IXFH13N80Q N-Channel 800V 13A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH13N80Q is an N-Channel 800V 13A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-247AD through-hole package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity. The part operates across a temperature range of -55°C to 150°C and dissipates up to 250W at the case temperature. Substitute parts must maintain electrical compatibility within the 800V drain-source voltage class while accommodating variations in continuous drain current, on-resistance, and gate charge characteristics.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	13	A (Tc)
On-Resistance (Rds On Max) @ 6.5A, 10V	700	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 4mA	4.5	V
Gate Charge (Qg Max) @ 10V	90	nC
Input Capacitance (Ciss Max) @ 25V	3250	pF
Power Dissipation (Max)	250	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH13N80Q is determined by the following critical parameters:

Primary Compatibility Criteria:

Drain to Source Voltage (Vdss): 800V minimum (higher voltage ratings are acceptable)
Continuous Drain Current (Id): 13A or greater at 25°C case temperature
Package Type: TO-247-3 or TO-247AD through-hole configuration
Gate Drive Voltage: 10V nominal

Secondary Compatibility Factors:

On-Resistance (Rds On): Lower or equal values improve performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values reduce gate drive requirements
Power Dissipation: Equal or greater ratings accommodate thermal requirements

Substitute parts are grouped into two categories:

Category A - Direct Voltage Class Substitutes (800V): Parts with 800V Vdss rating that maintain or exceed the 13A continuous drain current specification. These include STW10NK80Z, STW12NK80Z, and STW11NM80.

Category B - Higher Voltage Class Substitutes (1000V+): Parts with elevated Vdss ratings that provide additional voltage margin. STW13NK100Z operates at 1000V and maintains identical current and on-resistance characteristics.

Category C - Enhanced Current Substitutes: APT8052BLLG provides 15A continuous drain current at 800V with improved on-resistance characteristics.

Parameter Comparison

Parameter	IXFH13N80Q	STW13NK100Z	APT8052BLLG	STW12NK80Z	STW11NM80	STW10NK80Z
Manufacturer	IXYS	STMicroelectronics	Microchip Technology	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	800	1000	800	800	800	800
Id @ 25°C (A)	13	13	15	10.5	11	9
Rds On Max @ 10V (mOhm)	700	700	520	750	400	900
Vgs(th) Max (V)	4.5	4.5	5	4.5	5	4.5
Qg Max @ 10V (nC)	90	266	75	87	43.6	72
Ciss Max @ 25V (pF)	3250	6000	2035	2620	1630	2180
Power Dissipation Max (W)	250	350	Not Specified	190	150	160
Operating Temperature (°C)	-55 to 150	-55 to 150	Not Specified	-55 to 150	-65 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	Not Specified	ROHS3 Compliant	Not Specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

STW13NK100Z (STMicroelectronics) is the primary recommended substitute. This part maintains identical continuous drain current (13A) and on-resistance (700 mOhm) specifications while providing elevated voltage rating (1000V vs. 800V). The higher voltage margin accommodates transient overvoltage conditions. STW13NK100Z is active in production status with ROHS3 compliance and carries 5059 units in current inventory. The increased gate charge (266 nC vs. 90 nC) and input capacitance (6000 pF vs. 3250 pF) require gate driver circuit evaluation for switching frequency compatibility.

APT8052BLLG (Microchip Technology) provides enhanced current capability (15A vs. 13A) with improved on-resistance (520 mOhm vs. 700 mOhm) at the same 800V voltage rating. This part is suitable for applications requiring lower conduction losses. Active production status and 750 units in inventory support design continuity. Gate charge reduction (75 nC vs. 90 nC) and input capacitance reduction (2035 pF vs. 3250 pF) improve gate drive efficiency.

STW11NM80 (STMicroelectronics) offers the lowest on-resistance (400 mOhm) among 800V substitutes, reducing conduction losses in high-current applications. Continuous drain current of 11A is slightly below the original specification but remains within acceptable range for many applications. Extended operating temperature range (-65°C to 150°C) provides additional thermal margin. Gate charge of 43.6 nC is the lowest among all substitutes, minimizing switching losses.

STW12NK80Z (STMicroelectronics) provides intermediate current rating (10.5A) with on-resistance of 750 mOhm. This part bridges the performance gap between STW10NK80Z and STW11NM80. Power dissipation rating of 190W accommodates moderate thermal loads.

