IXFH14N100Q Equivalent & Substitute Parts

Part Overview

The IXFH14N100Q is an N-Channel MOSFET rated for 1000V drain-to-source voltage with 14A continuous drain current at 25°C. Manufactured by IXYS under the HiPerFET™ series, this device is packaged in TO-247AD through-hole configuration and rated for 360W maximum power dissipation. The part is currently classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

Substiute Parts

IXFH14N100Q

IXYSIn Stock: 964IXFH14N100Q Datasheet

Current PartRFQ

IXFH15N100Q3

IXYSIn Stock: 1401IXFH15N100Q3 Datasheet

DirectRFQ

STWA12N120K5

STMicroelectronicsIn Stock: 1012STWA12N120K5 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH14N100Q is determined by the following critical parameters:

Voltage Rating Compatibility: The drain-to-source voltage (Vdss) must equal or exceed 1000V to maintain circuit protection margins.

Current Rating Compatibility: The continuous drain current (Id) must equal or exceed 14A at 25°C to support the application's current demands.

On-State Resistance (Rds On): The maximum on-state resistance must be compatible with thermal and efficiency requirements of the application.

Gate Charge (Qg): Gate charge affects switching speed and driver requirements; lower values indicate faster switching characteristics.

Power Dissipation: Maximum power dissipation capability must support the thermal load of the application.

Package and Mounting: Substitutes must use through-hole TO-247 family packaging to ensure mechanical and thermal compatibility.

Operating Temperature Range: The device must support the full -55°C to 150°C operating range.

Parameter Comparison

Engineering Selection Recommendations

IXFH15N100Q3 (Direct IXYS Equivalent)

The IXFH15N100Q3 is an active product from IXYS within the same HiPerFET™ family. It maintains the 1000V voltage rating and exceeds the 14A current requirement with 15A continuous drain current. The device provides higher power dissipation capability (690W versus 360W) and improved gate charge characteristics (64 nC versus 170 nC), enabling faster switching performance. This part is RoHS3 compliant and REACH unaffected, meeting current regulatory requirements. The TO-247AD package ensures direct mechanical and thermal compatibility with the original design.

STWA12N120K5 (STMicroelectronics Alternative)

The STWA12N120K5 offers a higher voltage rating (1200V) with comparable on-state resistance performance (690 mOhm). However, the continuous drain current is rated at 12A, which is below the original 14A specification. This part is suitable only for applications where the 12A current rating is acceptable. The device features lower gate charge (44.2 nC) and reduced input capacitance, supporting higher switching frequencies. This part is RoHS3 compliant and REACH unaffected. The TO-247 long-lead package provides mechanical compatibility with standard TO-247 footprints.

Frequently Asked Questions (FAQ)

Q: Can the IXFH15N100Q3 directly replace the IXFH14N100Q in all applications?

A: The IXFH15N100Q3 maintains identical voltage rating (1000V) and exceeds the current requirement (15A versus 14A). Both devices operate across the same temperature range (-55°C to 150°C) and use compatible TO-247AD packaging. The higher power dissipation rating (690W versus 360W) and improved gate charge characteristics make this a suitable direct replacement for the obsolete IXFH14N100Q.

Q: What are the limitations of using the STWA12N120K5 as a substitute?

A: The STWA12N120K5 has a continuous drain current rating of 12A, which is 2A below the original 14A specification. This part is suitable only for applications where the reduced current rating does not compromise circuit performance. The higher voltage rating (1200V) provides additional margin but does not offset the current limitation. Applications requiring the full 14A continuous current should use the IXFH15N100Q3.

Q: Are there package compatibility concerns between TO-247AD and TO-247 variants?

A: Both TO-247AD and TO-247 long-lead packages are mechanically compatible with standard TO-247 footprints. Pin assignments and thermal characteristics are equivalent. However, lead length differences may affect PCB layout; verify lead dimensions against your specific board design before implementation.

Q: What is the significance of the lower gate charge in substitute parts?

A: Lower gate charge (64 nC for IXFH15N100Q3 and 44.2 nC for STWA12N120K5 versus 170 nC for the original) indicates faster switching transitions. This reduces driver power requirements and enables higher switching frequencies. Existing gate driver circuits designed for the original part will operate with improved performance characteristics.

Q: How do on-state resistance differences affect thermal performance?

A: The IXFH14N100Q specifies 750 mOhm at 7A, 10V. The IXFH15N100Q3 specifies 1.05 Ohm at 7.5A, 10V, and the STWA12N120K5 specifies 690 mOhm at 6A, 10V. Higher on-state resistance increases conduction losses and heat generation. The IXFH15N100Q3's higher power dissipation rating (690W) compensates for this characteristic. The STWA12N120K5 offers lower on-state resistance but reduced current capacity.

Q: What compliance certifications apply to substitute parts?

A: The IXFH15N100Q3 and STWA12N120K5 are both RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. Both parts carry MSL 1 (Unlimited) moisture sensitivity classification and EAR99 export control designation.