IXFH13N90 N-Channel MOSFET 900V 13A Equivalent & Substitute Parts

Part Overview

The IXFH13N90 is an N-Channel MOSFET manufactured by IXYS, rated for 900V drain-to-source voltage with 13A continuous drain current at 25°C. This device is packaged in TO-247AD (Through Hole) configuration and is part of the HiPerFET™ series. The IXFH13N90 is classified as obsolete product status. Due to its obsolete classification, identifying equivalent and substitute parts from active manufacturers is necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	13	A
Rds On (Max) @ Id, Vgs	800 mOhm @ 500 mA, 10V	Ohm
Gate Charge (Qg) (Max) @ Vgs	155	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	4200	pF @ 25V
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	-
Package	TO-247-3	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the IXFH13N90 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 900V minimum
Continuous Drain Current (Id): 13A minimum at 25°C
Gate Drive Voltage: 10V nominal
Mounting Type: Through Hole
Package Type: TO-247-3 or compatible TO-247 variants
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Factors:

On-state resistance (Rds On): Lower or equivalent values preferred
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values improve switching performance
Power Dissipation capability: 300W or higher preferred

Substitute parts are grouped into two categories based on voltage rating alignment:

Category 1 - 900V Rated Devices: Direct voltage class substitutes with matching or superior current ratings (STW9NK90Z, STW12NK90Z, STW15NK90Z)

Category 2 - Higher Voltage Rated Devices: 1000V and 1200V rated devices that provide enhanced voltage margin and are electrically compatible in 900V applications (STW13NK100Z, STW12N120K5, APT14M100B, SCT10N120)

Parameter Comparison

Parameter	IXFH13N90	STW9NK90Z	STW12NK90Z	STW13NK100Z	STW15NK90Z	STW12N120K5	APT14M100B	SCT10N120
Manufacturer	IXYS	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	Microchip Technology	STMicroelectronics
Vdss (V)	900	900	900	1000	900	1200	1000	1200
Id @ 25°C (A)	13	8	11	13	15	12	14	12
Rds On (Max) (mOhm)	800	1300	880	700	550	690	900	690
Qg (Max) (nC)	155	72	152	266	256	44.2	120	22
Ciss (Max) (pF)	4200	2115	3500	6000	6100	1370	3965	290
Power Dissipation (W)	300	160	230	350	350	250	500	150
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 200
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Replacement - Same Voltage Class (900V):

The STW13NK100Z is the primary substitute for the IXFH13N90. This device matches the 13A continuous drain current specification exactly, operates at 1000V (providing 100V additional voltage margin), and is manufactured by STMicroelectronics with active product status. The STW13NK100Z is ROHS3 compliant and maintains the same TO-247-3 package configuration. This part is suitable for direct substitution in applications where the 900V rating is the design constraint.

The STW15NK90Z provides an alternative within the 900V class with superior current handling (15A vs. 13A) and lower on-state resistance (550 mOhm vs. 800 mOhm). This device is also active status and ROHS3 compliant, making it suitable for applications requiring enhanced thermal performance or higher current margins.

Higher Voltage Alternatives (1000V-1200V):

The STW12N120K5 and APT14M100B are suitable for applications where higher voltage ratings provide system-level benefits. Both devices exceed the 13A current requirement and offer lower on-state resistance. The STW12N120K5 operates at 1200V with 12A rating and 690 mOhm Rds On. The APT14M100B operates at 1000V with 14A rating and 900 mOhm Rds On. Both are active status and ROHS3 compliant.

The SCT10N120 is a Silicon Carbide (SiCFET) technology device rated at 1200V with 12A continuous current. This device features significantly lower gate charge (22 nC vs. 155 nC) and input capacitance (290 pF vs. 4200 pF), resulting in reduced switching losses. Operating temperature extends to 200°C. This device is suitable for applications where switching efficiency and thermal performance are critical design parameters.

Current Derating Consideration:

The STW9NK90Z and STW12NK90Z operate at 8A and 11A respectively, below the 13A specification of the IXFH13N90. These devices are suitable only for applications where the actual operating current is below their rated values.

All substitute parts maintain ROHS3 compliance and are available from active manufacturers with established supply chains.

Frequently Asked Questions (FAQ)

Q: Can the STW13NK100Z directly replace the IXFH13N90 in all applications?

A: The STW13NK100Z is electrically compatible with the IXFH13N90 for applications designed around 900V operation. The 1000V rating provides additional voltage margin without affecting performance in 900V circuits. Both devices share identical continuous drain current (13A), similar gate drive requirements (10V), and compatible TO-247-3 packaging. Verification of gate drive circuitry compatibility is recommended for optimal switching performance.

Q: What is the difference between the 900V and 1000V/1200V rated substitutes?

A: The voltage rating indicates the maximum drain-to-source voltage the device can withstand. A 1000V or 1200V rated device can be used in 900V applications with additional voltage margin, reducing stress on the semiconductor. This provides enhanced reliability in applications with voltage transients or overshoot conditions. The trade-off is typically higher on-state resistance and input capacitance in lower voltage ratings.

Q: Why does the SCT10N120 have significantly lower gate charge than other substitutes?

A: The SCT10N120 uses Silicon Carbide (SiCFET) technology rather than traditional silicon MOSFET technology. SiC devices inherently exhibit lower gate charge and input capacitance, resulting in faster switching transitions and reduced switching losses. This technology difference makes the SCT10N120 suitable for high-frequency switching applications where efficiency is critical.

Q: Are all substitute parts available in the same TO-247-3 package?

A: Yes, all substitute parts listed are packaged in TO-247-3 or compatible TO-247 variants. The TO-247-3 package is a standard three-lead through-hole configuration with identical pin assignments across all listed devices. Direct mechanical substitution is possible without PCB modifications.

Q: What is the significance of the "Active" product status for substitute parts?

A: Active product status indicates that the manufacturer continues to produce and support the device. This ensures long-term availability, established supply chains, and ongoing technical support. The IXFH13N90 is classified as obsolete, meaning IXYS no longer manufactures this device. Substituting with active status parts ensures design continuity and reduces supply chain risk.

Q: How do I determine which substitute is best for my application?

A: Selection depends on three primary factors: (1) Required continuous drain current—choose a device rated at or above your application's current requirement; (2) Voltage margin requirements—900V devices provide exact voltage matching, while 1000V/1200V devices provide additional margin; (3) Switching frequency and efficiency—lower gate charge and capacitance (SCT10N120) reduce switching losses in high-frequency applications. Verify gate drive voltage compatibility (10V or 20V) with your existing circuitry.

Q: Can I use a lower current rated device like the STW9NK90Z as a substitute?

A: The STW9NK90Z (8A rating) can be used only if your actual operating current is below 8A. Using a device rated below your application's peak current will result in excessive junction temperature and potential device failure. Current derating analysis is required before selecting lower-rated alternatives.

Q: What compliance certifications should I verify for my application?

A: All listed substitute parts are ROHS3 compliant and REACH unaffected, matching the compliance profile of the IXFH13N90. Verify that these certifications meet your end-product requirements. Additional certifications (automotive, industrial, medical) may be required depending on your application and should be confirmed with the manufacturer.

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