STW10NK80Z (STMicroelectronics) is the lowest-current substitute at 9A continuous drain current. This part is suitable only for applications where current requirements do not exceed 9A. Higher on-resistance (900 mOhm) increases conduction losses. Largest inventory availability (10091 units) supports high-volume production.

All recommended substitutes are manufactured by established semiconductor suppliers with active production status, ROHS3 compliance, and TO-247-3 package compatibility. Selection depends on specific application requirements for current capacity, conduction losses, switching frequency, and thermal management.

Frequently Asked Questions (FAQ)

Q: Can STW13NK100Z directly replace IXFH13N80Q in existing circuit designs?

A: STW13NK100Z is electrically compatible for direct replacement in applications operating at 800V or below. The identical 13A current rating and 700 mOhm on-resistance ensure equivalent conduction performance. However, the increased gate charge (266 nC vs. 90 nC) and input capacitance (6000 pF vs. 3250 pF) require gate driver circuit verification to confirm adequate drive capability at the intended switching frequency. PCB layout and thermal management remain unchanged due to identical TO-247-3 package configuration.

Q: What is the minimum continuous drain current requirement for substitute selection?

A: The IXFH13N80Q operates at 13A continuous drain current. Substitute parts must have a rated continuous drain current equal to or greater than 13A to ensure safe operation under full-load conditions. STW10NK80Z (9A) and STW11NM80 (11A) fall below this specification and are suitable only for applications with reduced current requirements. APT8052BLLG (15A) and STW13NK100Z (13A) meet or exceed the original specification.

Q: Are all substitute parts available in the same TO-247-3 package?

A: Yes, all recommended substitute parts are housed in TO-247-3 through-hole packages with identical pin configurations and mechanical dimensions. This ensures direct PCB compatibility without layout modifications. Mounting hardware, heatsink interfaces, and thermal management solutions remain interchangeable across all substitutes.

Q: How does on-resistance variation affect circuit performance?

A: On-resistance directly determines conduction losses and heat dissipation. Lower on-resistance values reduce power loss and operating temperature. STW11NM80 (400 mOhm) dissipates approximately 43% less power than IXFH13N80Q (700 mOhm) at 13A continuous current. APT8052BLLG (520 mOhm) reduces losses by approximately 26%. Higher on-resistance values such as STW10NK80Z (900 mOhm) increase losses by approximately 29%. Thermal management design must accommodate the selected part's power dissipation characteristics.

Q: What is the significance of gate charge differences among substitutes?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and gate driver power consumption. STW11NM80 (43.6 nC) requires approximately 52% less gate charge than IXFH13N80Q (90 nC), reducing switching losses and improving efficiency at high switching frequencies. STW13NK100Z (266 nC) requires approximately 196% more gate charge, potentially requiring gate driver circuit upgrades for frequencies above 50 kHz.

Q: Can higher voltage-rated parts such as STW13NK100Z be used in 800V applications?

A: Yes, higher voltage-rated parts are suitable for lower voltage applications. STW13NK100Z (1000V rating) operates safely in 800V circuits with additional voltage margin for transient overvoltage protection. This approach is common in industrial and power conversion applications where voltage spikes exceed nominal operating levels. No circuit modifications are required for voltage compatibility.

Q: What compliance certifications are relevant for substitute part selection?

A: All active substitute parts carry ROHS3 compliance certification, meeting European Union Restriction of Hazardous Substances requirements. REACH compliance status is identical across all parts (REACH Unaffected). These certifications ensure regulatory compliance for new product designs and manufacturing operations. The obsolete IXFH13N80Q lacks current compliance documentation, making active substitutes necessary for new designs.

Q: How does input capacitance affect gate driver circuit design?

A: Input capacitance (Ciss) determines the charge storage at the gate-source interface and influences gate voltage rise time. Higher input capacitance requires greater gate driver current to achieve specified switching speeds. STW13NK100Z (6000 pF) requires approximately 85% more gate charge than IXFH13N80Q (3250 pF), potentially necessitating gate driver circuit upgrades. STW11NM80 (1630 pF) reduces input capacitance by approximately 50%, improving switching performance and reducing gate driver stress.

Q: What inventory considerations apply to substitute part selection?

A: Current inventory levels support production continuity for all recommended substitutes. STW10NK80Z maintains the highest inventory (10091 units), followed by STW13NK100Z (5059 units), STW12NK80Z (1530 units), STW11NM80 (1379 units), and APT8052BLLG (750 units). Long-term availability is assured through active production status at all manufacturers. Procurement planning should account for lead times and minimum order quantities specific to each supplier.

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