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IXFH13N50 N-Channel 500V 13A MOSFET Equivalent & Substitute Parts
Part Overview
The IXFH13N50 is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage and 13A continuous drain current at 25°C. This device features the HiPerFET™ series technology and is housed in a TO-247AD through-hole package. The part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging options.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 500 | V |
| Continuous Drain Current (Id) @ 25°C | 13 | A |
| On-State Resistance (Rds On) @ 10V | 400 | mOhm |
| Gate Threshold Voltage (Vgs(th)) | 4 | V @ 2.5mA |
| Gate Charge (Qg) @ 10V | 120 | nC |
| Power Dissipation (Max) | 180 | W |
| Operating Temperature Range | -55 to 150 | °C |
| Mounting Type | Through Hole | — |
| Package | TO-247-3 | — |
Substitute Part Grouping Explanation
Substitution of the IXFH13N50 is determined by strict adherence to the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
- Continuous Drain Current (Id): Must equal or exceed 13A at 25°C
- On-State Resistance (Rds On): Lower values indicate improved performance; values at or below 400mOhm @ 10V are acceptable
- Gate Threshold Voltage (Vgs(th)): Must be compatible with 4V nominal specification
- Operating Temperature Range: Must span -55°C to 150°C minimum
- Mounting Type: Through-hole configuration required
- Package: TO-247-3 family compatibility
Substitution Categories:
Direct Equivalents maintain identical or superior electrical specifications with minimal parameter variance. These parts are pin-compatible and functionally interchangeable without circuit modification.
Compatible Substitutes meet or exceed all critical electrical parameters (Vdss, Id, Rds On, temperature range) but may exhibit variations in secondary parameters such as gate charge or input capacitance. These parts are suitable for applications where the primary performance envelope is maintained.
Performance-Enhanced Alternatives exceed the original specifications in current rating, power dissipation, or on-state resistance while maintaining voltage and temperature compatibility. These parts provide design margin and improved thermal performance.
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On @ 10V (mOhm) | Qg @ 10V (nC) | Power Diss. (W) | Package | Status |
|---|---|---|---|---|---|---|---|---|
| IXFH13N50 | IXYS | 500 | 13 | 400 | 120 | 180 | TO-247AD | Obsolete |
| IPW50R250CPFKSA1 | Infineon | 500 | 13 | 250 | 36 | 114 | TO-247-3 | Active |
| IRFP450PBF | Infineon | 500 | 14 | 400 | 150 | 190 | TO-247-3 | Obsolete |
| IRFP354 | Vishay Siliconix | 450 | 14 | 350 | 160 | 190 | TO-247-3 | Active |
| IRFP350LCPBF | Vishay Siliconix | 400 | 16 | 300 | 76 | 190 | TO-247-3 | Active |
| IRFP448PBF | Vishay Siliconix | 500 | 11 | 600 | 84 | 180 | TO-247-3 | Active |
| IRFP450APBF | Vishay Siliconix | 500 | 14 | 400 | 64 | 190 | TO-247-3 | Active |
| IRFP17N50LPBF | Vishay Siliconix | 500 | 16 | 320 | 130 | 220 | TO-247-3 | Active |
| SIHG14N50D-GE3 | Vishay Siliconix | 500 | 14 | 400 | 58 | 208 | TO-247-3 | Active |
| SIHG14N50D-E3 | Vishay Siliconix | 500 | 14 | 400 | 58 | 208 | TO-247-3 | Active |
| IPW50R140CPFKSA1 | Infineon | 550 | 23 | 140 | 64 | 192 | TO-247-3 | Last Time Buy |
Engineering Selection Recommendations
Tier 1: Direct Electrical Equivalents (Recommended for Drop-In Replacement)
IPW50R250CPFKSA1 (Infineon, Active) and SIHG14N50D-GE3 (Vishay Siliconix, Active) are the primary recommended substitutes. Both maintain the 500V/13A electrical envelope with superior on-state resistance characteristics. IPW50R250CPFKSA1 offers the lowest Rds On (250mOhm) and gate charge (36nC), resulting in reduced switching losses and improved thermal performance. SIHG14N50D-GE3 provides 14A current rating with identical voltage specification and active product status with RoHS3 compliance.
Tier 2: Compatible Substitutes with Acceptable Parameter Variance
IRFP450APBF (Vishay Siliconix, Active) and IRFP450PBF (Infineon, Obsolete) maintain 500V/14A specifications with 400mOhm Rds On. IRFP450APBF is preferred due to active product status and RoHS3 compliance. IRFP17N50LPBF (Vishay Siliconix, Active) provides enhanced current rating (16A) and power dissipation (220W) at 500V with improved thermal margin.
