IXFH14N100Q2 N-Channel 1000V 14A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH14N100Q2 is an N-Channel 1000V 14A MOSFET manufactured by IXYS in the HiPerFET™ Q2 Class series, housed in a TO-247AD through-hole package. This device is rated for 500W power dissipation and operates across a temperature range of -55°C to 150°C. The part is marked as Not For New Designs, indicating it has been superseded in the manufacturer's product line. Equivalent and substitute parts are necessary for applications requiring continued sourcing, design flexibility, or performance optimization within the same electrical and mechanical specifications.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	14	A
On-State Resistance (Rds On) @ 7A, 10V	950	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	5.5	V
Gate Charge (Qg) @ 10V	83	nC
Input Capacitance (Ciss) @ 25V	2800	pF
Power Dissipation (Max)	500	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IXFH14N100Q2 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 1000V minimum
Continuous Drain Current (Id): 14A minimum at 25°C
Package Type: TO-247-3 or compatible through-hole variant
Operating Temperature Range: -55°C to 150°C minimum
Gate Drive Voltage: 10V

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Within acceptable range for application thermal management
Gate Charge (Qg): Affects switching speed and drive circuit requirements
Input Capacitance (Ciss): Influences gate drive circuit design

Substitute parts are grouped into two categories:

Category A – Direct Electrical Equivalents (1000V, 14A): Parts meeting or exceeding the primary electrical specifications with identical or superior current and voltage ratings, maintaining the same power dissipation class.

Category B – Functional Alternatives (1000V, 13-15A): Parts with slightly reduced or increased current ratings (13A to 15A) that maintain 1000V Vdss and operate within the same thermal envelope, suitable for applications with current margin flexibility.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Qg @ 10V (nC)	Ciss @ 25V (pF)	Pd Max (W)	Package	Status
IXFH14N100Q2	IXYS	1000	14	950 @ 7A	83	2800	500	TO-247AD	Not For New Designs
IXFH15N100P	IXYS	1000	15	760 @ 500mA	97	5140	543	TO-247AD	Active
APT10078BFLLG	Microchip	1000	14	780 @ 7A	95	2525	—	TO-247 [B]	Active
APT10078BLLG	Microchip	1000	14	780 @ 7A	95	2525	403	TO-247 [B]	Active
APT14F100B	Microchip	1000	14	980 @ 7A	120	3965	500	TO-247 [B]	Active
APT14M100B	Microchip	1000	14	900 @ 7A	120	3965	500	TO-247 [B]	Active
STW13NK100Z	STMicroelectronics	1000	13	700 @ 6.5A	266	6000	350	TO-247-3	Active
STW12NK90Z	STMicroelectronics	900	11	880 @ 5.5A	152	3500	230	TO-247-3	Active
STW11NK90Z	STMicroelectronics	900	9.2	980 @ 4.6A	115	3000	200	TO-247-3	Active
STW6N95K5	STMicroelectronics	950	9	1250 @ 3A	13	450	90	TO-247-3	Active

Engineering Selection Recommendations

Recommended Direct Substitutes (Category A):

The IXFH15N100P (IXYS, Active status) provides the closest functional replacement. It maintains 1000V Vdss and exceeds the 14A current requirement at 15A, with superior on-state resistance (760 mOhm vs. 950 mOhm). The part is in Active product status, ensuring long-term availability. The TO-247AD package is mechanically identical to the original. Higher gate charge (97 nC vs. 83 nC) and input capacitance (5140 pF vs. 2800 pF) require verification of gate drive circuit compatibility.

The APT10078BFLLG and APT10078BLLG (Microchip, POWER MOS 7®, Active status) deliver equivalent 1000V/14A specifications with improved on-state resistance (780 mOhm). Both parts are RoHS3 compliant and carry Active product status. The TO-247 [B] package is mechanically compatible with TO-247-3 footprints. APT10078BLLG includes specified power dissipation (403W), while APT10078BFLLG does not.

The APT14F100B and APT14M100B (Microchip, POWER MOS 8™, Active status) match the 1000V/14A/500W specifications exactly. On-state resistance values (980 mOhm and 900 mOhm respectively) are comparable to the original. Elevated gate charge (120 nC) and input capacitance (3965 pF) require gate drive circuit assessment.

