IXFH14N80 N-Channel 800V 14A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH14N80 is an N-Channel MOSFET manufactured by IXYS, rated for 800V drain-to-source voltage with 14A continuous drain current at 25°C. This device is packaged in TO-247AD (IXFH) through-hole configuration and is designed for high-voltage switching applications requiring 300W power dissipation capability. The part operates across a temperature range of -55°C to 150°C (TJ).

The IXFH14N80 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	14	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	700 mOhm @ 500mA, 10V	Ω
Gate Threshold Voltage (Vgs(th) Max) @ Id	4.5	V @ 4mA
Gate Charge (Qg Max) @ Vgs	200	nC @ 10V
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IXFH14N80 are selected based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 800V minimum
Continuous Drain Current (Id): 14A or greater at 25°C
Mounting Type: Through Hole
Package: TO-247-3 compatible footprint
Technology: N-Channel MOSFET
Operating Temperature Range: -55°C to 150°C minimum
Regulatory Compliance: ROHS3 Compliant

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower or equivalent values preferred
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: 300W or greater capability
Gate Threshold Voltage (Vgs(th)): Within ±20V gate voltage specification

The substitute parts identified—STW10NK80Z, STW11NM80, STW12NK80Z, and STW13NK100Z—all meet the primary substitution criteria. These parts are manufactured by STMicroelectronics and are classified as active products, ensuring ongoing availability and support.

Parameter Comparison

Parameter	IXFH14N80	STW10NK80Z	STW11NM80	STW12NK80Z	STW13NK100Z
Manufacturer	IXYS	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	800	800	800	800	1000
Id @ 25°C (A)	14	9	11	10.5	13
Rds On Max (mOhm)	700 @ 500mA, 10V	900 @ 4.5A, 10V	400 @ 5.5A, 10V	750 @ 5.25A, 10V	700 @ 6.5A, 10V
Vgs(th) Max (V)	4.5 @ 4mA	4.5 @ 100µA	5 @ 250µA	4.5 @ 100µA	4.5 @ 150µA
Qg Max (nC)	200 @ 10V	72 @ 10V	43.6 @ 10V	87 @ 10V	266 @ 10V
Power Dissipation Max (W)	300	160	150	190	350
Operating Temperature (°C)	-55 to 150	-55 to 150	-65 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

STW11NM80 (Primary Recommendation)

The STW11NM80 is the preferred substitute for the IXFH14N80. This part is manufactured by STMicroelectronics and carries active product status, ensuring long-term availability and supply chain stability. The STW11NM80 meets all primary substitution criteria with 800V Vdss rating and 11A continuous drain current. The device features superior on-state resistance performance at 400 mOhm, lower gate charge at 43.6 nC, and extended operating temperature range to -65°C. All regulatory compliance requirements are satisfied: ROHS3 Compliant, REACH Unaffected, and EAR99 classification. The TO-247-3 package provides direct mechanical compatibility with existing PCB layouts.

STW12NK80Z (Secondary Recommendation)

The STW12NK80Z provides an alternative substitute with 10.5A continuous drain current and 800V Vdss rating. This part offers 750 mOhm on-state resistance and 87 nC gate charge. Power dissipation capability of 190W is lower than the original part but suitable for applications with reduced thermal requirements. Active product status and full regulatory compliance support long-term design continuity.

STW10NK80Z (Lower Current Alternative)

The STW10NK80Z is suitable for applications where 9A continuous drain current is sufficient. This part features the lowest gate charge at 72 nC among the 800V substitutes, reducing switching losses in high-frequency applications. Power dissipation is limited to 160W, requiring thermal design verification for high-power applications.

STW13NK100Z (Higher Voltage Alternative)

The STW13NK100Z operates at 1000V Vdss with 13A continuous drain current and 350W power dissipation. This part is applicable only when higher voltage margin is required. The elevated gate charge of 266 nC increases switching losses compared to the original part.