Tier 3: Voltage-Reduced Alternatives
IRFP354 (Vishay Siliconix, Active) operates at 450V with 14A rating and 350mOhm Rds On. This part is suitable only for applications where the 500V specification can be relaxed to 450V without system impact. IRFP350LCPBF (Vishay Siliconix, Active) operates at 400V with 16A rating and is applicable only to 400V-rated systems.
Tier 4: Performance-Enhanced Alternative
IPW50R140CPFKSA1 (Infineon, Last Time Buy) provides 550V/23A with significantly reduced Rds On (140mOhm). This part is suitable for applications requiring enhanced current capacity and thermal performance but carries Last Time Buy status, limiting long-term availability.
Compliance Considerations:
Active product status is preferred for new designs and ongoing production. IRFP450PBF and IXFH13N50 are both obsolete; however, IRFP450PBF maintains higher inventory availability (17,100 units). RoHS3 compliance is confirmed for IPW50R250CPFKSA1, IRFP450APBF, IRFP17N50LPBF, SIHG14N50D-GE3, and SIHG14N50D-E3. All parts maintain REACH Unaffected or REACH Compliant status where specified.
Frequently Asked Questions (FAQ)
Q: Can IRFP448PBF be used as a substitute for IXFH13N50?
A: IRFP448PBF is not recommended as a primary substitute. While it maintains 500V voltage rating and 180W power dissipation, its 11A continuous drain current falls below the 13A requirement. Additionally, its 600mOhm on-state resistance is significantly higher than the 400mOhm specification, resulting in increased conduction losses and thermal stress.
Q: What is the difference between SIHG14N50D-GE3 and SIHG14N50D-E3?
A: Both parts are electrically identical, with matching 500V/14A specifications, 400mOhm Rds On, and 208W power dissipation. The suffix designates manufacturing revision. SIHG14N50D-GE3 is the current production variant and is preferred for new designs. Both are active products with RoHS3 compliance.
Q: Is IPW50R250CPFKSA1 a direct replacement for IXFH13N50?
A: IPW50R250CPFKSA1 is electrically compatible and functionally superior. It maintains identical 500V/13A specifications while offering improved performance: 250mOhm Rds On (versus 400mOhm), 36nC gate charge (versus 120nC), and lower power dissipation (114W versus 180W). The TO-247-3 package is mechanically compatible with TO-247AD. This part is active and RoHS3 compliant, making it the preferred long-term substitute.
Q: Can I use IRFP354 (450V) in a 500V application?
A: No. IRFP354 is rated for 450V maximum drain-to-source voltage. Using it in a 500V application exceeds the device rating and creates risk of gate-oxide breakdown and catastrophic failure. Voltage rating must not be compromised.
Q: What is the advantage of IPW50R140CPFKSA1 over IPW50R250CPFKSA1?
A: IPW50R140CPFKSA1 provides higher current capacity (23A versus 13A) and significantly lower on-state resistance (140mOhm versus 250mOhm), resulting in reduced conduction losses and improved thermal performance. However, it carries Last Time Buy status, limiting future availability. IPW50R250CPFKSA1 is preferred for new designs requiring long-term supply assurance.
Q: Are all substitute parts pin-compatible with IXFH13N50?
A: All recommended substitutes use TO-247-3 package family with identical pin configuration (Gate, Drain, Source). The original IXFH13N50 uses TO-247AD, which is mechanically and electrically compatible with TO-247AC and TO-247-3 variants. No PCB modification is required for package substitution.
Q: What is the significance of gate charge (Qg) differences between substitutes?
A: Gate charge affects switching speed and driver circuit requirements. Lower gate charge (36nC for IPW50R250CPFKSA1 versus 120nC for IXFH13N50) enables faster switching transitions and reduces driver power dissipation. Higher gate charge (160nC for IRFP354) requires longer switching times. For most applications, lower gate charge provides performance advantage, but driver circuit compatibility must be verified.
Q: Why is IRFP450PBF listed as obsolete despite high inventory?
A: Product status reflects manufacturer discontinuation, not availability. IRFP450PBF is obsolete but remains in stock (17,100 units). Active products such as IRFP450APBF are preferred for new designs to ensure long-term supply continuity beyond current inventory depletion.
Q: Can I parallel multiple lower-current devices to replace IXFH13N50?
A: Paralleling MOSFETs is not addressed by this substitution guide. Parallel operation requires careful gate drive matching, thermal management, and PCB layout considerations beyond the scope of direct part substitution. Consult device-specific application notes for parallel operation guidance.
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