preferred selection when available and when circuit design operates at or near the maximum current and thermal specifications.

STW11NM80 (Preferred Substitute): This STMicroelectronics device provides the closest electrical performance match among substitutes, with 11A continuous drain current and superior on-resistance characteristics (400 mOhm @ 5.5A versus 720 mOhm @ 500mA on the primary part). The lower gate charge (43.6 nC) and input capacitance (1630 pF) offer improved switching performance. The extended lower operating temperature limit (-65°C) provides additional thermal margin. All compliance certifications (RoHS3, MSL 1) are maintained. This part is suitable for applications where the 11A current rating satisfies design requirements and thermal management is adequate for the 150W power dissipation.

STW10NK80Z (Secondary Substitute): This STMicroelectronics device is suitable only for applications where continuous drain current requirements do not exceed 9A. The 160W power dissipation limit and higher on-resistance (900 mOhm @ 4.5A) represent significant derating compared to the primary part. This substitute is appropriate for lower-current circuit variants or as a last-resort option when higher-current alternatives are unavailable. All compliance certifications are maintained.

All three parts share identical 800V voltage rating, ±30V gate-source voltage specification, TO-247 package family compatibility, and RoHS3/MSL 1 compliance status. Selection between primary and substitute parts depends solely on whether the application's current and power dissipation requirements fall within the electrical specifications of each device.

Frequently Asked Questions (FAQ)

Q: Can STW11NM80 directly replace IXFH14N80P in all applications?

A: STW11NM80 is mechanically and electrically compatible with IXFH14N80P in applications where continuous drain current does not exceed 11A and power dissipation remains below 150W. The 800V voltage rating, ±30V gate-source voltage, TO-247-3 package, and operating temperature range (-65°C to 150°C) are fully compatible. Applications requiring the full 14A current capability or 400W power dissipation of the IXFH14N80P cannot use this substitute without circuit redesign.

Q: What is the difference between TO-247AD and TO-247-3 packages?

A: Both packages are through-hole TO-247 variants with identical pin pitch and mechanical footprint compatibility. The primary difference is internal lead frame design. TO-247AD (IXFH variant) and TO-247-3 (STMicroelectronics variant) are mechanically interchangeable on standard PCB layouts and heatsink assemblies. No PCB redesign is required for package substitution.

Q: Can STW10NK80Z be used in place of IXFH14N80P?

A: STW10NK80Z is mechanically compatible but electrically limited to 9A continuous drain current and 160W power dissipation. This substitute is only appropriate for circuit variants designed for 9A operation or lower. Applications requiring 14A or higher current cannot use this part without significant circuit redesign and thermal management modifications.

Q: Are all three parts RoHS3 compliant?

A: Yes. IXFH14N80P, STW10NK80Z, and STW11NM80 are all RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level. All parts are suitable for supply chains and manufacturing processes requiring RoHS3 certification.

Q: What are the key electrical differences between the substitute parts?

A: STW11NM80 offers superior on-resistance (400 mOhm @ 5.5A) compared to IXFH14N80P (720 mOhm @ 500mA) and STW10NK80Z (900 mOhm @ 4.5A). STW11NM80 also has lower gate charge (43.6 nC) and input capacitance (1630 pF), resulting in faster switching characteristics. However, STW11NM80 is rated for 11A maximum continuous current versus 14A for IXFH14N80P and 9A for STW10NK80Z. Power dissipation limits are 150W (STW11NM80), 160W (STW10NK80Z), and 400W (IXFH14N80P).

Q: Do all parts support the same operating temperature range?

A: IXFH14N80P and STW10NK80Z both operate from -55°C to 150°C. STW11NM80 extends the lower temperature limit to -65°C, providing additional margin for cold-environment applications. All three parts support the upper temperature limit of 150°C.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge (Qg) affects gate drive circuit design and switching speed. STW11NM80 has the lowest gate charge (43.6 nC), enabling faster switching and lower gate drive power consumption. IXFH14N80P (61 nC) and STW10NK80Z (72 nC) require proportionally higher gate drive energy. For most applications with standard gate drive circuits, these differences are not critical, but high-frequency switching designs may benefit from the lower gate charge of STW11NM80.

Q: Are there inventory or lead-time considerations for these parts?

A: Inventory levels are provided for reference only and do not constitute a substitution criterion. Part selection must be based on electrical and mechanical compatibility as defined in this document.