Functional Alternatives (Category B):

The STW13NK100Z (STMicroelectronics, SuperMESH™, Active status) maintains 1000V Vdss with 13A continuous current, representing a 7% reduction from the original 14A specification. Superior on-state resistance (700 mOhm) provides thermal advantages. Significantly elevated gate charge (266 nC) and input capacitance (6000 pF) necessitate gate drive circuit redesign. Power dissipation is reduced to 350W.

The STW12NK90Z and STW11NK90Z (STMicroelectronics, SuperMESH™, Active status) operate at reduced voltage (900V) and current ratings, suitable only for applications with voltage and current margin. These parts are not recommended as direct substitutes for 1000V applications.

The STW6N95K5 (STMicroelectronics, SuperMESH5™, Active status) operates at 950V with 9A current and 90W power dissipation. This part is unsuitable for applications requiring 1000V or 14A specifications.

Compliance and Certification:

All recommended substitute parts carry RoHS3 compliance, Moisture Sensitivity Level 1 (Unlimited), and REACH Unaffected status, matching the original part's regulatory profile. ECCN and HTSUS classifications are identical across all parts.

Frequently Asked Questions (FAQ)

Q: Can the IXFH15N100P directly replace the IXFH14N100Q2 without circuit modification?

A: The IXFH15N100P is electrically compatible for voltage and current specifications. However, the increased gate charge (97 nC vs. 83 nC) and input capacitance (5140 pF vs. 2800 pF) may require gate drive circuit adjustment to maintain switching performance. Verify gate driver current capability and timing margins before implementation.

Q: What is the difference between APT10078BFLLG and APT10078BLLG?

A: Both parts are electrically identical with 1000V/14A specifications and 780 mOhm on-state resistance. The primary difference is that APT10078BLLG includes specified maximum power dissipation (403W), while APT10078BFLLG does not list this parameter. For thermal design purposes, APT10078BLLG provides explicit power rating information.

Q: Are STW12NK90Z and STW11NK90Z suitable substitutes?

A: These parts are not recommended as direct substitutes. Both operate at 900V maximum voltage, which is 100V below the original 1000V specification. Current ratings (11A and 9.2A respectively) also fall below the 14A requirement. These parts are suitable only for applications with reduced voltage and current requirements.

Q: Why does the STW13NK100Z have significantly higher gate charge than the original part?

A: The STW13NK100Z uses STMicroelectronics' SuperMESH™ technology, which trades increased gate charge (266 nC) for superior on-state resistance (700 mOhm) and lower power dissipation. This technology choice affects switching speed and gate drive circuit design. Gate driver current capability must be verified before substitution.

Q: Are all substitute parts available in the same TO-247-3 package?

A: The IXFH15N100P uses TO-247AD, while Microchip parts (APT series) use TO-247 [B]. Both are mechanically compatible with standard TO-247-3 footprints and pin configurations. STMicroelectronics parts (STW series) are specified as TO-247-3. Verify PCB footprint compatibility before board layout finalization.

Q: What is the impact of lower on-state resistance on thermal design?

A: Lower on-state resistance reduces conduction losses and heat generation. For example, APT10078BFLLG (780 mOhm) generates approximately 18% less heat than the original IXFH14N100Q2 (950 mOhm) at 14A continuous current. This allows for reduced heatsink requirements or improved thermal margin in existing designs.

Q: Can the APT14F100B and APT14M100B be used interchangeably?

A: Both parts meet identical electrical specifications (1000V/14A/500W) and are housed in TO-247 [B] packages. The primary difference is on-state resistance: APT14F100B at 980 mOhm versus APT14M100B at 900 mOhm. Selection depends on thermal design requirements. Both are Active status parts with equivalent availability.

Q: What does "Not For New Designs" status mean for the IXFH14N100Q2?

A: This designation indicates the part has been superseded by the manufacturer and is no longer recommended for new product development. Existing inventory remains available, but long-term sourcing is not guaranteed. Migration to Active status alternatives (such as IXFH15N100P or Microchip APT series) is recommended for new designs.

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