IXFH13N100 N-Channel 1000V 12.5A MOSFET Equivalent & Substitute Parts

Part Overview

The IXFH13N100 is an N-Channel 1000V 12.5A MOSFET manufactured by IXYS in the HiPerFET™ series, housed in a TO-247AD through-hole package. This device is rated for 300W power dissipation and operates across a temperature range of -55°C to 150°C. The part is currently classified as obsolete, making identification of functionally equivalent alternatives essential for design continuity and procurement planning. Substitute parts must maintain compatibility across drain-source voltage, continuous drain current, gate charge characteristics, and thermal performance parameters while accommodating the through-hole TO-247 package family.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	12.5	A
On-State Resistance (Rds On) @ 500mA, 10V	900	mOhm
Gate Threshold Voltage (Vgs(th)) @ 4mA	4.5	V
Gate Charge (Qg) @ 10V	155	nC
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitution eligibility for the IXFH13N100 is determined by the following critical parameters:

Primary Compatibility Criteria:

Drain-Source Voltage (Vdss): Must equal or exceed 1000V
Continuous Drain Current (Id): Must equal or exceed 12.5A at 25°C
Package Type: TO-247 family (TO-247AD, TO-247-3, or TO-247 [B])
Mounting Type: Through Hole
Operating Temperature Range: Must encompass -55°C to 150°C

Secondary Performance Criteria:

On-State Resistance (Rds On): Lower values indicate improved efficiency
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide thermal margin
Gate Threshold Voltage (Vgs(th)): Must be compatible with drive circuitry

Substitute parts are grouped into two categories: MFR Recommended (direct manufacturer alternatives from IXYS) and Similar (functionally equivalent parts from alternative manufacturers meeting all primary criteria).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Package	Status
IXFH13N100	IXYS	1000	12.5	900	155	300	TO-247AD	Obsolete
IXFH12N100P	IXYS	1000	12	1050	80	463	TO-247AD	Active
IXFH15N100P	IXYS	1000	15	760	97	543	TO-247AD	Active
APT14M100B	Microchip Technology	1000	14	900	120	500	TO-247 [B]	Active
STW13NK100Z	STMicroelectronics	1000	13	700	266	350	TO-247-3	Active
STW12NK90Z	STMicroelectronics	900	11	880	152	230	TO-247-3	Active
STW11NK90Z	STMicroelectronics	900	9.2	980	115	200	TO-247-3	Active
STW6N95K5	STMicroelectronics	950	9	1250	13	90	TO-247-3	Active

Engineering Selection Recommendations

MFR Recommended Substitutes (IXYS HiPerFET™ Series):

The IXFH12N100P and IXFH15N100P are active production alternatives from IXYS within the same HiPerFET™ series. Both maintain 1000V Vdss rating and TO-247AD packaging. The IXFH12N100P provides 12A continuous current with reduced gate charge (80 nC), while the IXFH15N100P offers 15A continuous current with improved on-state resistance (760 mOhm). Both are ROHS3 compliant and carry unlimited moisture sensitivity rating (MSL 1). Selection between these depends on application current requirements and thermal management capacity.

Similar Substitutes (Alternative Manufacturers):

The APT14M100B (Microchip Technology, POWER MOS 8™ series) provides 14A at 1000V with 900 mOhm on-state resistance and 500W power dissipation. Package variant is TO-247 [B], maintaining mechanical and electrical compatibility. ROHS3 compliant with MSL 1 rating.

The STW13NK100Z (STMicroelectronics, SuperMESH™ series) matches 1000V Vdss and 13A continuous current with superior on-state resistance (700 mOhm) and 350W power dissipation. TO-247-3 package. ROHS3 compliant with MSL 1 rating.

Reduced Voltage Alternatives:

The STW12NK90Z and STW11NK90Z operate at 900V Vdss, suitable only for applications where maximum voltage stress does not exceed 900V. These parts offer lower gate charge and improved switching characteristics but reduced voltage margin. The STW6N95K5 operates at 950V with significantly reduced current rating (9A) and power dissipation (90W), limiting applicability to lower-power designs.

All substitute parts maintain through-hole mounting, -55°C to 150°C operating temperature range, and equivalent regulatory compliance (ROHS3, REACH Unaffected, EAR99).

Frequently Asked Questions (FAQ)

Q: Can the IXFH12N100P directly replace the IXFH13N100?

A: The IXFH12N100P is a direct IXYS manufacturer substitute with identical 1000V Vdss rating and TO-247AD packaging. The 12A continuous current rating is 0.5A lower than the original 12.5A specification. Substitution is valid for applications where the design current does not exceed 12A. The IXFH12N100P offers superior gate charge characteristics (80 nC versus 155 nC) and higher power dissipation rating (463W versus 300W).

Q: What is the difference between TO-247AD and TO-247-3 packages?

A: Both are through-hole TO-247 family packages with identical pin configuration and mechanical footprint. TO-247AD is the IXYS variant designation, while TO-247-3 is the standard industry designation used by STMicroelectronics and other manufacturers. Mechanical and electrical compatibility is maintained across these designations.

Q: Why do some substitutes have lower Vdss ratings (900V or 950V)?

A: The STW12NK90Z, STW11NK90Z, and STW6N95K5 operate at reduced voltage ratings. These parts are suitable only for applications where the maximum drain-source voltage does not exceed their respective Vdss ratings. Using a lower-rated device in a 1000V application will result in device failure. These alternatives are listed for reference in reduced-voltage system designs only.

Q: How does gate charge (Qg) affect device selection?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (such as the IXFH12N100P at 80 nC) reduces switching losses and allows higher switching frequencies. Higher gate charge (such as the STW13NK100Z at 266 nC) increases switching losses but may provide other performance benefits such as improved on-state resistance. Selection depends on the specific application's switching frequency and thermal budget.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed carry RoHS3 compliance certification and REACH Unaffected status, matching the regulatory compliance of the original IXFH13N100. All parts maintain MSL 1 (Unlimited) moisture sensitivity rating.

Q: What is the significance of the "Active" product status for substitutes?

A: Active status indicates the part is in current production and available for procurement. The original IXFH13N100 is classified as obsolete, meaning it is no longer manufactured. Active substitutes ensure long-term design support and supply chain continuity for new designs or redesigns of existing products.

Q: Can the IXFH15N100P be used in place of the IXFH13N100?

A: Yes. The IXFH15N100P exceeds all primary compatibility criteria: 1000V Vdss, 15A continuous current (exceeding the 12.5A requirement), TO-247AD packaging, and -55°C to 150°C operating range. The higher current rating and improved on-state resistance (760 mOhm) provide additional design margin. This is a direct upgrade substitute.

Q: How do on-state resistance values affect thermal performance?

A: On-state resistance (Rds On) directly determines conduction losses in the MOSFET. Lower Rds On values reduce power dissipation during conduction, improving thermal performance. For example, the STW13NK100Z at 700 mOhm dissipates less heat than the original IXFH13N100 at 900 mOhm under identical current conditions. Selection should consider both the device's power dissipation rating and the application's thermal management capability.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message