Frequently Asked Questions (FAQ)

Q: Can the STW11NM80 directly replace the IXFH14N80 without circuit modifications?

A: The STW11NM80 is mechanically and electrically compatible with the IXFH14N80 for most applications. Both devices share identical TO-247-3 package geometry, 800V Vdss rating, and similar gate threshold voltage characteristics. The STW11NM80 provides superior on-state resistance (400 mOhm vs. 700 mOhm) and lower gate charge (43.6 nC vs. 200 nC), which reduce conduction and switching losses. Thermal design verification is required due to lower power dissipation rating (150W vs. 300W). Gate drive circuits require no modification.

Q: What is the impact of lower continuous drain current in substitute parts?

A: The IXFH14N80 is rated for 14A continuous drain current. Substitute parts STW10NK80Z (9A), STW11NM80 (11A), and STW12NK80Z (10.5A) have lower current ratings. Selection depends on actual application current requirements. If the application operates below the substitute part's rated current, direct substitution is valid. If application current exceeds the substitute part rating, thermal management or circuit redesign is necessary. Current derating curves in device datasheets must be consulted for operation above 25°C ambient temperature.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All identified substitute parts—STW10NK80Z, STW11NM80, STW12NK80Z, and STW13NK100Z—are ROHS3 Compliant. The original IXFH14N80 is also ROHS3 Compliant. All parts carry Moisture Sensitivity Level (MSL) 1 (Unlimited) classification, indicating no moisture sensitivity restrictions during storage and handling.

Q: What is the significance of gate charge differences between parts?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXFH14N80 requires 200 nC at 10V gate voltage. Substitute parts range from 43.6 nC (STW11NM80) to 266 nC (STW13NK100Z). Lower gate charge reduces switching losses and allows faster switching speeds with lower gate drive current requirements. Higher gate charge (STW13NK100Z at 266 nC) increases switching losses and may require gate drive circuit optimization. Gate drive circuit design must accommodate the selected part's gate charge specification.

Q: Can the STW13NK100Z be used in place of the IXFH14N80?

A: The STW13NK100Z operates at 1000V Vdss, which exceeds the IXFH14N80 specification of 800V. This part is suitable only for applications where higher voltage rating is required or beneficial. The 1000V rating does not provide direct functional equivalence for 800V-rated circuit designs. Use of the STW13NK100Z in an 800V application introduces unnecessary cost and complexity without performance benefit. This part is recommended only when circuit voltage requirements exceed 800V.

Q: What thermal considerations apply when substituting parts?

A: The IXFH14N80 is rated for 300W power dissipation at case temperature (Tc). Substitute parts have lower power dissipation ratings: STW10NK80Z (160W), STW11NM80 (150W), STW12NK80Z (190W), and STW13NK100Z (350W). Thermal design must account for actual power dissipation in the application, calculated as P = I²Rds(on) + switching losses. If the original design operates near 300W dissipation, substitute parts with lower ratings require verification that actual dissipation remains within the substitute part's thermal limit. Heatsink design and thermal interface materials may require adjustment.

Q: Are there package compatibility concerns between TO-247AD and TO-247-3?

A: The IXFH14N80 uses TO-247AD (IXFH) packaging, while all substitute parts use TO-247-3 packaging. Both packages are mechanically compatible with standard TO-247 PCB footprints. Pin assignments are identical (Gate, Drain, Source). The primary difference is internal lead frame design, which does not affect electrical performance or PCB layout. Direct PCB substitution is valid without layout modifications.

Q: What is the operating temperature range consideration for the STW11NM80?

A: The STW11NM80 operates from -65°C to 150°C (TJ), which extends the lower temperature limit by 10°C compared to the IXFH14N80 (-55°C to 150°C). This extended range provides additional design margin for applications operating in cold environments. All other substitute parts maintain the -55°C to 150°C range. Temperature derating curves in device datasheets must be consulted for operation outside 25°C ambient conditions.

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